Abstract: A transducing head according to the present invention includes a pair of electrodes, a pair of biasing elements and a magnetoresistive sensor. The magnetoresistive sensor is positioned between the pair of electrodes. The magnetoresistive sensor includes a pair of flux guides and a free layer positioned substantially co-planar with and between the pair of flux guides. The pair of electrodes are for providing a sense current to the free layer in a direction substantially perpendicular to a plane of the free layer. The pair of biasing elements are positioned on opposing sides of the magnetoresistive sensor for providing longitudinal bias to the free layer.

Abstract: A magnetoresistive head apparatus includes first and second readers. The first reader is a magnetoresistive reader. The second reader provides electrostatic discharge protection for the first magnetoresistive reader. The second reader can be a second magnetoresistive reader having substantially the same film structure as the first reader. The second reader can also include a phase change thin film, which has high and low resistance states that are changeable using a laser.

Abstract: A data transducer is used for writing data to a disc and has an air bearing surface. The data transducer also includes a bottom pole and a top pole separated from the bottom pole at the air bearing surface by a write gap. A core is formed between the bottom pole and the top pole and a conductive coil is positioned within the core. The data transducer further includes means for dissipating thennal energy away from the coil.

Abstract: A transducing head according to the present invention includes a pair of electrodes, a pair of biasing elements and a magnetoresistive sensor. The magnetoresistive sensor is positioned between the pair of electrodes. The magnetoresistive sensor includes a pair of flux guides and a free layer positioned substantially co-planar with and between the pair of flux guides. The pair of electrodes are for providing a sense current to the free layer in a direction substantially perpendicular to a plane of the free layer. The pair of biasing elements are positioned on opposing sides of the magnetoresistive sensor for providing longitudinal bias to the free layer.

Abstract: The present invention is a magnetoresistive (MR) sensor (100) that combines the advantages of abutted junction structure and regular overlaid structure. The abutted junction design is used with the soft adjacent layer (SAL) (108) and the overlaid structure is used with the MR element (120). The method of making the MR sensor (100) comprises depositing SAL (108) on top of the gap layer (106) and depositing spacer material (110) on top of the SAL (108). A mask (130) is placed over the central region of the spacer material (110) and SAL (108). The spacer material (110) and SAL (108) are removed in the areas not covered by the mask (130). An underlayer material (112) is deposited in the areas where the SAL (108) and spacer material (110) were removed. A hard-biasing material (114) is deposited on top of the underlayer (112).

Abstract: The invention includes methods of manufacturing improved spin valve sensors and the resulting sensors. The method includes the step of depositing a spacer layer in an environment containing oxygen. Preferably, the spacer layer is deposited in an environment containing argon and from about 0.5 to 25,000 ppm oxygen. Spin valve sensors of the invention have a spacer layer containing a non-magnetic electrically conductive material and oxygen. Spin valve sensors of the invention can be dual spin valves, bottom pinned spin valves or top pinned spin valves.

Abstract: The present invention is a magnetoresistive (MR) sensor (100) that combines the advantages of abutted junction structure and regular overlaid structure. The abutted junction design is used with the soft adjacent layer (SAL) (108) and the overlaid structure is used with the MR element (120). The method of making the MR sensor (100) comprises depositing SAL (108) on top of the gap layer (106) and depositing spacer material (110) on top of the SAL (108). A mask (130) is placed over the central region of the spacer material (110) and SAL (108). The spacer material (110) and SAL (108) are removed in the areas not covered by the mask (130). An underlayer material (112) is deposited in the areas where the SAL (108) and spacer material (110) were removed. A hard-biasing material (114) is deposited on top of the underlayer (112).

Abstract: The invention includes spin valve sensors. The spin valve sensors of the invention can be dual spin valves, bottom pinned spin valves, or top pinned spin valves. Spin valve sensor in accordance with the invention include a cap layer of tantalum nitride and a free layer. Cap layers of the invention include both monolayers and bilayers. Monolayer cap layers are tantalum nitride, and bilayer cap layers are a first layer of tantalum nitride with a layer of copper, ruthenium, gold, or silver thereon.

Abstract: A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.

Abstract: The present invention is a magnetoresistive (MR) sensor that combines a hard-biasing material with an underlayer of cubic-titanium-tungsten to improve the stability of the MR sensor. The permanency of the hard-biasing material affects both the transverse and longitudinal biasing of the MR sensor, which in turn affects the stability of the MR sensor. The stability of the hard-biasing material is improved by combining it with an underlayer of cubic-titanium-tungsten. The underlayer enhances the hard-biasing material by improving the longitudinal magnetic anisotropy, the coercivity, and the in-plane squareness of the hard-biasing material. The combination of hard-biasing material and cubic-titanium-tungsten underlayer can be used in a variety of MR sensor embodiments, specifically an abutted junction or an overlaid structure. The method of making the abutted junction or overlaid structures is also improved by using cubic-titanium-tungsten as the underlayer of the hard-biasing material.

Abstract: An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions.

Abstract: An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions.

Abstract: A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.