Abstract: The present invention relates to the field of processing a video stream, and more particular to the field of post processing of a video stream using shaders. The processing of the video stream is divided between a video stream processing device and a client device.

Abstract: A method may include receiving a video stream from a camera and displaying the video stream on a display. The method may further include obtaining, via an eye tracking sensor, information identifying a gaze area for a user watching the display; generating a gradient from the gaze area to edges of the display; and instructing the camera to decrease a bit rate of the video stream outside the gaze area based on the generated gradient.

Abstract: A method for encoding an image comprising a plurality of pixels into an encoded image frame of a video stream, the method comprising: receiving pixel divided image data of the image, wherein the pixel divided image data represents the pixels of the image; grouping the pixels of the image into encoding units, wherein each encoding unit comprises a plurality of neighboring pixels; receiving data defining a privacy mask and graphical characteristics of the privacy mask; identifying all encoding units having one or more pixels located within the privacy mask; extending the privacy mask to be aligned with the identified encoding units, thereby forming a redefined privacy mask covering the identified encoding units; generating a privacy masked image by applying the redefined privacy mask and the received graphical characteristics to the image; and encoding the privacy masked image into the encoded image frame of the video stream.

Abstract: A method for identifying events in a scene captured by a motion video camera comprises two identification processes, a temporary identification process and a long-term identification process. The temporary process includes: analyzing pixel data from captured image frames and identifying events; registering camera processing data relating to each image frame subjected to the identification of events; and adjusting weights belonging to an event identifying operation, wherein the weights are adjusted for achieving high correlation between the result from the event identifying operation and the result from the identification based on analysis of pixels from captured image frames of the captured scene. The long-term identification process includes: identifying events in the captured scene by inputting registered camera processing data to the event identifying operation.

Abstract: A method, system, and computer program product of encoding a digital image comprising a privacy mask. Information representative of pixels in the digital image is received. The pixels are grouped into encoding units. Information representative of a privacy mask area in which a privacy mask is to be applied on the image is also received. All encoding units that at least partially are located within the privacy mask area are identified, and the privacy mask area is extended to be aligned with the identified encoding units. For each encoding unit, a respective quantization parameter to be used for encoding the image is determined. The privacy mask is applied in the extended privacy mask area of the image, and the image with the applied privacy mask is encoded using the determined quantization parameters. The digital image encoding system may be included in a camera.

Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.

Abstract: The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.

Abstract: The embodiments disclose a method and communication node for configuring a multicast group in a Multiple Protocol Label Switching (MPLS) network. The method comprises: obtaining a multicast group configuration request to configure the multicast group of at least one downstream node in the MPLS network, the at least one downstream node may comprise a transit node, a leaf node or the combination thereof; generating a multicast group configuration packet based on the multicast group configuration request; and transmitting the multicast group configuration packet from the root node to the at least one transit node and/or leaf node via a multicast tree in the MPLS network.

Abstract: A mobile communications terminal (100, 200, 400, 600, 900) comprising a memory (240), a display (120) arranged to display a representation of a first user interface state, and a controller (210). The controller (210) is configured to detect a user interface changing event, change from said first user interface state to a second user interface state and cause said display (120) to display a representation of said second user interface state. The controller is further configured to receive an input and interpret said input based on a time period to said event and process said input according to said interpretation.

Abstract: There is provided a device (100) having hardware (102) and a first, upgradable, firmware (106) for controlling the hardware. The device further has a hypervisor (104) which links the first firmware to the hardware so as to control access of the first firmware to the hardware. In preparation for an upgrade of the first firmware, the hypervisor is configured to deny access of the first firmware to the hardware, access a second firmware, and control the hardware by the second firmware.

Abstract: Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.

Abstract: The present invention relates generally to video communication systems, and more specifically to a method and device for determining a degree of animation of a graphical overlay for a video stream based on a degree of movement in the video stream.

Abstract: A chemical mechanical polishing slurry for polishing a stainless steel substrate is provided, which comprises a content 10˜50 wt % of abrasive particles, a content 0.001˜2.0 wt % of a coolant, a content 0.001˜1.0 wt % of an oxidant, a content 10˜5000 ppm of a lubricity improver, and a content 10˜5000 ppm of a foam inhibitor. A particle size of the abrasive particles is in a range of 20˜500 nm. The alkaline polishing slurry according to the present invention is capable of increasing the polishing performance, surface quality, and surface passivation effect after the chemical-mechanical polishing process.

Abstract: In a web browser (100) access is controlled with respect to at least one user data providing device (102), the web browser comprising a browser engine (106), a browser application (104) and a device access proxy, DAP (108). Access is acquired, in the DAP, to at least one user data providing device and a request is received from a web application (110) for user data from a first user data providing device. In response to the request, default data (112) is transmitted from the DAP to the web application. A user data access confirmation signal is obtained, and in response to the user data access confirmation signal, the transmission of the default data is discontinued and the requested user data is transmitted from the DAP to the web application.

Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.

Abstract: A network node comprising a memory and a controller, wherein said controller is configured to: detect that a handover for a mobile communications terminal from a first base station to a second base station and in response thereto determine if an application module associated with the mobile communications terminal is to be migrated, and if so, cause a migration of said application module to be performed.

Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.

Abstract: A chemical mechanical polishing slurry for polishing a stainless steel substrate is provided, which comprises a content 10˜50 wt % of abrasive particles, a content 0.001˜2.0 wt % of a coolant, a content 0.001˜1.0 wt % of an oxidant, a content 10˜5000 ppm of a lubricity improver, and a content 10˜5000 ppm of a foam inhibitor. A particle size of the abrasive particles is in a range of 20˜500 nm. The alkaline polishing slurry according to the present invention is capable of increasing the polishing performance, surface quality, and surface passivation effect after the chemical-mechanical polishing process.

Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.

Abstract: The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.