Abstract: A method of processing a substrate includes a first step, a second step and a third step. The substrate includes an etching layer and a mask. The mask is formed on a first surface of the etching layer. The first step forms a first film on a second surface of the mask. The second step forms a second film having a material of the etching layer on the first film by etching the first surface of the etching layer. The third step removes the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas includes oxygen.

Abstract: A method of making a semiconductor device that includes forming a vertical access transistor including forming bit lines in a first direction on a substrate, forming a polysilicon pillar as a sacrificial pillar over each bit line of the bit lines, forming a gate oxide on side surfaces of the polysilicon pillar, forming a word line, in a second direction, on the polysilicon pillar with the gate oxide interposed between the word line and the polysilicon pillar, the second direction being not substantially parallel to the first direction, after forming the word line, removing the polysilicon pillar so as to leave a vertical void in place of the polysilicon pillar, filling the vertical void with an oxide semiconductor that serves as a channel for the vertical access transistor; and forming a cell capacitor over the channel of the vertical access transistor.

Abstract: A method of processing a substrate includes a first step, a second step and a third step. The substrate includes an etching layer and a mask. The mask is formed on a first surface of the etching layer. The first step forms a first film on a second surface of the mask. The second step forms a second film having a material of the etching layer on the first film by etching the first surface of the etching layer. The third step removes the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas includes oxygen.

Abstract: There is provided a method of processing a workpiece for manufacturing a magnetoresistive effect element, the workpiece including a first multilayer film and a second multilayer film, the first multilayer film including a first magnetic layer, a second magnetic layer and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and the second multilayer film constituting a pinning layer in the magnetoresistive effect element. The method includes etching the first multilayer film and the second multilayer film, and heating the workpiece after the etching or during the etching. The heating includes heating the workpiece while adjusting an ambient condition of the workpiece.

Abstract: The first film forming device is configured to form a film using plasma in a consistent vacuum state. In the forming of the first substrate product, the first substrate product is formed in a consistent vacuum state. The first substrate product has the support base, a first lamination region, and a metal region. The first lamination region is provided on the support base. The metal region is provided on the first lamination region, and has a first metal layer and a second metal layer. The first metal layer is provided on the first lamination region, and the second metal layer is provided on the first metal layer. A material of the first metal layer has TiN or Ta, and a material of the second metal layer has TaN or Ru.

Abstract: A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

Abstract: The first film forming device is configured to form a film using plasma in a consistent vacuum state. In the forming of the first substrate product, the first substrate product is formed in a consistent vacuum state. The first substrate product has the support base, a first lamination region, and a metal region. The first lamination region is provided on the support base. The metal region is provided on the first lamination region, and has a first metal layer and a second metal layer. The first metal layer is provided on the first lamination region, and the second metal layer is provided on the first metal layer. A material of the first metal layer has TiN or Ta, and a material of the second metal layer has TaN or Ru.

Abstract: In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.

Abstract: In a method of etching according to one embodiment, a multilayer film having a magnetic tunnel junction layer is etched. In the method of etching, a plasma processing apparatus is used. A chamber body of the plasma processing apparatus provides an internal space. In the method of etching, a workpiece is accommodated in the internal space. Next, the multilayer film is etched by plasma of a first gas generated in the internal space. The first gas includes carbon and a rare gas and does not include hydrogen. Next, the multilayer film is further etched by plasma of a second gas generated in the internal space. The second gas includes oxygen and a rare gas and does not include carbon and hydrogen.

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

Abstract: There is provided a method of processing a workpiece for manufacturing a magnetoresistive effect element, the workpiece including a first multilayer film and a second multilayer film, the first multilayer film including a first magnetic layer, a second magnetic layer and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and the second multilayer film constituting a pinning layer in the magnetoresistive effect element. The method includes etching the first multilayer film and the second multilayer film, and heating the workpiece after the etching or during the etching. The heating includes heating the workpiece while adjusting an ambient condition of the workpiece.

Abstract: There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

Abstract: In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.

Abstract: There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.

Abstract: In one embodiment, a method for etching a workpiece including a lower electrode and a multi-layer film disposed on the lower electrode, the multi-layer film including a first magnetic layer, a second magnetic layer, and an insulating layer interposed between the first magnetic layer and the second magnetic layer, through a mask, is provided. The method includes exposing the workpiece to plasma of first processing gas which contains first rare gas and second rare gas having an atomic number larger than that of the first rare gas, and does not contain hydrogen gas.

Abstract: A method of manufacturing a magnetoresistive device according to an embodiment includes: forming an underlying film including silicon, oxygen, and carbon, on a substrate; performing plasma ashing on the underlying film by using plasma of an oxygen-containing gas; forming a multilayer film including a metal layer and a magnetic layer, on the underlying film subjected to ashing; and performing plasma etching on the multilayer film by using plasma of a hydrogen-containing gas.

Abstract: In one embodiment, a method for etching a workpiece including a lower electrode and a multi-layer film disposed on the lower electrode, the multi-layer film including a first magnetic layer, a second magnetic layer, and an insulating layer interposed between the first magnetic layer and the second magnetic layer, through a mask, is provided. The method includes exposing the workpiece to plasma of first processing gas which contains first rare gas and second rare gas having an atomic number larger than that of the first rare gas, and does not contain hydrogen gas.