Patents by Inventor Song Yun Kang

Song Yun Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11171286
    Abstract: There is provided a method of processing a workpiece for manufacturing a magnetoresistive effect element, the workpiece including a first multilayer film and a second multilayer film, the first multilayer film including a first magnetic layer, a second magnetic layer and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and the second multilayer film constituting a pinning layer in the magnetoresistive effect element. The method includes etching the first multilayer film and the second multilayer film, and heating the workpiece after the etching or during the etching. The heating includes heating the workpiece while adjusting an ambient condition of the workpiece.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: November 9, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takuya Kubo, Song yun Kang
  • Patent number: 11152564
    Abstract: The first film forming device is configured to form a film using plasma in a consistent vacuum state. In the forming of the first substrate product, the first substrate product is formed in a consistent vacuum state. The first substrate product has the support base, a first lamination region, and a metal region. The first lamination region is provided on the support base. The metal region is provided on the first lamination region, and has a first metal layer and a second metal layer. The first metal layer is provided on the first lamination region, and the second metal layer is provided on the first metal layer. A material of the first metal layer has TiN or Ta, and a material of the second metal layer has TaN or Ru.
    Type: Grant
    Filed: May 6, 2020
    Date of Patent: October 19, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Takuya Kubo, Song yun Kang
  • Publication number: 20210305066
    Abstract: A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.
    Type: Application
    Filed: March 25, 2021
    Publication date: September 30, 2021
    Inventors: Song yun Kang, Toshitake Tsuda, Kenji Sekiguchi, Syuhei Yonezawa, Koji Kagawa
  • Patent number: 10944051
    Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: March 9, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Takuya Kubo, Song yun Kang, Keiichi Shimoda, Tetsuya Ohishi
  • Publication number: 20200373480
    Abstract: The first film forming device is configured to form a film using plasma in a consistent vacuum state. In the forming of the first substrate product, the first substrate product is formed in a consistent vacuum state. The first substrate product has the support base, a first lamination region, and a metal region. The first lamination region is provided on the support base. The metal region is provided on the first lamination region, and has a first metal layer and a second metal layer. The first metal layer is provided on the first lamination region, and the second metal layer is provided on the first metal layer. A material of the first metal layer has TiN or Ta, and a material of the second metal layer has TaN or Ru.
    Type: Application
    Filed: May 6, 2020
    Publication date: November 26, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Takuya KUBO, Song yun KANG
  • Patent number: 10790152
    Abstract: In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: September 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takuya Kubo, Song yun Kang, Tamotsu Morimoto
  • Publication number: 20200243759
    Abstract: In a method of etching according to one embodiment, a multilayer film having a magnetic tunnel junction layer is etched. In the method of etching, a plasma processing apparatus is used. A chamber body of the plasma processing apparatus provides an internal space. In the method of etching, a workpiece is accommodated in the internal space. Next, the multilayer film is etched by plasma of a first gas generated in the internal space. The first gas includes carbon and a rare gas and does not include hydrogen. Next, the multilayer film is further etched by plasma of a second gas generated in the internal space. The second gas includes oxygen and a rare gas and does not include carbon and hydrogen.
    Type: Application
    Filed: October 15, 2018
    Publication date: July 30, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Takuya KUBO, Song yun KANG
  • Publication number: 20190355901
    Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
    Type: Application
    Filed: July 30, 2019
    Publication date: November 21, 2019
    Inventors: Takuya KUBO, Song yun KANG, Keiichi SHIMODA, Tetsuya OHISHI
  • Patent number: 10403814
    Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: September 3, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Takuya Kubo, Song yun Kang, Keiichi Shimoda, Tetsuya Ohishi
  • Publication number: 20190109282
    Abstract: There is provided a method of processing a workpiece for manufacturing a magnetoresistive effect element, the workpiece including a first multilayer film and a second multilayer film, the first multilayer film including a first magnetic layer, a second magnetic layer and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and the second multilayer film constituting a pinning layer in the magnetoresistive effect element. The method includes etching the first multilayer film and the second multilayer film, and heating the workpiece after the etching or during the etching. The heating includes heating the workpiece while adjusting an ambient condition of the workpiece.
    Type: Application
    Filed: October 4, 2018
    Publication date: April 11, 2019
    Inventors: Takuya KUBO, Song yun KANG
  • Patent number: 10181559
    Abstract: There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: January 15, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takuya Kubo, Song yun Kang
  • Publication number: 20180301622
    Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
    Type: Application
    Filed: May 2, 2016
    Publication date: October 18, 2018
    Inventors: Takuya KUBO, Song yun KANG, Keiichi SHIMODA, Tetsuya OHISHI
  • Publication number: 20180190500
    Abstract: In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.
    Type: Application
    Filed: July 15, 2016
    Publication date: July 5, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takuya KUBO, Song yun KANG, Tamotsu MORIMOTO
  • Publication number: 20180182957
    Abstract: There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.
    Type: Application
    Filed: December 14, 2017
    Publication date: June 28, 2018
    Inventors: Takuya KUBO, Song yun KANG
  • Patent number: 9947864
    Abstract: In one embodiment, a method for etching a workpiece including a lower electrode and a multi-layer film disposed on the lower electrode, the multi-layer film including a first magnetic layer, a second magnetic layer, and an insulating layer interposed between the first magnetic layer and the second magnetic layer, through a mask, is provided. The method includes exposing the workpiece to plasma of first processing gas which contains first rare gas and second rare gas having an atomic number larger than that of the first rare gas, and does not contain hydrogen gas.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: April 17, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tamotsu Morimoto, Song yun Kang
  • Publication number: 20170346001
    Abstract: A method of manufacturing a magnetoresistive device according to an embodiment includes: forming an underlying film including silicon, oxygen, and carbon, on a substrate; performing plasma ashing on the underlying film by using plasma of an oxygen-containing gas; forming a multilayer film including a metal layer and a magnetic layer, on the underlying film subjected to ashing; and performing plasma etching on the multilayer film by using plasma of a hydrogen-containing gas.
    Type: Application
    Filed: May 25, 2017
    Publication date: November 30, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takuya KUBO, Song yun KANG
  • Publication number: 20170200886
    Abstract: In one embodiment, a method for etching a workpiece including a lower electrode and a multi-layer film disposed on the lower electrode, the multi-layer film including a first magnetic layer, a second magnetic layer, and an insulating layer interposed between the first magnetic layer and the second magnetic layer, through a mask, is provided. The method includes exposing the workpiece to plasma of first processing gas which contains first rare gas and second rare gas having an atomic number larger than that of the first rare gas, and does not contain hydrogen gas.
    Type: Application
    Filed: August 6, 2015
    Publication date: July 13, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tamotsu MORIMOTO, Song yun KANG
  • Patent number: 9611545
    Abstract: A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part R1 and supplying oxygen gas from a third gas supply source (oxygen gas supply source) G3 into a reaction container, controlling heating units (heaters H1, H2 and H3) with a control device CONT such that temperature T1 of the first raw material storing part R1, temperature T2 of a second raw material storing part R2 and temperature T3 of the installation base on which the substrate is disposed satisfy a relationship of T1<T2<T3. Thus, according to the production method of the present disclosure, it is possible to produce a high-quality ZnO film.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: April 4, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Song yun Kang, Yoshinao Kumagai, Akinori Koukitu
  • Publication number: 20150225846
    Abstract: A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part R1 and supplying oxygen gas from a third gas supply source (oxygen gas supply source) G3 into a reaction container, controlling heating units (heaters H1, H2 and H3) with a control device CONT such that temperature T1 of the first raw material storing part R1, temperature T2 of a second raw material storing part R2 and temperature T3 of the installation base on which the substrate is disposed satisfy a relationship of T1<T2<T3. Thus, according to the production method of the present disclosure, it is possible to produce a high-quality ZnO film.
    Type: Application
    Filed: June 19, 2013
    Publication date: August 13, 2015
    Inventors: Song yun Kang, Yoshinao Kumagai, Akinori Koukitu
  • Publication number: 20140299272
    Abstract: There is provided a plasma generation device, comprising: a waveguide configured to propagate a microwave; a plasma generation vessel connected to the waveguide; and a dielectric window interposed between the waveguide and the plasma generation vessel to introduce the microwave propagated by the waveguide into the plasma generation vessel. The plasma generation vessel is sphere-shaped and is disposed adjacent to a processing vessel configured to accommodate a substrate, and an interior of the plasma generation vessel is in communication with an interior of the processing vessel.
    Type: Application
    Filed: June 18, 2014
    Publication date: October 9, 2014
    Inventors: Akihiro TSUJI, Song yun KANG