Patents by Inventor Songjoo Oh

Songjoo Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of preparing quantum dot-inorganic matrix composites
    Patent number: 7985607
    Abstract: A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: July 26, 2011
    Assignees: Samsung Electronics Co., Ltd., Pohang University of Science and Technology Academy-Industry Foundation
    Inventors: Sungjee Kim, JinSik Lee, SongJoo Oh
  • Nanocrystal-polydimethylsiloxane composite and preparation method thereof
    Patent number: 7964279
    Abstract: Disclosed herein are a nanocrystal-polydimethylsiloxane composite and a method for preparing the same. More specifically, provided are a nanocrystal-polydimethylsiloxane composite in which one or more polydimethylsiloxane derivatives having urea cross-links are bound to the surface of a nanocrystal, and a method for preparing the same. The nanocrystal-polydimethylsiloxane composite comprises optically transparent polydimethylsiloxane with remarkably high durability, thus imparting improved luminescence efficiency and product reliability to various electronic devices, when applied as a luminescent material to the electronic devices.
    Type: Grant
    Filed: October 29, 2008
    Date of Patent: June 21, 2011
    Assignees: Samsung Electronics Co., Ltd., Pohang University of Science and Technology Academy-Industry Foundation
    Inventors: Sungjee Kim, JinSik Lee, Songjoo Oh
  • Nanocrystal-polydimethylsiloxane composite and preparation method thereof
    Publication number: 20090281265
    Abstract: Disclosed herein are a nanocrystal-polydimethylsiloxane composite and a method for preparing the same. More specifically, provided are a nanocrystal-polydimethylsiloxane composite in which one or more polydimethylsiloxane derivatives having urea cross-links are bound to the surface of a nanocrystal, and a method for preparing the same. The nanocrystal-polydimethylsiloxane composite comprises optically transparent polydimethylsiloxane with remarkably high durability, thus imparting improved luminescence efficiency and product reliability to various electronic devices, when applied as a luminescent material to the electronic devices.
    Type: Application
    Filed: October 29, 2008
    Publication date: November 12, 2009
    Applicants: Samsung Electronics Co, Ltd, Pohang University of Science & Technologies Academy-Industry Foundation
    Inventors: Sungjee Kim, JinSik Lee, Songjoo Oh
  • Method of preparing quantum dot-inorganic matrix composites
    Publication number: 20090267051
    Abstract: A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.
    Type: Application
    Filed: January 12, 2009
    Publication date: October 29, 2009
    Applicants: Samsung Electronics Co., Ltd, Pohang University of Science and Technology Academy-Industry Foundation
    Inventors: Sungjee Kim, JinSik Lee, SongJoo Oh