Patents by Inventor Songlin Feng
Songlin Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11397489Abstract: The present disclosure provides a touch display panel, a touch display device, and a touch detection method. The touch display panel includes a base substrate, touch driving electrodes, insulated from each other and arranged in an array on the base substrate, and touch sensing electrodes, insulated from each other and surrounding each of the touch driving electrodes, that the touch driving electrodes are disposed in a same layer as the touch sensing electrodes; and an integrated circuit, that the touch driving electrodes and the touch sensing electrodes are electrically connected to the integrated circuit, the integrated circuit sends touch driving signals to the touch driving electrodes to perform a touch scan, and the integrated circuit receives sensing signal change quantities of the touch sensing electrodes surrounding a same one of the touch driving electrodes, to determine a touch position.Type: GrantFiled: December 13, 2019Date of Patent: July 26, 2022Assignee: Shanghai AVIC OPTO Electronics Co., Ltd.Inventors: Chunyang Huang, Yong Fan, Jiacheng Zhong, Yu Huang, Songlin Feng
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Patent number: 11079884Abstract: Touch display panel, operating method, and a touch display device are provided. The touch display panel includes a base substrate, a plurality of electrode blocks arranged in an array on the base substrate, a first driving unit including a plurality of first pins, a plurality of switch transistors, and a second driving unit including at least a plurality of first sub-pins and a plurality of second sub-pins. Each electrode block is electrically connected to the first driving unit through at least one touch signal line; a drain of at least one first switch transistor is electrically connected to the same first sub-pin through a same first lead; and a drain of at least one second switch transistor is electrically connected to the same second sub-pin through a same second lead.Type: GrantFiled: December 4, 2019Date of Patent: August 3, 2021Assignee: Shanghai AVIC OPTO Electronics Co., Ltd.Inventors: Guihua Yin, Songlin Feng, Huanhua Zhi, Huihui Xie, Qingpeng Liao
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Publication number: 20210064162Abstract: Touch display panel, operating method, and a touch display device are provided. The touch display panel includes a base substrate, a plurality of electrode blocks arranged in an array on the base substrate, a first driving unit including a plurality of first pins, a plurality of switch transistors, and a second driving unit including at least a plurality of first sub-pins and a plurality of second sub-pins. Each electrode block is electrically connected to the first driving unit through at least one touch signal line; a drain of at least one first switch transistor is electrically connected to the same first sub-pin through a same first lead; and a drain of at least one second switch transistor is electrically connected to the same second sub-pin through a same second lead.Type: ApplicationFiled: December 4, 2019Publication date: March 4, 2021Inventors: Guihua YIN, Songlin FENG, Huanhua ZHI, Huihui XIE, Qingpeng LIAO
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Publication number: 20210064212Abstract: The present disclosure provides a touch display panel, a touch display device, and a touch detection method. The touch display panel includes a base substrate, touch driving electrodes, insulated from each other and arranged in an array on the base substrate, and touch sensing electrodes, insulated from each other and surrounding each of the touch driving electrodes, that the touch driving electrodes are disposed in a same layer as the touch sensing electrodes; and an integrated circuit, that the touch driving electrodes and the touch sensing electrodes are electrically connected to the integrated circuit, the integrated circuit sends touch driving signals to the touch driving electrodes to perform a touch scan, and the integrated circuit receives sensing signal change quantities of the touch sensing electrodes surrounding a same one of the touch driving electrodes, to determine a touch position.Type: ApplicationFiled: December 13, 2019Publication date: March 4, 2021Inventors: Chunyang HUANG, Yong FAN, Jiacheng ZHONG, Yu HUANG, Songlin FENG
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Patent number: 10276234Abstract: An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100?x?y, where 0<x<80 and 0<y<100?x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories.Type: GrantFiled: December 11, 2015Date of Patent: April 30, 2019Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Liangcai Wu, Min Zhu, Zhitang Song, Feng Rao, Cheng Peng, Xilin Zhou, Kun Ren, Songlin Feng
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Publication number: 20160099050Abstract: An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100?x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories.Type: ApplicationFiled: December 11, 2015Publication date: April 7, 2016Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Liangcai WU, Min ZHU, Zhitang SONG, Feng RAO, Cheng PENG, Xilin ZHOU, Kun REN, Songlin FENG
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Publication number: 20140192592Abstract: The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100-x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. In a crystallization process of an Sb—Te phase-change material in the prior art, gain growth dominates, so the phase change rate is high, but the retention cannot meet industrial requirements.Type: ApplicationFiled: December 26, 2012Publication date: July 10, 2014Applicant: Shanghai Institute of Microsystem and Information Technology Chinese AcademyInventors: Liangcai Wu, Min Zhu, Zhitang Song, Feng Rao, Cheng Peng, Xilin Zhou, Kun Ren, Songlin Feng
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Patent number: 8722455Abstract: The present invention discloses a phase change memory structure having low-k dielectric heat-insulating material and fabrication method thereof, wherein the phase change memory cell comprises diode, heating electrode, reversible phase change resistor, top electrode and etc; the heating electrode and reversible phase change resistor are surrounded by low-k dielectric heat-insulating layer; an anti-diffusion dielectric layer is designed between the reversible phase change resistor and the low-k dielectric heat-insulating layer surrounding thereof. The present invention utilizes low-k dielectric material as heat-insulating material, thereby avoiding thermal crosstalk and mutual influence during operation between phase change memory cells, enhancing the reliability of devices, and eliminating the influence of temperature, pressure and etc. on phase change random access memory (PCRAM) data retention during the change from amorphous to polycrystalline states.Type: GrantFiled: June 24, 2011Date of Patent: May 13, 2014Assignee: Chinese Academy of SciencesInventors: Zhitang Song, Liangcai Wu, Songlin Feng
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Publication number: 20130292629Abstract: The present invention provides a phase change memory cell and fabrication method thereof, wherein said phase change memory cell comprises a semiconductor substrate, a first electrode layer, a phase change material layer, a second electrode layer and an extraction electrode, as well as a high resistance material layer used to prevent said phase change material layer from over-corrosion during the chemical mechanical polishing process, and wherein said high resistance material layer has a resistance ten or more times that of the phase change material layer and can be used to prevent phase change material layer from over-corrosion during the chemical mechanical polishing process and thus enhance the memory performance and the yield of phase change memory cell.Type: ApplicationFiled: June 23, 2011Publication date: November 7, 2013Inventors: Bo Liu, Zhitang Song, Ting Zhang, Ying Li, Min Zhong, Songlin Feng
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Publication number: 20130175493Abstract: The present invention discloses a phase change memory structure having low-k dielectric heat-insulating material and fabrication method thereof, wherein the phase change memory cell comprises diode, heating electrode, reversible phase change resistor, top electrode and etc; the heating electrode and reversible phase change resistor are surrounded by low-k dielectric heat-insulating layer; an anti-diffusion dielectric layer is designed between the reversible phase change resistor and the low-k dielectric heat-insulating layer surrounding thereof. The present invention utilizes low-k dielectric material as heat-insulating material, thereby avoiding thermal crosstalk and mutual influence during operation between phase change memory cells, enhancing the reliability of devices, and eliminating the influence of temperature, pressure and etc. on phase change random access memory (PCRAM) data retention during the change from amorphous to polycrystalline states.Type: ApplicationFiled: June 24, 2011Publication date: July 11, 2013Inventors: Zhitang Song, Liangcai Wu, Songlin Feng
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Patent number: 7790518Abstract: A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).Type: GrantFiled: February 7, 2008Date of Patent: September 7, 2010Assignee: Silicon Storage Technology, Inc.Inventors: Bomy Chen, Ya-Fen Lin, Zhitang Song, Songlin Feng
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Patent number: 7550358Abstract: A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped regions are formed in the upper surface of an n-type substrate. A trench is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements and electrode elements for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements on the trench side-walls and the previously P-type doped portions on the wafer surface. The trench intersects with insulating elements, so that insulating elements mutually insulate adjacent electrical elements. P-n junctions between the electrical elements and the substrate insulate the electrical elements from the substrate.Type: GrantFiled: June 11, 2007Date of Patent: June 23, 2009Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesInventors: Xinxin Li, Heng Yang, Yuelin Wang, Songlin Feng
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Publication number: 20080131982Abstract: A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).Type: ApplicationFiled: February 7, 2008Publication date: June 5, 2008Inventors: Bomy Chen, Ya-Fen Lin, Zhitang Song, Songlin Feng
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Patent number: 7351613Abstract: A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).Type: GrantFiled: November 4, 2004Date of Patent: April 1, 2008Assignee: Silicon Storage Technology, Inc.Inventors: Bomy Chen, Ya-Fen Lin, Zhitang Song, Songlin Feng
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Publication number: 20070259471Abstract: A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped region(s) 25 are formed in the upper surface of an n-type substrate 20. A trench 22 is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion 21 of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements 27 and electrode elements 29 for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements 27, 29 on the trench side-walls and the previously P-typedoped portions 25 on the wafer surface. The trench 22 intersects with insulating elements 28, so that insulating elements 28 mutually insulate adjacent electrical elements 27, 29.Type: ApplicationFiled: June 11, 2007Publication date: November 8, 2007Inventors: Xinxin Li, Heng Yang, Yuelin Wang, Songlin Feng
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Publication number: 20060094197Abstract: A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).Type: ApplicationFiled: November 4, 2004Publication date: May 4, 2006Inventors: Bomy Chen, Ya-Fen Lin, Zhitang Song, Songlin Feng