Patents by Inventor Songlin Xu

Songlin Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10426036
    Abstract: A power tube connection structure includes a substrate, a printed circuit board, and a power tube, where a through groove allowing the power tube to pass through is cut into the printed circuit board, a mounting groove is cut into the upper surface of the substrate at a location corresponding to the through groove, one end of the power tube extends through the through groove, and is welded onto a bottom face of the mounting groove, the end of the power tube that extends into the mounting groove abuts onto a side wall of the mounting groove close to an output end of the power amplifier, and a solder flux escape channel is made into the side wall of the mounting groove close to the output end of the power amplifier.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: September 24, 2019
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Songlin Li, Pengbo Tian, Qingyun Wang, Liang Xu
  • Publication number: 20190223293
    Abstract: A power tube connection structure includes a substrate, a printed circuit board, and a power tube, where a through groove allowing the power tube to pass through is cut into the printed circuit board, a mounting groove is cut into the upper surface of the substrate at a location corresponding to the through groove, one end of the power tube extends through the through groove, and is welded onto a bottom face of the mounting groove, the end of the power tube that extends into the mounting groove abuts onto a side wall of the mounting groove close to an output end of the power amplifier, and a solder flux escape channel is made into the side wall of the mounting groove close to the output end of the power amplifier.
    Type: Application
    Filed: November 15, 2018
    Publication date: July 18, 2019
    Inventors: Songlin LI, Pengbo TIAN, Qingyun WANG, Liang XU
  • Publication number: 20190154575
    Abstract: A device and method of enhancing terahertz wave signals based on a hollow metal waveguide are disclosed. Simple devices such as a beam splitter, multiple plane mirrors, a beam combiner and an adjustable delay system are used. Two laser beams having a wavelength of 800 nm split by the beam splitter generate a fixed time phase delay, and are converged in the hollow metal waveguide to sequentially overlap with pulse of a laser having a wavelength of 400 nm for nonlinear interaction to ionize gas in the optical fiber to generate terahertz waves. The hollow metal waveguide can converge and transmit the generated terahertz waves due to its total reflection characteristics.
    Type: Application
    Filed: January 25, 2019
    Publication date: May 23, 2019
    Inventors: Yan PENG, Bowei XU, Yiming ZHU, Tengfei ZHANG, Wanqing CHEN, Binbin QI, Songlin ZHUANG
  • Publication number: 20160322205
    Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect the flow of the processing gas.
    Type: Application
    Filed: July 11, 2016
    Publication date: November 3, 2016
    Inventors: Songlin XU, Gang SHI, Tuqiang NI
  • Patent number: 9431216
    Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: August 30, 2016
    Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT INC, SHANGHAI
    Inventors: Songlin Xu, Gang Shi, Tuqiang Ni
  • Publication number: 20160153486
    Abstract: A cylindrical internal thread is arranged in an inner hole of the internal threaded part, a cylindrical external thread is arranged on a screw of the external threaded part, the root of the external thread or the internal thread has a wedge-shaped inclined surface forming an included angle a or an included angle ? with a longitudinal center axis of the external thread or the internal thread. After the internal thread part and the external thread part are mutually tightened, a surface of the internal thread or the external thread and the wedge-shaped inclined surface are mutually close contact structure, that is, a horizontal locking structure, and as long as the surface of the internal thread or the external thread and the wedge-shaped inclined surface are in close contact through pretightening force, loosening can be prevented in cylindrical threaded part connecting pairs having threaded surfaces and made of various materials.
    Type: Application
    Filed: April 15, 2014
    Publication date: June 2, 2016
    Inventor: Songlin XU
  • Publication number: 20160131176
    Abstract: An anti-loosening cylindrical threaded part has internal and external threaded parts. A cylindrical internal thread is arranged in an internal threaded part inner hole, a cylindrical external thread is arranged on an external threaded part screw having a cylindrical surface parallel to an external thread longitudinal center axis, and a cylindrical surface external diameter is less than an external thread maximum external diameter. Surfaces of the threads and the cylindrical surface are not covered with anti-loosening materials. After the threads are mutually screwed, the cylindrical surface and an internal thread crest are mutually close contact structures, that is, a horizontal locking structure.
    Type: Application
    Filed: April 15, 2014
    Publication date: May 12, 2016
    Inventor: Songlin XU
  • Publication number: 20160115990
    Abstract: An anti-loosening cylindrical threaded part includes internal and external threaded part. A cylindrical internal thread is arranged in inner hole of internal threaded part a cylindrical external thread is arranged on a screw of external threaded part, the inner hole of internal threaded part has cylindrical surface parallel to a longitudinal center axis of internal thread, and an inner diameter of cylindrical surface is greater than minimum inner diameter of internal thread. Surfaces of internal and external thread and cylindrical surface are not covered with anti-loosening materials.
    Type: Application
    Filed: April 15, 2014
    Publication date: April 28, 2016
    Inventor: Songlin Xu
  • Patent number: 9095038
    Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.
    Type: Grant
    Filed: December 26, 2011
    Date of Patent: July 28, 2015
    Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA
    Inventors: Shi Gang, Songlin Xu, TuQiang Ni
  • Publication number: 20140120731
    Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.
    Type: Application
    Filed: October 29, 2013
    Publication date: May 1, 2014
    Applicant: Advanced Micro-Fabrication Equipment Inc, Shanghai
    Inventors: Songlin XU, Gang SHI, Tuqiang NI
  • Publication number: 20140083613
    Abstract: The present disclosure provides a gas supply device used in vacuum processing chambers, which comprises: a first gas source and a second gas source; a first gas switch in which its input is connected to the first gas source and its output can be switchably connected to the gas inlets of two vacuum processing chambers or two processing stations in one vacuum processing chamber; a second gas switch, in which its input is connected to the second gas source and its output can be switchably connected to the gas inlets of the two vacuum processing chambers or the two processing stations; a control device for controlling the switching of the first gas switch and the second gas switch, so as to make the first gas source and the second gas source complementarily switch between two vacuum processing chambers or two processing stations in one vacuum processing chamber.
    Type: Application
    Filed: September 18, 2013
    Publication date: March 27, 2014
    Inventors: Songlin XU, Tuqiang NI, Qiang WEI
  • Publication number: 20140083453
    Abstract: A method for in situ cleaning of a Metal-Organic Chemical Vapor Deposition reaction chamber is provided in embodiments of the present invention. The method includes: introducing a first cleaning gas into the reaction chamber, converting the first cleaning gas into first plasma inside the reaction chamber to completely remove a carbonaceous organic substance inside the reaction chamber, wherein the first cleaning gas includes a first oxygen-containing gas; and introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into second plasma inside the reaction chamber to completely remove a metallic oxide inside the reaction chamber, wherein the second cleaning gas includes a first halogen-containing gas.
    Type: Application
    Filed: September 19, 2013
    Publication date: March 27, 2014
    Applicant: Advanced Micro-Fabrication Equipment Inc, Shanghai
    Inventors: Gerald Zheyao Yin, Zhiyou Du, Shuang Meng, Yang Wang, Ying Zhang, Songlin Xu, Ban Zhu, Haruhisa Takiguchi
  • Publication number: 20130102155
    Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.
    Type: Application
    Filed: December 26, 2011
    Publication date: April 25, 2013
    Inventors: Shi GANG, Songlin Xu, TuQiang Ni
  • Patent number: 8093157
    Abstract: Removing photoresist from a workpiece is described when a region of tungsten is exposed. A plasma is generated from a gas input consisting essentially of hydrogen gas and oxygen gas in a predetermined ratio. The plasma causes the photoresist to be removed from the workpiece while the region of tungsten is left substantially unmodified. The ratio of the hydrogen to oxygen can be adjusted to a particular value which causes the photoresist to be removed at about a maximum removal rate that corresponds to a minimum tungsten loss rate of about zero. Polysilicon oxidation in the presence of tungsten is described with little or no tungsten loss.
    Type: Grant
    Filed: July 3, 2007
    Date of Patent: January 10, 2012
    Assignee: Mattson Technology, Inc.
    Inventors: Li Diao, Songlin Xu
  • Patent number: 7850139
    Abstract: The present invention provides a transportation frame for an oversize container or the like and a method of installing the frame onto the container or the like. The transportation frame includes a top frame body comprising two top corner fittings each provided with a top corner fitting hole, a bottom frame body comprising two bottom corner fittings each provided with a bottom corner fitting hole, and a plurality of posts each having two ends connected to the top frame body and the bottom frame body respectively. The orientations of the two top corner fitting holes and the distance therebetween, and the orientations of the two bottom corner fitting holes and the distance therebetween satisfy the requirements for coupling with corner fittings of neighboring stacked containers. With the invention, non-standard containers may be easily hoisted, stacked and transported. Moreover, the transportation frame can be easily operated and stored while being reusable.
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: December 14, 2010
    Assignees: China International Marine Containers (Group) Ltd., Qingdao CIMC Special Reefer Co., Ltd.
    Inventors: Tzan Hua Huang, Guohao Huang, Zhiqing Li, Ryan Xu, Niancheng Zhou, Chaofu Xie, Songlin Xu
  • Patent number: 7799685
    Abstract: In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electrical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.
    Type: Grant
    Filed: October 4, 2004
    Date of Patent: September 21, 2010
    Assignee: Mattson Technology, Inc.
    Inventors: Stephen E. Savas, Songlin Xu, David Dutton, Andreas Kadavanich, Rene George
  • Publication number: 20090206056
    Abstract: A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations.
    Type: Application
    Filed: February 6, 2009
    Publication date: August 20, 2009
    Inventors: Songlin Xu, Daniel J. Devine, Wen Ma, Ce Qin, Vijay Vaniapura
  • Patent number: 7561258
    Abstract: An exemplary embodiment providing one or more improvements includes a wafer tilt detection apparatus for use with a wafer processing or manufacturing device that applies a process to the wafer and which utilizes an endpoint signal for determining control of the process applied to the wafer. The wafer tilt apparatus uses the endpoint signal in establishing when the wafer was in a tilted orientation during processing.
    Type: Grant
    Filed: May 16, 2007
    Date of Patent: July 14, 2009
    Assignee: Mattson Technology, Inc.
    Inventors: Songlin Xu, Li Hou, Stephen Hyatt
  • Publication number: 20090039092
    Abstract: The present invention provides a transportation frame for an oversize container or the like and a method of installing the frame onto the container or the like. The transportation frame includes a top frame body comprising two top corner fittings each provided with a top corner fitting hole, a bottom frame body comprising two bottom corner fittings each provided with a bottom corner fitting hole, and a plurality of posts each having two ends connected to the top frame body and the bottom frame body respectively. The orientations of the two top corner fitting holes and the distance therebetween, and the orientations of the two bottom corner fitting holes and the distance therebetween satisfy the requirements for coupling with corner fittings of neighboring stacked containers. With the invention, non-standard containers may be easily hoisted, stacked and transported. Moreover, the transportation frame can be easily operated and stored while being reusable.
    Type: Application
    Filed: August 6, 2007
    Publication date: February 12, 2009
    Applicants: CHINA INTERNATIONAL MARINE CONTAINERS (GROUP) LTD., QUINDAO CIMC SPECIAL REEFER CO., LTD.
    Inventors: T.H. Huang, Guohao Huang, Zhiqing Li, Ryan Xu, Niancheng Zhou, Chaofu Xie, Songlin Xu
  • Publication number: 20090011615
    Abstract: Removing photoresist from a workpiece is described when a region of tungsten is exposed. A plasma is generated from a gas input consisting essentially of hydrogen gas and oxygen gas in a predetermined ratio. The plasma causes the photoresist to be removed from the workpiece while the region of tungsten is left substantially unmodified. The ratio of the hydrogen to oxygen can be adjusted to a particular value which causes the photoresist to be removed at about a maximum removal rate that corresponds to a minimum tungsten loss rate of about zero. Polysilicon oxidation in the presence of tungsten is described with little or no tungsten loss.
    Type: Application
    Filed: July 3, 2007
    Publication date: January 8, 2009
    Inventors: Li Diao, Songlin Xu