Abstract: A retrieval apparatus, a method, and a storage medium are disclosed. The retrieval apparatus includes a memory and a processor, wherein the processor is configured to acquire a retrieval request, and the retrieval request includes the query vector; according to the query vector, generate and execute a first access request corresponding to the first memory according to the first graph index and the index node in the candidate pool; determine and process the data acquired by the first access request corresponding to the first memory, corresponding to the absence of redundant data in the previous storage pool, and store the result in the result pool; and output the data in the result pool corresponding to the candidate pool does not include unreachable index nodes. The retrieval apparatus improves the efficiency of the data reading process and further improves the efficiency of the retrieval process.

Abstract: Embodiments of this application disclose a distributed retrieval method performed by a distributed retrieval system including a retrieval node and an access node. The retrieval node receives a retrieval request forwarded by an access node, at least two video memory blocks are searched for matching features matching a to-be-detected feature of an image, each video memory block being a unique physical storage unit with a fixed length, and then returns retrieval results to the access node, the retrieval results being used for indicating the features matching the to-be-detected feature. Because cache spaces are allocated between the at least two video memory blocks using a blockchain structure, the features can be continuously stored in the video memory blocks, thereby overcoming the problem of data discretization brought about by a storage hole caused by deletion in the related art.

Abstract: Embodiments of this application disclose a distributed retrieval method performed by a distributed retrieval system including a retrieval node and an access node. The retrieval node receives a retrieval request forwarded by an access node, at least two video memory blocks are searched for matching features matching a to-be-detected feature of an image, each video memory block being a unique physical storage unit with a fixed length, and then returns retrieval results to the access node, the retrieval results being used for indicating the features matching the to-be-detected feature. Because cache spaces are allocated between the at least two video memory blocks using a blockchain structure, the features can be continuously stored in the video memory blocks, thereby overcoming the problem of data discretization brought about by a storage hole caused by deletion in the related art.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect the flow of the processing gas.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.

Abstract: A cylindrical internal thread is arranged in an inner hole of the internal threaded part, a cylindrical external thread is arranged on a screw of the external threaded part, the root of the external thread or the internal thread has a wedge-shaped inclined surface forming an included angle a or an included angle ? with a longitudinal center axis of the external thread or the internal thread. After the internal thread part and the external thread part are mutually tightened, a surface of the internal thread or the external thread and the wedge-shaped inclined surface are mutually close contact structure, that is, a horizontal locking structure, and as long as the surface of the internal thread or the external thread and the wedge-shaped inclined surface are in close contact through pretightening force, loosening can be prevented in cylindrical threaded part connecting pairs having threaded surfaces and made of various materials.

Abstract: An anti-loosening cylindrical threaded part has internal and external threaded parts. A cylindrical internal thread is arranged in an internal threaded part inner hole, a cylindrical external thread is arranged on an external threaded part screw having a cylindrical surface parallel to an external thread longitudinal center axis, and a cylindrical surface external diameter is less than an external thread maximum external diameter. Surfaces of the threads and the cylindrical surface are not covered with anti-loosening materials. After the threads are mutually screwed, the cylindrical surface and an internal thread crest are mutually close contact structures, that is, a horizontal locking structure.

Abstract: An anti-loosening cylindrical threaded part includes internal and external threaded part. A cylindrical internal thread is arranged in inner hole of internal threaded part a cylindrical external thread is arranged on a screw of external threaded part, the inner hole of internal threaded part has cylindrical surface parallel to a longitudinal center axis of internal thread, and an inner diameter of cylindrical surface is greater than minimum inner diameter of internal thread. Surfaces of internal and external thread and cylindrical surface are not covered with anti-loosening materials.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.

Abstract: A method for in situ cleaning of a Metal-Organic Chemical Vapor Deposition reaction chamber is provided in embodiments of the present invention. The method includes: introducing a first cleaning gas into the reaction chamber, converting the first cleaning gas into first plasma inside the reaction chamber to completely remove a carbonaceous organic substance inside the reaction chamber, wherein the first cleaning gas includes a first oxygen-containing gas; and introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into second plasma inside the reaction chamber to completely remove a metallic oxide inside the reaction chamber, wherein the second cleaning gas includes a first halogen-containing gas.

Abstract: The present disclosure provides a gas supply device used in vacuum processing chambers, which comprises: a first gas source and a second gas source; a first gas switch in which its input is connected to the first gas source and its output can be switchably connected to the gas inlets of two vacuum processing chambers or two processing stations in one vacuum processing chamber; a second gas switch, in which its input is connected to the second gas source and its output can be switchably connected to the gas inlets of the two vacuum processing chambers or the two processing stations; a control device for controlling the switching of the first gas switch and the second gas switch, so as to make the first gas source and the second gas source complementarily switch between two vacuum processing chambers or two processing stations in one vacuum processing chamber.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.

Abstract: Removing photoresist from a workpiece is described when a region of tungsten is exposed. A plasma is generated from a gas input consisting essentially of hydrogen gas and oxygen gas in a predetermined ratio. The plasma causes the photoresist to be removed from the workpiece while the region of tungsten is left substantially unmodified. The ratio of the hydrogen to oxygen can be adjusted to a particular value which causes the photoresist to be removed at about a maximum removal rate that corresponds to a minimum tungsten loss rate of about zero. Polysilicon oxidation in the presence of tungsten is described with little or no tungsten loss.

Abstract: The present invention provides a transportation frame for an oversize container or the like and a method of installing the frame onto the container or the like. The transportation frame includes a top frame body comprising two top corner fittings each provided with a top corner fitting hole, a bottom frame body comprising two bottom corner fittings each provided with a bottom corner fitting hole, and a plurality of posts each having two ends connected to the top frame body and the bottom frame body respectively. The orientations of the two top corner fitting holes and the distance therebetween, and the orientations of the two bottom corner fitting holes and the distance therebetween satisfy the requirements for coupling with corner fittings of neighboring stacked containers. With the invention, non-standard containers may be easily hoisted, stacked and transported. Moreover, the transportation frame can be easily operated and stored while being reusable.

Abstract: In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electrical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.

Abstract: A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations.

Abstract: An exemplary embodiment providing one or more improvements includes a wafer tilt detection apparatus for use with a wafer processing or manufacturing device that applies a process to the wafer and which utilizes an endpoint signal for determining control of the process applied to the wafer. The wafer tilt apparatus uses the endpoint signal in establishing when the wafer was in a tilted orientation during processing.

Abstract: The present invention provides a transportation frame for an oversize container or the like and a method of installing the frame onto the container or the like. The transportation frame includes a top frame body comprising two top corner fittings each provided with a top corner fitting hole, a bottom frame body comprising two bottom corner fittings each provided with a bottom corner fitting hole, and a plurality of posts each having two ends connected to the top frame body and the bottom frame body respectively. The orientations of the two top corner fitting holes and the distance therebetween, and the orientations of the two bottom corner fitting holes and the distance therebetween satisfy the requirements for coupling with corner fittings of neighboring stacked containers. With the invention, non-standard containers may be easily hoisted, stacked and transported. Moreover, the transportation frame can be easily operated and stored while being reusable.

Abstract: Removing photoresist from a workpiece is described when a region of tungsten is exposed. A plasma is generated from a gas input consisting essentially of hydrogen gas and oxygen gas in a predetermined ratio. The plasma causes the photoresist to be removed from the workpiece while the region of tungsten is left substantially unmodified. The ratio of the hydrogen to oxygen can be adjusted to a particular value which causes the photoresist to be removed at about a maximum removal rate that corresponds to a minimum tungsten loss rate of about zero. Polysilicon oxidation in the presence of tungsten is described with little or no tungsten loss.