Abstract: Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.

Abstract: Methods of forming a hardmask material film are provided.

Abstract: Methods of forming a hardmask material film are provided.

Abstract: Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.

Abstract: In a method of fabricating patterns in an integrated circuit device, first mask patterns, sacrificial patterns, and second mask patterns are formed on a target layer such that the sacrificial patterns are provided between sidewalls of adjacent ones of the first and second mask patterns. The sacrificial patterns between the sidewalls of the adjacent ones of the first and second mask patterns are selectively removed using a dry etch-back process, and the target layer is patterned using the first and second mask patterns as a mask.

Abstract: A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

Abstract: A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.