Patents by Inventor Songwoung Hong

Songwoung Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lateral P-N junction black phosphorus thin film, and method of manufacturing the same
    Patent number: 10468604
    Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: November 5, 2019
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Ansoon Kim, Songwoung Hong, Jeong Won Kim, Hyuksang Kwon
  • Quantum-dot photoactive-layer and method for manufacture thereof
    Patent number: 10062799
    Abstract: Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: August 28, 2018
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Ansoon Kim, Kyung Joong Kim, Songwoung Hong
  • LATERAL P-N JUNCTION BLACK PHOSPHORUS THIN FILM, AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20180175303
    Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.
    Type: Application
    Filed: December 28, 2016
    Publication date: June 21, 2018
    Inventors: Ansoon KIM, Songwoung HONG, Jeong Won KIM, Hyuksang KWON
  • QUANTUM-DOT PHOTOACTIVE-LAYER AND METHOD FOR MANUFACTURE THEREOF
    Publication number: 20170062646
    Abstract: Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.
    Type: Application
    Filed: October 15, 2015
    Publication date: March 2, 2017
    Inventors: Ansoon Kim, Kyung Joong Kim, Songwoung Hong