Abstract: A method of preparing a bimodal positive electrode active material precursor and a positive electrode active material prepared from the same are disclosed herein. In some embodiments, the method includes inputting a first reaction source material including a first aqueous transition metal solution into a reactor, precipitating at pH 12 or more to induce nucleation of a first positive electrode active material precursor particle, and at less than pH 12 to induce growth of the same, inputting a second reaction source material including a second aqueous transition metal solution into the reactor containing the first positive electrode active material precursor particle, precipitating at pH 12 or more to induce the nucleation of a second positive electrode active material precursor particle, and at less than pH 12 to induce simultaneous growth of the first and second positive electrode active material precursor particles, thereby preparing a bimodal positive electrode active material precursor.

Abstract: A method for preparing a bimodal-type positive electrode active material precursor is provided. The method is capable of not only increasing productivity by preparing positive electrode active material precursors having small diameters and large diameters in a single reactor but also improving packing density per unit volume, a positive electrode active material precursor prepared by the preparation method and having improved packing density, and a positive electrode for a secondary battery and a lithium secondary battery including the same.

Abstract: A positive electrode active material is provided, including a lithium transition metal oxide containing nickel (Ni), cobalt (Co), and manganese (Mn), wherein the lithium transition metal oxide has 60 mol % or more nickel (Ni) with respect the total number of moles of transition metal except lithium, and is doped with at least any one doping element selected from the group consisting of B, Zr, Mg, Ti, Sr, W, and Al. The positive electrode active material has an average particle diameter (D50) of 4 ?m to 10 ?m after rolling at a rolling density of 3.0 g/cm3 to 3.3 g/cm3 and has the form of a single particle. A method of preparing the positive electrode active material, a positive electrode including the positive electrode active material, and a lithium secondary battery are also provided.

Abstract: An electrostatic chuck assembly includes an electrostatic chuck including a circular-shaped electrostatic dielectric layer on which a wafer is mounted and an adsorption electrode in the electrostatic dielectric layer, and a control part configured to control the electrostatic chuck, wherein the adsorption electrode comprises a plurality of sub-adsorption electrodes separated from each other in an X direction and a Y direction perpendicular to the X direction on a plane level from a central portion of the electrostatic dielectric layer.

Abstract: A positive electrode active material for a secondary battery which includes a lithium composite transition metal oxide including nickel (Ni), cobalt (Co), and manganese (Mn), wherein the lithium composite transition metal oxide has a layered crystal structure of space group R3m, includes the nickel (Ni) in an amount of 60 mol % or less based on a total amount of transition metals, includes the cobalt (Co) in an amount greater than an amount of the manganese (Mn), and is composed of single particles.

Abstract: An electrostatic chuck assembly includes an electrostatic chuck including a circular-shaped electrostatic dielectric layer on which a wafer is mounted and an adsorption electrode in the electrostatic dielectric layer, and a control part configured to control the electrostatic chuck, wherein the adsorption electrode comprises a plurality of sub-adsorption electrodes separated from each other in an X direction and a Y direction perpendicular to the X direction on a plane level from a central portion of the electrostatic dielectric layer.

Abstract: Disclosed is an intelligent information providing system including: a user terminal requesting a registration of an intent for a word selected from a content recorded on a memo pad and receiving information related to the registered intent or style information on a role model in a group related to the intent; and an information management device registering the intent requested by the user terminal and providing the information related to the registered intent or the style information on the role model in the group related to the intent to the user terminal.

Abstract: Disclosed is an intelligent information providing system including: a user terminal requesting a registration of an intent for a word selected from a content recorded on a memo pad and receiving information related to the registered intent or style information on a role model in a group related to the intent; and an information management device registering the intent requested by the user terminal and providing the information related to the registered intent or the style information on the role model in the group related to the intent to the user terminal.

Abstract: A semiconductor device and a method of forming patterns on a semiconductor device are disclosed. The semiconductor device may include high-density patterns with a minimum size that may be less the resolution limit of a photolithography process, and may have a substrate including a memory cell region and an adjacent connection region, a plurality of first conductive lines extending from the memory cell region to the connection region in a first direction, a plurality of second conductive lines connected from respective first conductive lines to a plurality of pads having a width equal to twice the width of each of the first conductive lines. The method may include two levels of spacer formation to provide sub resolution line widths and spaces as well as selected multiples of the minimum line widths and spaces.

Abstract: A semiconductor device and a method of forming patterns on a semiconductor device are disclosed. The semiconductor device may include high-density patterns with a minimum size that may be less the resolution limit of a photolithography process, and may have a substrate including a memory cell region and an adjacent connection region, a plurality of first conductive lines extending from the memory cell region to the connection region in a first direction, a plurality of second conductive lines connected from respective first conductive lines to a plurality of pads having a width equal to twice the width of each of the first conductive lines. The method may include two levels of spacer formation to provide sub resolution line widths and spaces as well as selected multiples of the minimum line widths and spaces.

Abstract: A method of forming a semiconductor device may include forming a first pattern on a substrate, and forming a first dielectric layer on the first pattern. The first pattern may be between portions of the first dielectric layer and the substrate. A second dielectric layer may be formed on the first dielectric layer, and the first dielectric layer may be between the first pattern and the second dielectric layer. A second pattern may be formed on the second dielectric layer. Portions of the second dielectric layer may be exposed by the second pattern, and the first and second dielectric layers may be between portions of the first and second patterns. The exposed portions of the second dielectric layer may be isotropically etched.

Abstract: A method of forming a semiconductor device may include forming a first pattern on a substrate, and forming a first dielectric layer on the first pattern. The first pattern may be between portions of the first dielectric layer and the substrate. A second dielectric layer may be formed on the first dielectric layer, and the first dielectric layer may be between the first pattern and the second dielectric layer. A second pattern may be formed on the second dielectric layer. Portions of the second dielectric layer may be exposed by the second pattern, and the first and second dielectric layers may be between portions of the first and second patterns. The exposed portions of the second dielectric layer may be isotropically etched.

Abstract: Provided is a method of forming micro-patterns using a multi-photolithography process, including: providing an etch target layer where micro-patterns are to be formed; forming a mask layer on the etch target layer; forming a first mask pattern including engraved portions and embossed portions by etching a predetermined region of the mask layer; forming a final mask pattern in the first mask pattern by etching a predetermined region of the residual embossed portions of the mask layer; and forming micro-patterns by etching the etch target layer using the final mask pattern as an etch mask.