Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of an initial fluid of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the initial fluid. The displacement solution includes at least one solvent and at least one fill material in the form of a water-soluble polymer such as polyvinylpyrrolidone (PVP) or polyacrylamide (PAAM). The solvent is then volatized to deposit the fill material in substantially solid form within the spaces. The fill material may be removed by known plasma ash process via a high ash rate as compared to use of current fill materials, which prevents or mitigates silicon loss.

Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of wash solutions of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the wash solution. The displacement solution includes at least one solvent and at least one fill material which is a polyalkene carbonate (PAC) and/or a saccharide. The solvent is then volatized to deposit the fill material in substantially solid form within the spaces. The fill material may be removed by thermal degradation via heat treatment, wherein the need for removal of the fill material by plasma ashing is obviated in order to prevent or mitigate silicon loss.

Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of an initial fluid of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the initial fluid. The displacement solution includes at least one solvent and at least one, or combination of, a first fill material in the form of a phenol-formaldehyde polymer and/or a second fill material in the form of a polyalkene carbonate (PAC). The solvent is then volatized to deposit the fill materials in substantially solid form within the spaces. The fill materials may be removed by known plasma etch process via a high etch rate as compared to use of current fill materials, which prevents or mitigates silicon loss.

Abstract: A crosslinkable composition includes a first silicon-containing resin comprising alkyl groups and alkyl groups and a second silicon-containing resin comprising alkyl groups. The first silicon-containing resin has a weight average molecular weight from 1000 AMU to 10,000 AMU. The second silicon-containing resin has a weight average molecular weight from 900 AMU to 5000 AMU. The composition further includes at least one solvent and at least one heat-activated catalyst.

Abstract: A composition is provided including a resin including one or more silicon-based materials, one or more organic-based materials, or a combination of silicon-based materials and organic-based materials. The composition further includes a first solvent having a boiling point from 140° C. to 250° C. and a second solvent having a boiling point from 50° C. to 110° C., wherein the a weight ratio of the first solvent to the second solvent is from 1:1 to 1:5. Methods for applying coatings to substrates are also provided.

Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of wash solutions of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the wash solution. The displacement solution includes at least one solvent and at least one fill material which is a polyalkene carbonate (PAC) and/or a saccharide. The solvent is then volatized to deposit the fill material in substantially solid form within the spaces. The fill material may be removed by thermal degradation via heat treatment, wherein the need for removal of the fill material by plasma ashing is obviated in order to prevent or mitigate silicon loss.

Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of an initial fluid of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the initial fluid. The displacement solution includes at least one solvent and at least one, or combination of, a first fill material in the form of a phenol-formaldehyde polymer and/or a second fill material in the form of a polyalkene carbonate (PAC). The solvent is then volatized to deposit the fill materials in substantially solid form within the spaces. The fill materials may be removed by known plasma etch process via a high etch rate as compared to use of current fill materials, which prevents or mitigates silicon loss.

Abstract: A crosslinkable composition includes a first silicon-containing resin comprising alkyl groups and alkyl groups and a second silicon-containing resin comprising alkyl groups. The first silicon-containing resin has a weight average molecular weight from 1000 AMU to 10,000 AMU. The second silicon-containing resin has a weight average molecular weight from 900 AMU to 5000 AMU. The composition further includes at least one solvent and at least one heat-activated catalyst.

Abstract: A composition is provided including a resin including one or more silicon-based materials, one or more organic-based materials, or a combination of silicon-based materials and organic-based materials. The composition further includes a first solvent having a boiling point from 140° C. to 250° C. and a second solvent having a boiling point from 50° C. to 110° C., wherein the a weight ratio of the first solvent to the second solvent is from 1:1 to 1:5. Methods for applying coatings to substrates are also provided.

Abstract: A composition includes a solvent, a catalyst, a polysiloxane including methyl and phenyl pendant groups, and a crosslinker comprising at least one of a phenylene disilyl group and para-disilyl phenylene group. Exemplary crosslinkers include bis silyl benzene, bis alkoxysilane, 1,3 bistriethoxysilyl benzene, and 1,4 bistriethoxysilyl benzene 2,6-bis(triethoxysilyl)-naphthalene, 9,10-bis(triethoxysilyl)-anthracene, and 1,6-bis(trimethoxysilyl)-pyrene.

Abstract: Liquid titanium oxide compositions, methods for forming such compositions, and methods for etching material layers using such compositions are provided. In accordance with an exemplary embodiment, a liquid titanium oxide composition contains a solvent system, an organotitanate, and a high boiling point solvent having a boiling point in the range of about 140° C. to about 400° C.

Abstract: Compositions for use in tri-layer applications are described herein, wherein the composition has a matrix and includes: a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, at least one condensation catalyst, and at least one solvent. Tri-layer structures are also contemplated herein that comprise an organic underlayer (first layer), antireflective compositions and/or films contemplated herein (second layer) and a photoresist material (third layer) that are coupled to one another.

Abstract: Compositions for use in tri-layer applications are described herein, wherein the composition has a matrix and includes: a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, at least one condensation catalyst, and at least one solvent. Tri-layer structures are also contemplated herein that comprise an organic underlayer (first layer), antireflective compositions and/or films contemplated herein (second layer) and a photoresist material (third layer) that are coupled to one another.

Abstract: The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.

Abstract: The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.

Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.

Abstract: A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [Y0.01-1.0SiO1.5-2]a{Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c (where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.

Abstract: The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.

Abstract: The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.