Abstract: An electric contact structure includes a first structural layer; a second structural layer made of dielectric material extending over the first structural layer; and an intermediate layer made of conductive material extending between the first structural layer and the second structural layer. A trench extends in the second structural layer delimited laterally by a wall of the second structural layer and at the bottom by a surface region of the intermediate layer. A diffusion barrier extends in the trench covering the surface region of the intermediate layer and the wall of the second structural layer. The diffusion barrier is a TiW—TiN—TiW tri-layer.

Abstract: An electric contact structure includes a first structural layer; a second structural layer made of dielectric material extending over the first structural layer; and an intermediate layer made of conductive material extending between the first structural layer and the second structural layer. A trench extends in the second structural layer delimited laterally by a wall of the second structural layer and at the bottom by a surface region of the intermediate layer. A diffusion barrier extends in the trench covering the surface region of the intermediate layer and the wall of the second structural layer. The diffusion barrier is a TiW—TiN—TiW tri-layer.

Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.

Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.