Abstract: A line assembly for installation in an aircraft fuselage includes a first line section having a first diameter, a second line section having a second diameter, a set of first line brackets, and a set of second line brackets. The first line brackets include a first receiving space configured to hold the first line section and a first support portion for attaching the first line brackets to a fuselage structural part. The second line brackets include a second receiving space configured to hold the second line section and a second support portion for attaching the second line brackets to the first line section. The second line section includes a higher flexibility than the first line section. The second line section is attached to the first line section through a plurality of second line brackets arranged at a distance to and independent from the first line brackets.

Abstract: An optical element for a lithography system comprises an optical surface and a photoresistor having an electric photoresistor value that varies according to an amount of light incident on a region of the optical surface.

Abstract: Optical signal to noise ratios that more accurately characterize optical link noise are determined. As noise induced by an optical receiver does not generally vary with an input optical signal power, a power of an incoming optical signal is varied at the receiver. A resulting variation in noise measure represents a variation in link noise and does not include any variation caused by receiver noise, as receiver noise does not generally vary with optical signal power. Thus, the contribution of optical link noise can be discerned from other noise induced by the receiver itself. A more accurate characterization of optical link performance is thus provided.

Abstract: Optical signal to noise ratios that more accurately characterize optical link noise are determined. As noise induced by an optical receiver does not generally vary with an input optical signal power, a power of an incoming optical signal is varied at the receiver. A resulting variation in noise measure represents a variation in link noise and does not include any variation caused by receiver noise, as receiver noise does not generally vary with optical signal power. Thus, the contribution of optical link noise can be discerned from other noise induced by the receiver itself. A more accurate characterization of optical link performance is thus provided.

Abstract: A ground milling machine comprising a machine frame, a driver's cab, a drive motor, movement means driven by the drive motor and a milling unit for milling up ground material, wherein the driver's cab has a protection roof and a front window device through which an operator located in the driver's cab can look forward in a forward direction of the ground milling machine.

Abstract: A projection exposure apparatus for semiconductor technology includes an optical arrangement with an optical element having an optically effective surface. The optical arrangement also includes an actuator embedded in the optical element. The actuator is outside the optically effective surface and outside the region located behind the optically effective surface. The optical arrangement is set up to deform the optically effective surface.

Abstract: The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (?EUV) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

Abstract: A projection exposure apparatus for semiconductor technology includes an optical arrangement with an optical element having an optically effective surface. The optical arrangement also includes an actuator embedded in the optical element. The actuator is outside the optically effective surface and outside the region located behind the optically effective surface. The optical arrangement is set up to deform the optically effective surface.

Abstract: The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (?EUV) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

Abstract: An imaging optical system, in particular a projection objective, for microlithography, includes optical elements to guide electromagnetic radiation with a wavelength in a path to image an object field into an image plane. The imaging optical system includes a pupil, having coordinates (p, q), which, together with the image field, having coordinates (x, y) of the optical system, spans an extended 4-dimensional pupil space, having coordinates (x, y, p, q), as a function of which a wavefront W(x, y, p, q) of the radiation passing through the optical system is defined. The wavefront W can therefore be defined in the pupil plane as a function of an extended 4-dimensional pupil space spanned by the image field (x, y) and the pupil (p, q) as W(x, y, p, q)=W(t), with t=(x, y, p, q).

Abstract: A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ? from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Abstract: The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (?EUV) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

Abstract: The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (?EUV) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

Abstract: A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ? from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Abstract: A projection lens images a pattern of a mask arranged in the region of an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation with a work wavelength ?<260 nm. The projection lens has a multiplicity of optical elements with optical surfaces. The projection lens also has a wavefront manipulation system for controllable influencing of the wavefront of the projection radiation travelling from the object plane to the image plane. The wavefront manipulation system has a manipulator having a manipulator element and an actuating device or reversibly changing an optical effect of the manipulator element on radiation of the projection beam path.

Abstract: A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ? from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Abstract: A method of operating a microlithographic projection exposure apparatus includes, in a first step, providing a projection objective that includes a plurality of real manipulators. In a second step, a virtual manipulator is defined that is configured to produce preliminary control signals for at least two of the real manipulators. In a third step, performed during operation of the apparatus, a real image error of the projection objective is determined. In a fourth step, a desired corrective effect is determined. In a fifth step, first virtual control signals for the virtual manipulator are determined. In a sixth step, second virtual control signals for the real manipulators are determined.

Abstract: A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1??1)+iß1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1??2)+iß2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation ?1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ß1 of the first layer material and the deviation ?2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ß2 of the second layer material.

Abstract: A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern includes providing the pattern between an illumination system and a projection lens of a projection exposure apparatus so that the pattern is arranged in the region of an object plane of the projection lens and can be imaged via the projection lens into an image plane of the projection lens. The image plane is optically conjugate with respect to the object plane, and imaging-relevant properties of the pattern can be characterized by pattern data. The method also includes illuminating an illumination region of the pattern with an illumination radiation provided by the illumination system in accordance with an illumination setting which is specific to a use case and which can be characterized by illumination setting data.

Abstract: An optical assembly, in particular for a lithography system for imaging lithographic micro- or nanostructures, includes at least two optical elements arranged successively in a beam path of the optical assembly, an acquisition device designed to acquire radiation signals from marking elements on or at the at least two optical elements, and a control device coupled to the acquisition device and which is designed to determine the plurality of properties of the optically active surface of the at least two optical elements as a function of the information contained in the radiation signals originating from the marking elements. The disclosure also relates to a method for operating the optical assembly.