Abstract: The method serves for the plasma treatment of container-like workpieces. The workpiece is inserted into an at least partially evacuable chamber of a treatment station. The plasma chamber is bounded by a chamber base, a chamber cover and a lateral chamber wall. The plasma treatment causes a coating to be deposited on the workpiece. The plasma is ignited by microwave energy. The coating consists at least of a gas barrier layer and a bonding layer arranged between the workpiece and the gas barrier layer. The gas barrier layer contains SiOx and the bonding layer contains carbon. The gas barrier layer is produced from a gas that contains at least one silicon compound and argon.

Abstract: The method and device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. The method process is optically monitored at least at times. In the optical monitoring, spectral lines of the radiation of the plasma above 500 nanometers are evaluated. Preferably, the evaluation is performed for frequencies above 700 nanometers.

Abstract: A method for the plasma treatment of a workpiece that includes inserting the workpiece into a plasma chamber and depositing, with the effect of a partial vacuum after plasma ignition, a coating on the workpiece by plasma treatment. Plasma ignition occurs by pulsed microwave energy, and alternating “on” phase times and “off” phase times from pulsed microwave excitation are provided by a control. During a beginning portion of the plasma treatment, a first portion of the coating is deposited. Subsequently, a quotient of the “on” phase times and the “off” phase times is increased to deposit a second portion of the coating, which has a different composition than the first portion of the coating. The quotient of the “on” phase times and the “off” phase times is then decreased to form a third portion of the coating, which has a different composition than the second portion of the coating.

Abstract: The method serves for the plasma treatment of container-like workpieces. The workpiece is inserted into an at least partially evacuable chamber of a treatment station. The plasma chamber is bounded by a chamber base, a chamber cover and a lateral chamber wall. The plasma treatment causes a coating to be deposited on the workpiece. The plasma is ignited by microwave energy. The coating consists at least of a gas barrier layer and a bonding layer arranged between the workpiece and the gas barrier layer. The gas barrier layer contains SiOx and the bonding layer contains carbon. The gas barrier layer is produced from a gas that contains at least one silicon compound and argon.

Abstract: The method serves for the plasma treatment of workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber top and a lateral chamber wall. The plasma treatment involves depositing a coating on the workpiece. The ignition of the plasma is performed by microwave energy. The coating consists at least of a gas barrier layer and a protective layer. The gas barrier layer contains SiOx and the protective layer contains carbon. The protective is produced from a gas that contains at least a silicon compound and argon.

Abstract: The method and the device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. A coating is deposited on the workpiece by means of the plasma treatment. The plasma is ignited by pulsed microwave energy. Switch-on phases and switch-off phases of a microwave input are specified by a controller.

Abstract: A device for plasma treatment of workpieces. The workpiece is placed into a chamber of a processing station that can be at least partially evacuated. The plasma chamber is bounded by a chamber floor, a chamber cover, and a side chamber wall. The plasma chamber is coupled to a device for feeding and/or discharging process gases in a controlled manner. The plasma chamber is further disposed on a rotatable plasma wheel supported on a static base. At least one process gas channel is disposed in the region of the base, bounded at least in regions by a cover. The cover is implemented as part of the plasma wheel and includes at least one connection opening to the process gas channel. The connection opening can be coupled to an inner chamber by a connecting channel and at least one control valve.

Abstract: The method and device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. The method process is optically monitored at least at times. In the optical monitoring, spectral lines of the radiation of the plasma above 500 nanometers are evaluated. Preferably, the evaluation is performed for frequencies above 700 nanometers.

Abstract: The device serves for the plasma treatment of workpieces. The workpiece is placed in the chamber of a treatment station which can at least partially be evacuated. The plasma chamber is defined by a chamber bottom, a chamber cover, as well as a lateral chamber wall, and has a positionable gas lance. The gas lance is constructed at least partially of a dielectric.

Abstract: The invention relates to a method and a device for supplying at least one vacuum machining station. A first part of a supply device is arranged on a rotatable carrier element and is guided in such a way that it can be displaced in relation to a fixed second part of the supply device. A gap extends at least partially between the first part and the second part of the supply device, said gap being at least partially unsealed from the environment.