Patents by Inventor Sonoko Tohda

Sonoko Tohda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device and method for making the same
    Publication number: 20040235289
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Application
    Filed: June 22, 2004
    Publication date: November 25, 2004
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
  • Semiconductor integrated circuit device and method for making the same
    Patent number: 6780757
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Grant
    Filed: May 7, 2003
    Date of Patent: August 24, 2004
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
  • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR MAKING THE SAME
    Publication number: 20030199161
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Application
    Filed: May 7, 2003
    Publication date: October 23, 2003
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
  • Semiconductor integrated circuit device and method for making the same
    Patent number: 6583049
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Grant
    Filed: December 3, 2001
    Date of Patent: June 24, 2003
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System Ltd.
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
  • Semiconductor integrated circuit device and method for making the same
    Patent number: 6538329
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: March 25, 2003
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System Ltd.
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
  • Semiconductor integrated circuit device and method for making the same
    Publication number: 20020115281
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Application
    Filed: December 3, 2001
    Publication date: August 22, 2002
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
  • Semiconductor integrated circuit device and method for making the same
    Publication number: 20020019124
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Application
    Filed: August 21, 2001
    Publication date: February 14, 2002
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
  • Semiconductor integrated circuit device and method for making the same
    Patent number: 6300237
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Grant
    Filed: February 8, 1999
    Date of Patent: October 9, 2001
    Assignees: Hitachi Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System Ltd.
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
  • Method for making semiconductor integrated circuit device having interconnection structure using tungsten film
    Patent number: 5904556
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Grant
    Filed: January 11, 1996
    Date of Patent: May 18, 1999
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System, Ltd.
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura