Patents by Inventor SooChang KANG

SooChang KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertically-conducting trench MOSFET
    Patent number: 9379187
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device include: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body to region and filled with a conductive material.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: June 28, 2016
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: SooChang Kang, YoungJae Kim
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20150279939
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device include: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body to region and filled with a conductive material.
    Type: Application
    Filed: June 11, 2015
    Publication date: October 1, 2015
    Applicant: MAGNACHIP SEMICONDUCTOR, LTD.
    Inventors: SooChang KANG, YoungJae KIM
  • Semiconductor device with low on resistance and method for fabricating the same
    Patent number: 9099554
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device include: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material.
    Type: Grant
    Filed: November 14, 2013
    Date of Patent: August 4, 2015
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: SooChang Kang, YoungJae Kim
  • Semiconductor device having a trench whose upper width is wider than a lower width thereof, and a method for fabricating the same
    Patent number: 9012985
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the upper trench part; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: April 21, 2015
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: SooChang Kang, YoungJae Kim
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20140252462
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the upper trench part; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material.
    Type: Application
    Filed: November 15, 2013
    Publication date: September 11, 2014
    Applicant: MagnaChip Semiconductor, Ltd.
    Inventors: SooChang KANG, YoungJae KIM
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20140252461
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device include: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material.
    Type: Application
    Filed: November 14, 2013
    Publication date: September 11, 2014
    Applicant: MagnaChip Semiconductor, Ltd.
    Inventors: SooChang KANG, YoungJae KIM