Abstract: A sensor for measuring gas permeability of a test material, comprising: an electrically conductive sensing element that comprises a water and/or oxygen sensitive material, wherein the reaction of said material with water or oxygen when the sensing element is contacted with water and/or oxygen results in a change in the electrical conductivity of the sensing element, and two electrodes electrically connected to the sensing element.

Abstract: A method of encapsulating a device is disclosed. Spacer particles are randomly located in a device region to prevent a cap mounted on the substrate from contacting the active components when pressure is applied to the cap, thereby protecting the active components from damage. The spacer particles comprise a base and an upper portion, the base being at least equal to or wider than the upper portion.

Abstract: A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. According to one aspect of the invention, a metal interlayer is deposited between the heterostructure and a dielectric layer such as silica. According to another aspect of the invention, an oxidized surface is provided between a dielectric layer and the heterostructure. The presence of the oxide layer improves stability and reproducibility in the post-annealing process. In a further aspect, the oxide layer may be provided between the interlayer and the heterostructure. In one embodiment of the invention, a photoresist mask with a specific pattern is deposited on the surface of the heterostructure so that the interlayer is deposited in an unmasked region whereon post-growth tuning results.

Abstract: A technique for growing a high quality gallium nitride layer on a uniform nano-patterned substrate is described. The invented technique is based on the transfer of ordered nano-patterns from a nano-template to the substrate, followed by the growth of gallium nitride on the nano-patterned substrate. The nano-patterned substrate serves as a buffer layer to reduce the stress and dislocations.

Abstract: A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.

Abstract: An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs.

Abstract: A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon, depositing a layer of at least a 3-component metal alloy comprising nickel on a surface of the substrate, and annealing the alloy and the substrate. The annealing temperature is less than 1000° C. The 3-component metal alloy can include Ni, Ti and Pt.

Abstract: An Organic Light Emitting Diode (OLED) which is adapted to inhibit the formation and growth of non-emissive areas known as “dark spots.” The OLED comprises an anode disposed on a substrate, a cathode, an electroluminescent (EL) layer disposed between the anode and the cathode and a hole transport layer disposed between the anode and the EL layer. The OLED has one or more dielectric organic barrier layers disposed between one or more of the OLED's layers. These barrier layers are made from an organic polymer and are adapted to resist permeation by oxygen and moisture and to inhibit metal migration.

Abstract: A contact pressure sensor (10) and method for manufacturing a contact pressure sensor for detecting contact pressure between two surfaces is disclosed. The contact pressure sensor disclosed comprises a substrate (40) for supporting the sensor and a contact pressure sensitive layer (26) sensitive to pressure applied to the contact pressure sensor. The method disclosed also comprises transferring a process post structure (8) that is formed on a first process support substrate (20) from the first process support substrate to a second contact pressure sensor support substrate (40).

Abstract: Embodiments of methods of fabricating protected contact plugs include forming an electrically insulating layer having a contact hole therein, on a semiconductor substrate and then forming an electrically conductive lower barrier layer that lines at least an upper portion of a sidewall of the contact hole. This lower barrier layer may comprise titanium nitride (TiN). A step is also performed to form an electrically conductive contact plug that extends in the contact hole, is electrically coupled to the lower barrier layer and protrudes above the electrically insulating layer. The contact plug may comprise tungsten (W). An electrically conductive upper barrier layer is then formed that extends on a protruded upper surface of the contact plug and on a surface of the lower barrier layer.