Patents by Inventor Soo Gil Kim

Soo Gil Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190319070
    Abstract: A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.
    Type: Application
    Filed: June 27, 2019
    Publication date: October 17, 2019
    Inventors: Beom Yong KIM, Soo Gil KIM
  • Publication number: 20190320095
    Abstract: A camera module includes : a housing in which a lens barrel is accommodated; a circuit board fixedly mounted on a lower portion of the housing; and a guide member guiding a fixing position of the housing fixed to the circuit board, wherein the guide member includes a solder ball, formed on the circuit board to protrude in an upward optical axis direction and a guide groove, provided as a groove recessed in the upward optical axis direction in a lower end portion of the housing and into which the solder ball is fitted.
    Type: Application
    Filed: April 16, 2018
    Publication date: October 17, 2019
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sang Jin KIM, Soo Gil SIN, Young Rok PARK
  • Patent number: 10418635
    Abstract: An electrolytic copper foil for a lithium secondary battery, which is applied as a negative electrode current collector of a lithium secondary battery, wherein after a thermal treatment at 300° C. for 30 minutes, the electrolytic copper foil for a lithium secondary battery has an elongation of 5% to 30%.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: September 17, 2019
    Assignee: KCF TECHNOLOGIES CO., LTD.
    Inventors: Seung-Min Kim, Soo-Yeol Kim, Dae-Young Kim, Jeong-Gil Lee
  • Patent number: 10381407
    Abstract: A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: August 13, 2019
    Assignee: SK hynix Inc.
    Inventors: Beom Yong Kim, Soo Gil Kim
  • Publication number: 20190213480
    Abstract: Provided is a method of providing a shared neural model by a question-answering system, the method including: learning a shared neural model on the basis of initial model learning data; providing a plurality of user terminals with the shared neural model upon completing the learning of the shared neural model; upon the user terminal updating the shared neural model to a personalized neural model, collecting the updated personalized neural model; updating the shared neural model on the basis of the collected personalized neural model; and providing the updated shared neural model to the plurality of user terminals.
    Type: Application
    Filed: January 11, 2019
    Publication date: July 11, 2019
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Joon Ho LIM, Mi Ran CHOI, Hyun Ki KIM, Min Ho KIM, Ji Hee RYU, Kyung Man BAE, Yong Jin BAE, Ji Hyun WANG, Hyung Jik LEE, Soo Jong LIM, Myung Gil JANG, Jeong HEO
  • Publication number: 20190166071
    Abstract: A chatbot system and method conversing with other chatbots in place of a user. The chatbot system and method understand the purpose of conversation of a user, select chatbots to which the purpose of the user is to be transferred, converse with the selected chatbots in place of the user, and present the user with a result of conversation undertaken. The chatbot system converses with provider chatbots provided by property and service providers. The chatbot system includes a consumer chatbot that understands a purpose of conversation of a user, converses with the provider chatbots in place of the user, and provides a result of the conversation to the user.
    Type: Application
    Filed: September 6, 2018
    Publication date: May 30, 2019
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Joon Ho LIM, Hyun Ki KIM, Min Ho KIM, Ji Hee RYU, Kyung Man BAE, Yong Jin BAE, Ji Hyun WANG, Hyung Jik LEE, Soo Jong LIM, Myung Gil JANG, Mi Ran CHOI, Jeong HEO
  • Patent number: 10283709
    Abstract: In an embodiment, a substrate that includes a cell region and a dummy region is provided. Lower interconnection structures are formed in the cell region and the dummy region. One or more first multilayered structure patterns are formed in the cell region and one or more second multilayered structure patterns in the dummy region over the lower interconnection structures. The first multilayered structure patterns and second multilayered structure patterns extend in a first direction. Each of the second multilayered structure patterns includes an etch target layer. An insulating material layer is formed over the first multilayered structure patterns and the second multilayered structure patterns. An interlayer insulating layer that fills a space between two adjacent patterns of the first multilayered structure patterns and second multilayered structure patterns is formed by planarizing the insulating material layer. The etch target layer in each of the second multilayered structure patterns is removed.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: May 7, 2019
    Assignee: SK HYNIX INC.
    Inventors: Young Seok Ko, Soo Gil Kim, Joo Young Moon
  • Patent number: 10263184
    Abstract: A switching device includes a first switching element having a snap-back behavior characteristic, an output voltage of the first switching element decreasing when an input current increases from a turn-on threshold current of the first switching element. The switching device further includes a second switching element having a continuous-resistance behavior characteristic, an output voltage of the second switching element increasing when the input current increases from a turn-on threshold current of the second switching element. The turn-on threshold current of the first switching element is lower than the turn-on threshold current of the second switching element.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: April 16, 2019
    Assignee: SK hynix Inc.
    Inventors: Tae Jung Ha, Soo Gil Kim
  • Publication number: 20190074436
    Abstract: A switching device includes a first switching element having a snap-back behavior characteristic, an output voltage of the first switching element decreasing when an input current increases from a turn-on threshold current of the first switching element. The switching device further includes a second switching element having a continuous-resistance behavior characteristic, an output voltage of the second switching element increasing when the input current increases from a turn-on threshold current of the second switching element. The turn-on threshold current of the first switching element is lower than the turn-on threshold current of the second switching element.
    Type: Application
    Filed: May 11, 2018
    Publication date: March 7, 2019
    Inventors: Tae Jung HA, Soo Gil KIM
  • Patent number: 10217797
    Abstract: A switching device includes a first electrode, a switching layer having a non-memory characteristic, and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. The second atom forms a trap site trapping a conductive carrier in the switching layer when a voltage having an absolute value that is smaller than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes. The second atom forms a moving path through which the conductive carrier moves between the first electrode and the second electrode when a voltage having an absolute value that is greater than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: February 26, 2019
    Assignee: SK HYNIX INC.
    Inventors: Beom Yong Kim, Soo Gil Kim
  • Publication number: 20180315922
    Abstract: In an embodiment, a substrate that includes a cell region and a dummy region is provided. Lower interconnection structures are formed in the cell region and the dummy region. One or more first multilayered structure patterns are formed in the cell region and one or more second multilayered structure patterns in the dummy region over the lower interconnection structures. The first multilayered structure patterns and second multilayered structure patterns extend in a first direction. Each of the second multilayered structure patterns includes an etch target layer. An insulating material layer is formed over the first multilayered structure patterns and the second multilayered structure patterns. An interlayer insulating layer that fills a space between two adjacent patterns of the first multilayered structure patterns and second multilayered structure patterns is formed by planarizing the insulating material layer. The etch target layer in each of the second multilayered structure patterns is removed.
    Type: Application
    Filed: November 28, 2017
    Publication date: November 1, 2018
    Inventors: Young Seok KO, Soo Gil KIM, Joo Young MOON
  • Patent number: 9917250
    Abstract: A switching device includes a first electrode and a second electrode that are disposed over a substrate, and an electrolyte layer disposed between the first electrode and the second electrode and including a porous oxide. The switching device performs threshold switching operation on the basis of oxidation-reduction reactions of metal ions that are provided from the first electrode or the second electrode to the electrolyte layer.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: March 13, 2018
    Assignee: SK HYNIX INC.
    Inventors: Beom Yong Kim, Soo Gil Kim, Won Ki Ju
  • Publication number: 20180061889
    Abstract: A switching device includes a first electrode, a switching layer having a non-memory characteristic, and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. The second atom forms a trap site trapping a conductive carrier in the switching layer when a voltage having an absolute value that is smaller than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes. The second atom forms a moving path through which the conductive carrier moves between the first electrode and the second electrode when a voltage having an absolute value that is greater than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes.
    Type: Application
    Filed: October 20, 2017
    Publication date: March 1, 2018
    Inventors: Beom Yong KIM, Soo Gil KIM
  • Patent number: 9865341
    Abstract: An electronic device includes a semiconductor memory unit, which includes resistive memory cells; an access circuit to apply, during a write operation, a write voltage across a selected one of the resistive memory cells in a first or second direction; first switching units, each of which is disposed between the access circuit and a first end of a corresponding one of the resistive memory cells and turned on in response to a first voltage having a level higher than a predetermined level when the corresponding resistive memory cell is selected during the write operation; and second switching units, each of which is disposed between the access circuit and a second end of the corresponding resistive memory cell and turned on in response to a second voltage having a level equal to or lower than the predetermined level when the corresponding resistive memory cell is selected during the write operation.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: January 9, 2018
    Assignee: SK HYNIX INC.
    Inventors: Hyung-Dong Lee, Soo-Gil Kim
  • Publication number: 20170365640
    Abstract: A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.
    Type: Application
    Filed: February 14, 2017
    Publication date: December 21, 2017
    Inventors: Beom Yong KIM, Soo Gil KIM
  • Patent number: 9825092
    Abstract: A switching device includes a first electrode, a switching layer and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. A valence of the first atom and a valence of the second atom are different from each other.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: November 21, 2017
    Assignee: SK HYNIX INC.
    Inventors: Beom Yong Kim, Soo Gil Kim
  • Publication number: 20170213958
    Abstract: A switching device includes a first electrode and a second electrode that are disposed over a substrate, and an electrolyte layer disposed between the first electrode and the second electrode and including a porous oxide. The switching device performs threshold switching operation on the basis of oxidation-reduction reactions of metal ions that are provided from the first electrode or the second electrode to the electrolyte layer.
    Type: Application
    Filed: July 8, 2016
    Publication date: July 27, 2017
    Inventors: Beom Yong KIM, Soo Gil KIM, Won Ki JU
  • Publication number: 20170170235
    Abstract: A switching device includes a first electrode, a switching layer and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. A valence of the first atom and a valence of the second atom are different from each other.
    Type: Application
    Filed: May 13, 2016
    Publication date: June 15, 2017
    Inventors: Beom Yong KIM, Soo Gil KIM
  • Publication number: 20160307625
    Abstract: An electronic device includes a semiconductor memory unit, which includes resistive memory cells; an access circuit to apply, during a write operation, a write voltage across a selected one of the resistive memory cells in a first or second direction; first switching units, each of which is disposed between the access circuit and a first end of a corresponding one of the resistive memory cells and turned on in response to a first voltage having a level higher than a predetermined level when the corresponding resistive memory cell is selected during the write operation; and second switching units, each of which is disposed between the access circuit and a second end of the corresponding resistive memory cell and turned on in response to a second voltage having a level equal to or lower than the predetermined level when the corresponding resistive memory cell is selected during the write operation.
    Type: Application
    Filed: October 7, 2015
    Publication date: October 20, 2016
    Inventors: Hyung-Dong LEE, Soo-Gil KIM
  • Patent number: 9312479
    Abstract: The present invention relates to a variable resistance memory device and a method for forming the same. A variable resistance memory device according to the present invention includes a first electrode; a second electrode spaced apart from the first electrode; a resistance variable layer and a metal-insulator transition layer provided between the first electrode and the second electrode; and a heat barrier layer provided (i) between the first electrode and the metal-insulator transition layer, (ii) between the metal-insulator transition layer and the resistance variable layer, or (iii) between the second electrode and the metal-insulator transition layer. The present invention prevents dissipation of heat generated in the metal-insulator transition layer using a thermal boundary resistance (TBR) phenomenon, and thus current and voltage to operate the variable resistance memory device can be reduced.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: April 12, 2016
    Assignee: SK HYNIX INC.
    Inventor: Soo Gil Kim