Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: The purpose of the present invention is to provide a steel material and a manufacturing method for the same, wherein the steel material has excellent strength, elongation, and impact toughness as well as excellent inside quality and wear resistance. According to the present invention, provided are a steel material having excellent wear resistance and a manufacturing method for the same, wherein. the steel material contains, in weight, 0.55-1.4% carbon (C), 12-23% manganese (Mn), 5% or less (excluding 0%) chromium (Cr), 5% or less (excluding 0%) copper (Cu), 0.5% or less (excluding 0%) Al, 1.0% or less (excluding 0%) Si, 0.02% or less (including 0%) S, 0.04% or less (including 0%) phosphor (P), and the balance Fe and unavoidable impurities, and has a microstructure comprising, in area, 10% or less (including 0%) carbide and the balance austenite.

Abstract: A lamination tape is disclosed which includes a base film with an adhesive layer on one side wherein the coefficient of thermal expansion (CTE) of the adhesive layer is adapted so as to reduce warpage of a semiconductor die when the lamination tape is attached to the passive side of the semiconductor die.

Abstract: Integrated circuits and methods for making integrated circuits having a base layer, a side substrate, a circuit substrate and a connection. A bottom face of the base layer is disposed on the side substrate. The side substrate includes a first contact field, at least a second contact field, and a signal line. The first contact field is arranged on the bottom face in an area of an opening of the base layer, the second contact field is arranged on another face of the side substrate, and the signal line connects the first contact field to the second contact field. The circuit substrate is disposed on the base layer and alongside the side substrate. The connection connects the circuit substrate to the second contact field of the side substrate.

Abstract: A die configuration includes a die having an active side and an inactive side being opposed to the active side. The inactive side is connected to a heat sink. The connecting members can be provided on the active side.

Abstract: A die configuration includes a die having an active side and an inactive side being opposed to the active side. The inactive side is connected to a heat sink. The connecting members can be provided on the active side.