Patents by Inventor Soo-hwan Jeong
Soo-hwan Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11420543Abstract: The present disclosure provides a seat track mechanism installed beneath a vehicle seat in order to move the vehicle seat in the forward and backward directions. A monotrack mechanism, to which a monopost structure and a single rail structure are applied, is installed at the bottom of the seat. The seat track mechanism includes a structure for hook-engaging lower and upper rails constituting the mono track mechanism by hook guides, thereby being capable of securing sufficient strength upon head-on or rear-end collision. The present disclosure also provides a seat track mechanism for a vehicle including a locking mechanism capable of enhancing stability of a passenger through structural reinforcement given at the bottom of the vehicle when it is necessary to ensure safety of the passenger in a situation such as collision or sudden stop or the like.Type: GrantFiled: August 2, 2019Date of Patent: August 23, 2022Assignee: HYUNDAI TRANSYS INC.Inventors: Soo Hwan Jeong, Jae Sung Lee, Jae Sang Lim
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Patent number: 11001169Abstract: A seat swivel mechanism secured under a vehicle seat and configured to swivel the vehicle seat in a motor-driven manner is described. The seat swivel mechanism includes a lower plate, which is a fixed support body for supporting the swivel motion, and an upper plate rotatably secured on the lower plate. The upper plate and the lower plate are configured to rotate relative to each other, and the vehicle seat swivels due to the relative rotation of the upper plate and the lower plate. A driving motor is secured to any one of the upper plate and the lower plate, and an internal gear, which is secured to any one of the upper plate and the lower plate, is rotated by the driving motor, thereby swiveling the vehicle seat.Type: GrantFiled: August 2, 2019Date of Patent: May 11, 2021Assignee: HYUNDAI TRANSYS INC.Inventors: Jae Yong Jang, Jae Sung Lee, Soo Hwan Jeong
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Publication number: 20200198499Abstract: A seat swivel mechanism secured under a vehicle seat and configured to swivel the vehicle seat in a motor-driven manner is described. The seat swivel mechanism includes a lower plate, which is a fixed support body for supporting the swivel motion, and an upper plate rotatably secured on the lower plate. The upper plate and the lower plate are configured to rotate relative to each other, and the vehicle seat swivels due to the relative rotation of the upper plate and the lower plate. A driving motor is secured to any one of the upper plate and the lower plate, and an internal gear, which is secured to any one of the upper plate and the lower plate, is rotated by the driving motor, thereby swiveling the vehicle seat.Type: ApplicationFiled: August 2, 2019Publication date: June 25, 2020Inventors: Jae Yong JANG, Jae Sung LEE, Soo Hwan JEONG
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Publication number: 20200198502Abstract: The present disclosure provides a seat track mechanism installed beneath a vehicle seat in order to move the vehicle seat in the forward and backward directions. A monotrack mechanism, to which a monopost structure and a single rail structure are applied, is installed at the bottom of the seat. The seat track mechanism includes a structure for hook-engaging lower and upper rails constituting the mono track mechanism by hook guides, thereby being capable of securing sufficient strength upon head-on or rear-end collision. The present disclosure also provides a seat track mechanism for a vehicle including a locking mechanism capable of enhancing stability of a passenger through structural reinforcement given at the bottom of the vehicle when it is necessary to ensure safety of the passenger in a situation such as collision or sudden stop or the like.Type: ApplicationFiled: August 2, 2019Publication date: June 25, 2020Inventors: Soo Hwan JEONG, Jae Sung LEE, Jae Sang LIM
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Patent number: 8221716Abstract: A method of synthesizing carbon nanotubes including forming a solution including an organometallic compound containing catalyst particles and a solvent, adding at least one support to the solution, wherein the carbon nanotubes are synthesized on a surface of the at least one support, and applying radiation to the solution to which the at least one support is added.Type: GrantFiled: November 18, 2005Date of Patent: July 17, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Soo-Hwan Jeong, Wan-Jun Park, Jong-Bong Park, Ju-Hye Ko
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Patent number: 7901586Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.Type: GrantFiled: July 30, 2007Date of Patent: March 8, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: In-kyeong Yoo, Soo-hwan Jeong, Sun-ae Seo, In-sook Kim
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Publication number: 20100272900Abstract: Provided is a method of fabricating ZnO nanowires using a sonicator. The method includes (a) forming a Zn layer on a surface of a substrate, (b) patterning the Zn layer, and (c) forming ZnO nanowires on the Zn layer by immersing the substrate, on which the Zn layer is patterned in a mixed solution made of a solution containing Zn and a solution ionizing Zn, in a sonicator. ZnO nanowires may be formed at a predetermined location at room temperature according to the present invention.Type: ApplicationFiled: January 3, 2008Publication date: October 28, 2010Inventors: Wan-jun Park, Soo-hwan Jeong
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Patent number: 7554255Abstract: An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.Type: GrantFiled: July 30, 2003Date of Patent: June 30, 2009Assignee: Postech FoundationInventors: Kun-Hong Lee, Sun-Kyu Hwang, Soo-Hwan Jeong
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Publication number: 20080257861Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.Type: ApplicationFiled: July 30, 2007Publication date: October 23, 2008Applicant: Samsung Electronics Co., Ltd.Inventors: In-kyeong Yoo, Soo-hwan Jeong, Sun-ae Seo, In-sook Kim
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Patent number: 7282446Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.Type: GrantFiled: April 7, 2004Date of Patent: October 16, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: In-kyeong Yoo, Soo-hwan Jeong, Sun-ae Seo, In-sook Kim
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Publication number: 20070207619Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.Type: ApplicationFiled: April 7, 2004Publication date: September 6, 2007Applicant: Samsung Electronics Co., Ltd.Inventors: In-kyeong Yoo, Soo-hwan Jeong, Sun-ae Seo, In-sook Kim
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Publication number: 20060239892Abstract: A method of synthesizing carbon nanotubes including forming a solution including an organometallic compound containing catalyst particles and a solvent, adding at least one support to the solution, wherein the carbon nanotubes are synthesized on a surface of the at least one support, and applying radiation to the solution to which the at least one support is added.Type: ApplicationFiled: November 18, 2005Publication date: October 26, 2006Inventors: Soo-Hwan Jeong, Wan-Jun Park, Jong-Bong Park, Ju-Hye Ko
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Patent number: 7115306Abstract: Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.Type: GrantFiled: January 18, 2005Date of Patent: October 3, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Soo-hwan Jeong, Wan-jun Park, In-kyeong Yoo, Ju-hye Ko
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Publication number: 20060196772Abstract: Provided are a microfluidic device for separating polarizable analytes via dielectrophoresis, the device including: a microchannel including a membrane having nano- to micro-sized pores; at lest two electrodes generating a spaciously non-uniform electric field in the nano- to micro-sized pores when an AC voltage is applied; and a power source applying the AC voltage to the electrodes, and a method of separating polarizable target materials using the device.Type: ApplicationFiled: February 9, 2006Publication date: September 7, 2006Inventors: Sook-young Kim, Yoon-kyoung Cho, Soo-hwan Jeong, Jin-tae Kim, Chin-sung Park
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Publication number: 20060180845Abstract: A memory device with a silicon rich oxide layer and a method of manufacturing the same are provided. The memory device with a silicon rich oxide layer may include a semiconductor substrate, source/drain regions formed on the semiconductor substrate, and a gate structure formed on the semiconductor substrate. The gate structure may contact with the source/drain regions and may include a silicon oxide layer with a silicon content greater than that of a silicon oxide layer (SiO2).Type: ApplicationFiled: February 10, 2006Publication date: August 17, 2006Inventors: Young-Kwan Cha, In-Kyeong Yoo, Soo-Hwan Jeong
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Patent number: 7091054Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.Type: GrantFiled: February 15, 2005Date of Patent: August 15, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: In-kyeong Yoo, Chang-wook Moon, Soo-hwan Jeong, Dong-wook Kim
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Patent number: 6998162Abstract: An optical recording medium having a phase transition material film and a method of manufacturing the optical recording medium are provided. In the method, first, a phase transition material film, a sacrificial film, and a metal film are sequentially stacked on a substrate. Next, the metal film is anodized to form a metal oxide film having a plurality of holes, and portions of the sacrificial film exposed through the holes are anode-oxidized to form oxide films. Thereafter, the phase transition material film is patterned by removing the metal oxide film and by etching the sacrificial film and the phase transition material film using the oxide films as a mask. Then, the oxide films are removed from the sacrificial film, and an upper insulation film, a reflection film, and a protection film are deposited on the upper surface of the patterned phase transition material film.Type: GrantFiled: May 20, 2003Date of Patent: February 14, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: In-kyeong Yoo, Soo-hwan Jeong, In-sook Kim
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Publication number: 20050285502Abstract: An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.Type: ApplicationFiled: July 30, 2003Publication date: December 29, 2005Applicant: POSTECH FOUNDATIONInventors: Kun-Hong Lee, Sun-Kyu Hwang, Soo-Hwan Jeong
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Patent number: 6953946Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.Type: GrantFiled: October 1, 2003Date of Patent: October 11, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: In-kyeong Yoo, Chang-wook Moon, Soo-hwan Jeong, Dong-wook Kim
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Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots
Publication number: 20050202639Abstract: Provided is a method of manufacturing a memory device that comprises a gate including uniformly distributed silicon nano dots. The method includes forming a gate on a substrate, the gate including, stacked in sequence an insulating film, nano dot layers separated by a predetermined lateral distance, and a conductive film pattern, forming a source region and a drain region contacting the gate in the substrate, and forming first and second metal layers on the source region and the drain region, respectively.Type: ApplicationFiled: March 4, 2005Publication date: September 15, 2005Applicant: Samsung Electronics Co., LtdInventors: In-kyeong Yoo, Soo-hwan Jeong, Won-il Ryu