Abstract: An improved data transmission circuit for complementary metal oxide semiconductor (CMOS) dynamic random access memory devices having a data input buffer for converting transistor-transistor logic (TTL) input data signals to CMOS logic level true and complement data signals is described. The data transmission circuit includes a pair of transmission gates for transferring the true and complement data signals in a write cycle, a pair of inverting stages connected between respective ones of the transmission gates and true and complement input/output (I/O) bus lines for inverting data signals from the transmission gates to provide the inverted data signals to true and complement I/O bus lines in the write cycle and an equalizing stage for precharging and equalizing true and complement I/O bus lines in a precharge cycle.

Abstract: A sensing detection circuit in a DRAM detects the sensing of data in a memory array. The circuit reduces the sensing access time significantly by detecting an output produced upon completion of the data sensing in the memory array which output is used to immediately initiate the next date operation without unnecessary delay.