Patents by Inventor Soo-Ik Jang

Soo-Ik Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming semiconductor devices with extended active regions
    Patent number: 7867841
    Abstract: A method of forming a semiconductor device can include forming a trench in a semiconductor substrate to define an active region. The trench is filled with a first device isolation layer. A portion of the first device isolation layer is etched to recess a top surface of the first device isolation layer below an adjacent top surface of the active region of the semiconductor substrate and to partially expose a sidewall of the active region. The exposed sidewall of the active region is epitaxially grown to form an extension portion of the active region that extends partially across the top surface of the first device isolation layer in the trench. A second device isolation layer is formed on the recessed first device isolation layer in the trench. The second device isolation layer is etched to expose a top surface of the extension portion of the active region and leave a portion of the second device isolation layer between extension portions of active regions on opposite sides of the trench.
    Type: Grant
    Filed: January 2, 2008
    Date of Patent: January 11, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Chan Lim, Byeong-Yun Nam, Soo-Ik Jang, In-Soo Jung
  • SEMICONDUCTOR DEVICES WITH EXTENDED ACTIVE REGIONS AND METHODS OF FORMING THE SAME
    Publication number: 20080157262
    Abstract: A method of forming a semiconductor device can include forming a trench in a semiconductor substrate to define an active region. The trench is filled with a first device isolation layer. A portion of the first device isolation layer is etched to recess a top surface of the first device isolation layer below an adjacent top surface of the active region of the semiconductor substrate and to partially expose a sidewall of the active region. The exposed sidewall of the active region is epitaxially grown to form an extension portion of the active region that extends partially across the top surface of the first device isolation layer in the trench. A second device isolation layer is formed on the recessed first device isolation layer in the trench. The second device isolation layer is etched to expose a top surface of the extension portion of the active region and leave a portion of the second device isolation layer between extension portions of active regions on opposite sides of the trench.
    Type: Application
    Filed: January 2, 2008
    Publication date: July 3, 2008
    Inventors: Dong-Chan Lim, Byeong-Yun Nam, Soo-Ik Jang, In-Soo Jung