Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: A display device includes a substrate, a low refractive index layer disposed on the substrate, a first capping layer disposed on the low refractive index layer and directly contacting an upper surface of the low refractive index layer, a second capping layer disposed on the first capping layer, and a wavelength conversion layer disposed on the second capping layer and having a refractive index higher than a refractive index of the low refractive index layer, wherein a nitrogen atomic ratio of the first capping layer is different from a nitrogen atomic ratio of the second capping layer.

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: A display device includes a first substrate having, defined thereon, an active region and a nonactive region around the active region; an active element layer on a first surface of the first substrate and in the active region; a second substrate facing the first surface of the first substrate, the second substrate being on the active element layer; and an antireflection member on a first surface of the second substrate that faces the first substrate, the antireflection member being spaced apart from the active element layer, wherein the antireflection member includes first, second, third, and fourth refractive layers sequentially stacked from the first surface of the second substrate, refractive indexes of the first and third refractive layers are greater than refractive indexes of the second and fourth refractive layers, and the fourth refractive layer includes aluminum, indium, and/or gallium.

Abstract: A resin composition according to an exemplary embodiment of the present disclosure includes a first polyol represented by Chemical Formula 1, a second polyol represented by Chemical Formula 2, and a polyisocyanate, wherein the first polyol and the second polyol have a linear structure without a side chain. each of Y1 to Y4 is H or OH—, at least one of Y1 and Y2 is OH—, at least one of Y3 and Y4 is OH—, each of X1 to X3 is independently a C1-C20 alkyl group, the alkyl group includes or does not include an unsaturated bond, —CH2— in the alkyl group may be substituted or unsubstituted with —CHOH—, and each of n and m is independently 1 to 200.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Abstract: A cover window protective film includes a base layer, and a first protective layer disposed on the base layer, where the first protective layer includes a lower surface adjacent to the base layer and an upper surface opposite to the lower surface, and the first protective layer includes a fluorine-based compound, and has an atomic ratio of fluorine (F) gradually increasing from the lower surface toward the upper surface.

Abstract: Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. Hie first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

Abstract: A resin composition according to an exemplary embodiment of the present disclosure includes a first polyol represented by Chemical Formula 1, a second polyol represented by Chemical Formula 2, and a polyisocyanate, wherein the first polyol and the second polyol have a linear structure without a side chain. each of Y1 to Y4 is H or OH—, at least one of Y1 and Y2 is OH—, at least one of Y3 and Y4 is OH—, each of X1 to X3 is independently a C1-C20 alkyl group, the alkyl group includes or does not include an unsaturated bond, —CH2— in the alkyl group may be substituted or unsubstituted with —CHOH—, and each of n and m is independently 1 to 200.

Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

Abstract: Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.

Abstract: A wiring structure includes a substrate, a copper oxide layer having 16˜39 at % oxygen on the substrate and a copper layer on the copper oxide layer. The copper oxide layer has a thickness of 10-1000 ? and the copper layer has a thickness of 300-8000 ?. The copper layer and the copper oxide layer further have an alloy element less than 10 wt % and the alloy element is selected from the group of Ag, Ni, Mg, Zr, N.

Abstract: The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.