Abstract: Disclosed herein are an ultrasonic imaging apparatus of successively displaying a plurality of slice images of an object at predetermined frame rate, and a control method of the ultrasonic imaging apparatus. According to an embodiment of the ultrasonic imaging apparatus, the ultrasonic imaging apparatus may include: an image processor configured to extract a target in an object based on volume data of the object; a controller configured to determine a region of interest in the object, based on the extracted target; and a display unit configured to successively display a plurality of slice images of the object, including the region of interest.

Abstract: Disclosed herein are an ultrasonic imaging apparatus of successively displaying a plurality of slice images of an object at predetermined frame rate, and a control method of the ultrasonic imaging apparatus. According to an embodiment of the ultrasonic imaging apparatus, the ultrasonic imaging apparatus may include: an image processor configured to extract a target in an object based on volume data of the object; a controller configured to determine a region of interest in the object, based on the extracted target; and a display unit configured to successively display a plurality of slice images of the object, including the region of interest.

Abstract: A display apparatus is disclosed. The display apparatus includes a flexible display panel and a shape deforming/maintaining unit. The flexible display panel is configured to operate in a flat mode and in a curved mode. The shape deforming/maintaining unit is on a surface of the flexible display panel. The shape deforming/maintaining unit is configured to deform a shape of the flexible display panel during switching between the flat mode and the curved mode, and to maintain rigidity of the flexible display panel after switching to the flat mode or to the curved mode.

Abstract: A display apparatus is disclosed. The display apparatus includes a flexible display panel and a shape deforming/maintaining unit. The flexible display panel is configured to operate in a flat mode and in a curved mode. The shape deforming/maintaining unit is on a surface of the flexible display panel. The shape deforming/maintaining unit is configured to deform a shape of the flexible display panel during switching between the flat mode and the curved mode, and to maintain rigidity of the flexible display panel after switching to the flat mode or to the curved mode.

Abstract: In a method of inputting/outputting data in a semiconductor memory device, first data and second data are buffered and outputted to a first output node and a second output node, respectively, in a normal mode. In a test mode, the first data is buffered through a first transmission line and a second transmission line and outputted to the first output node and the second output node in response to at least one control signal. Also, in the test mode, the second data is buffered through the first transmission line and the second transmission line and outputted to the first output node and the second output node in response to the at least one control signal. Accordingly, test time may be reduced, and variations of operation characteristics caused by merging the data pins may also be reduced.

Abstract: In a method of inputting/outputting data in a semiconductor memory device, first data and second data are buffered and outputted to a first output node and a second output node, respectively, in a normal mode. In a test mode, the first data is buffered through a first transmission line and a second transmission line and outputted to the first output node and the second output node in response to at least one control signal. Also, in the test mode, the second data is buffered through the first transmission line and the second transmission line and outputted to the first output node and the second output node in response to the at least one control signal. Accordingly, test time may be reduced, and variations of operation characteristics caused by merging the data pins may also be reduced.

Abstract: A wafer burn-in test circuit of a semiconductor memory device having a plurality of memory cells arranged in a row/column matrix, is provided, including:a sub word line driver connected to first and second word line groups each connected to true cells and complement cells forming the memory cells, and responding to a predecoded low address; and first and second power lines respectively supplying power to the corresponding first and second power line groups by a switching operation of the sub word line driver, wherein a ground power source is applied to the first and second power lines during a normal operation, and the ground power source and a step-up power source are alternately applied to the first and second power lines during a wafer burn-in test operation.

Abstract: A data output buffer control circuit for a semiconductor memory device assures a column address setup time and a valid data setup time in EDO mode by eliminating short glitches in the data output buffer. The circuit assures the column address setup time by disabling the data output buffer for a predetermined period of time after an address transition, regardless of the state of a column address strobe signal. The circuit assures the setup time for valid data by sensing when the address is set up relative to when the column address strobe signal is activated, and then enabling the data output buffer so as to maintain invalid data in the data output buffer long enough to prevent a short glitch in the data output buffer if the column address is set up before the column address strobe signal is activated.

Abstract: A bidirectional input/output buffer operates in a current mode to increase the data transfer rate between devices connected by a bidirectional transmission line. The buffer includes an output current source for generating an output current responsive to a data output signal. The output current is combined with an output current indicative of a data input signal received from another device over a transmission line, thereby forming a mixed current signal. The data input signal is restored from the mixed signal by a restoring circuit that compares the mixed signal to a reference current that depends on the value of the data output signal. The restoring circuit includes a current mirror and a reference current source that generates a reference current in response to the data output signal.

Abstract: A wafer burn-in test circuit of a semiconductor memory device having a plurality of memory cells arranged in a row/column matrix, is provided, including: a sub word line driver connected to first and second word line groups each connected to true cells and complement cells forming the memory cells, and responding to a predecoded low address; and first and second power lines respectively supplying power to the corresponding first and second power line groups by a switching operation of the sub word line driver, wherein a ground power source is applied to the first and second power lines during a normal operation, and the ground power source and a step-up power source are alternately applied to the first and second power lines during a wafer burn-in test operation.

Abstract: A circuit for generating an internal source voltage signal responsive to an external source voltage signal in a semiconductor memory device prevents malfunction and extends the lifetime of the device by clamping the internal source signal if the device is in a normal operating mode when the external source signal is in a stress operating range. When the device is placed in a test mode, the circuit allows the internal source signal to increase in proportion to the level of the external source signal when the external source signal is in a stress operating range. The circuit includes in internal source voltage generator, which always clamps the internal source signal when the external source signal is in a normal operating range, and a pull-up unit which is activated in response to a control signal. The control signal is enabled when the device is placed in a test mode by combining external timing signals.

Abstract: A circuit for testing a semiconductor memory device comprises a latency controller for controlling the latency of the external clock signal, an internal column address generator for generating a column address signal in the memory device, and a mode register for generating a mode signal. The circuit for testing semiconductor memory devices also includes a column address decoder for decoding the output address signal of the internal column address generator, a memory cell for reading or writing data, an input/output control unit for controlling the data input/output of the memory cell according to the output signal of the latency controller, a data input buffer, and a data output buffer. Further provided are a frequency multiplier for generating an internal clock signal having a frequency "n" times the frequency of the external clock signal. By providing the above-mentioned improvements, the conventional test equipment can be used to test high frequency memory devices.

Abstract: A semiconductor memory device stably operates over a wide range of the power supply voltage by including a power supply voltage level detector for generating detecting signals according to predetermined levels of the power supply voltage and an oscillator for generating a frequency-controlled oscillation pulse whose frequency is changeable according to the detecting signals. Thus, a boosting ratio of a boosting circuit, the refresh period of a refresh circuit and the substrate voltage of a substrate voltage generator can be adaptively changeable according to the variation of the power supply voltage.

Abstract: Self repairing integrated circuit memory devices include the plurality of normal memory cells, plurality of spare memory cells and a plurality of spare substituting circuits. A spare substituting circuit is responsive to a defective normal memory cell address which is programmed therein, to substitute at least one spare memory cell for at least one defective normal memory cell which is located at the defective normal memory cell address which is programmed therein. A sequential spare substituting circuit selector is connected to the spare substituting circuits and is responsive to a defect indication signal, to sequentially select a respective one of the spare circuits for programming with sequential ones of the defective normal memory cell addresses. An alarm signal is generated if all of the spare substituting circuits have been used. If a defect is present in at least two normal memory cells in different rows and the same column, a spare column is substituted rather than two spare rows.

Abstract: The time required for testing high-density semiconductor memory devices is reduced by circuits and methodology for rapidly writing test data bits into the memory array. A common word line enable signal is arranged to turn on all of the word lines in the array simultaneously. Test data bits are applied to the array by gating them onto the I/O lines so that separate test bit lines are not required. A fast test enable signal gates the test bits onto the I/O lines in all columns of the array simultaneously, so that all of the memory cells receive test bits at one time. The new circuitry has the further advantages of reduced area and capacitance, the latter further contributing to reducing the test data write time.

Abstract: A semiconductor memory device including at least two boosting voltage circuits which independently boost a supply voltage power level to a boosted voltage power level. A plurality of memory cell arrays each input the supply voltage power and store information therein. Driving circuits are connected to each of the memory cell arrays and supply the boosted voltage power to the memory cell arrays, the number of driving circuits preferably corresponding to the number of the boosting voltage circuits.

Abstract: A memory module having parity and capable of performing a read-modify-write (RMW) operation is provided. The memory module has data input and output pins for processing a plurality of data bits and a parity bit and is comprised of one semiconductor memory device which processes the parity bit and a plurality of semiconductor memory devices which each process a plurality of data bits. All of the memory devices include at least one data input/output pin for receiving and supplying data and at least one control pin for receiving a control signal. The memory module according to the present invention is simply constructed so as to yield high integration in a semiconductor integrated circuit, and is capable of high-speed applications.

Abstract: A semiconductor memory device stably operates over a wide range of the power supply voltage by including a power supply voltage level detector for generating detecting signals according to predetermined levels of the power supply voltage and an oscillator for generating a frequency-controlled oscillation pulse whose frequency is changeable according to the detecting signals. Thus, a boosting ratio of a boosting circuit, the refresh period of a refresh circuit and the substrate voltage of a substrate voltage generator can be adaptively changeable according to the variation of the power supply voltage.

Abstract: A semiconductor memory device stably operates over a wide range of the power supply voltage by including a power supply voltage level detector for generating detecting signals according to predetermined levels of the power supply voltage and an oscillator for generating a frequency-controlled oscillation pulse whose frequency is changeable according to the detecting signals. Thus, a boosting ratio of a boosting circuit, the refresh period of a refresh circuit and the substrate voltage of a substrate voltage generator can be adaptively changeable according to the variation of the power supply voltage.

Abstract: The present invention relates to a semiconductor memory device, and more particularly to a dynamic random access memory for accomplishing high speed data access by supplying a plurality of row address strobe signals to a chip. A plurality of row address strobe signals are supplied to a plurality of pins, and each row address strobe signal is sequentially supplied with an active signal during a data access operation. Therefore, data in a plurality of memory cell arrays is accessed during one access cycle time. Thus, since a large number of random data are provided, the data access time decreases and the performance of a system can be greatly improved.