Patents by Inventor Soo-Jeong Choi
Soo-Jeong Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240080320Abstract: A server according to an embodiment includes a processor configured to receive a friend add request for a target account from a user terminal accessed with a user account; based on one of the user account and the target account being a protected account, transmit an approval request for the friend add request to a protector account connected to the protected account; and based on receiving a reply to the approval request from the protector terminal, add the target account to a friend list of the user account.Type: ApplicationFiled: April 27, 2023Publication date: March 7, 2024Inventors: You Jin KIM, Jung Woo CHOI, Jenog Ryeol CHOI, Joong Seon KIM, Hong Chan YUN, Ju Ho CHUNG, Do Hyun YOUN, Hyung Min KIM, Hyun Ok CHOI, Chun Ho KIM, Soo Beom KIM, Min Jeong KIM, Chang Oh HEO, Eun Soo HEO
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Publication number: 20240026039Abstract: The provided is a hydrogel that utilizes the naturally occurring substance pectin to exhibit an equivalent or greater effect. Specifically, the present application is intended to provide a hydrogel or a patch which is stable, has strong adhesive strength, is advantageous for drug delivery, can be used for sustained treatment, has extremely low cytotoxicity, and is unlikely to induce an immune response, and thus can be used on various body parts, in particular the oral cavity. In addition, the provide is a hydrogel patch which employs a freeze-drying method prior to crosslinking, and thus exhibits superior adhesion to patches employing a post-crosslinking freeze-drying method.Type: ApplicationFiled: September 27, 2023Publication date: January 25, 2024Inventors: Seung Woo CHO, Soo Jeong CHOI, Yong Soon HWANG, Ji Hoon JEON
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Publication number: 20230201109Abstract: The present disclosure relates to a hydrogel patch for preventing or treating cartilage or bone diseases, including: a hydrogel patch containing a biocompatible polymer functionalized with a phenol group; and a drug for treating cartilage or bone diseases loaded in the hydrogel patch.Type: ApplicationFiled: March 1, 2023Publication date: June 29, 2023Inventors: Seung Woo CHO, Soo Jeong CHOI, Eun Je JEON, Jong Seung LEE
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Publication number: 20230061058Abstract: The present disclosure relates to a hydrogel including chondroitin sulfate functionalized with a phenol derivative, and a composition for cell culture, a composition for promoting cell differentiation, a composition for drug delivery, a composition for promoting tissue regeneration and a composition for tissue transplant, each including the hydrogel. The hydrogel can be advantageously used in the field of tissue engineering.Type: ApplicationFiled: February 15, 2021Publication date: March 2, 2023Inventors: Seung Woo CHO, In Sik YUN, Ji Soo SHIN, Soo Jeong CHOI
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Publication number: 20220280442Abstract: The present disclosure relates to a catechol group- or pyrogallol group-functionalized biocompatible polymer hydrogel patch having excellent biocompatibility and tissue adhesion, and uses for drug delivery, cell transplantation and tissue regeneration using the same. The biocompatible polymer hydrogel patch functionalized with the catechol group or pyrogallol group of the present disclosure has remarkably excellent mechanical properties and tissue adhesion compared with a solution-based bulk hydrogel. Therefore, it can load cells and a drug in vivo for a long time and also safely and efficiently deliver the cells and the drug to a target site.Type: ApplicationFiled: October 17, 2019Publication date: September 8, 2022Inventors: Seung Woo CHO, Ji Soo SHIN, Soo Jeong CHOI, Dong Hoon CHOI
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Patent number: 10385011Abstract: Disclosed are a novel benzoic acid amide derivative compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a prodrug thereof, a hydrate thereof, or a solvate thereof. The novel compound and the like inhibit melanin production, prevent tyrosinase activity, and have an excellent skin whitening effect.Type: GrantFiled: March 30, 2016Date of Patent: August 20, 2019Assignee: AMOREPACIFIC CORPORATIONInventors: Yung Hyup Joo, Soo Jeong Choi, Heung Soo Baek, Chang Seok Lee, Jeong Hwan Kim, Yongjin Kim, Hong-Ju Shin, Ho Sik Rho, Song Seok Shin, Jon Hwan Lee
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Publication number: 20180065922Abstract: Disclosed are a novel benzoic acid amide derivative compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a prodrug thereof, a hydrate thereof, or a solvate thereof. The novel compound and the like inhibit melanin production, prevent tyrosinase activity, and have an excellent skin whitening effect.Type: ApplicationFiled: March 30, 2016Publication date: March 8, 2018Inventors: Yung Hyup JOO, Soo Jeong CHOI, Heung Soo BAEK, Chang Seok LEE, Jeong Hwan KIM, Yongjin KIM, Hong-Ju SHIN, Ho Sik RHO, Song Seok SHIN, Jon Hwan LEE
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Patent number: 9748438Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.Type: GrantFiled: June 23, 2016Date of Patent: August 29, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Sub Kim, Yeon Woo Seo, Dong Gun Lee, Byung Kyu Chung, Dae Myung Chun, Soo Jeong Choi
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Patent number: 9508898Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.Type: GrantFiled: August 27, 2015Date of Patent: November 29, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Byung Kyu Chung, Jung Sub Kim, Soo Jeong Choi, Yeon Woo Seo, Dong Gun Lee
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Patent number: 9478702Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.Type: GrantFiled: October 13, 2014Date of Patent: October 25, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Won Hwang, Je Won Kim, Il Ho Ahn, Soo Jeong Choi
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Publication number: 20160300978Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.Type: ApplicationFiled: June 23, 2016Publication date: October 13, 2016Applicant: Samsung Electronics Co., Ltd.Inventors: Jung Sub KIM, Yeon Woo SEO, Dong Gun LEE, Byung Kyu CHUNG, Dae Myung CHUN, Soo Jeong CHOI
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Patent number: 9406839Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.Type: GrantFiled: August 24, 2015Date of Patent: August 2, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Sub Kim, Yeon Woo Seo, Dong Gun Lee, Byung Kyu Chung, Dae Myung Chun, Soo Jeong Choi
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Patent number: 9362448Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.Type: GrantFiled: April 14, 2015Date of Patent: June 7, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Soo Jeong Choi, Jung Sub Kim, Byung Kyu Chung, Yeon Woo Seo, Dong Gun Lee
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Publication number: 20160072007Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.Type: ApplicationFiled: April 14, 2015Publication date: March 10, 2016Inventors: Soo Jeong CHOI, Jung Sub KIM, Byung Kyu CHUNG, Yeon Woo SEO, Dong Gun LEE
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Publication number: 20160064608Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.Type: ApplicationFiled: August 27, 2015Publication date: March 3, 2016Inventors: Byung Kyu CHUNG, Jung Sub KIM, Soo Jeong CHOI, Yeon Woo SEO, Dong Gun LEE
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Publication number: 20160056331Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.Type: ApplicationFiled: August 24, 2015Publication date: February 25, 2016Inventors: Jung Sub KIM, Yeon Woo SEO, Dong Gun LEE, Byung Kyu CHUNG, Dae Myung CHUN, Soo Jeong CHOI
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Patent number: 9254251Abstract: The present invention relates to a novel benzoic acid amide derivative compound, isomers thereof, pharmaceutically acceptable salts thereof, prodrugs thereof, hydrates thereof, or solvates thereof. The novel compound has excellent skin whitening effects.Type: GrantFiled: August 3, 2012Date of Patent: February 9, 2016Assignee: AMOREPACIFIC CORPORATIONInventors: Yung Hyup Joo, Heung Soo Baek, Chang Seok Lee, Soo Jeong Choi, Ho Sik Rho, Mi Young Park, Song Seok Shin, Kyung Min Lim, Young Ho Park
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Publication number: 20150221823Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.Type: ApplicationFiled: October 13, 2014Publication date: August 6, 2015Inventors: Sung Won HWANG, Je Won KIM, Il Ho AHN, Soo Jeong CHOI
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Patent number: D1025167Type: GrantFiled: April 28, 2023Date of Patent: April 30, 2024Inventors: Han Wool Choi, Jun Hwan Park, Seok Young Youn, Hun Keon Ko, Ho Seong Kang, Hyeon Jeong An, Gyu Jong Hwang, Soo Kyoung Kang, Dong Jin Hyun, Geun Sang Yu
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Patent number: D1025168Type: GrantFiled: April 28, 2023Date of Patent: April 30, 2024Inventors: Han Wool Choi, Jun Hwan Park, Seok Young Youn, Hun Keon Ko, Ho Seong Kang, Hyeon Jeong An, Gyu Jong Hwang, Soo Kyoung Kang, Dong Jin Hyun, Geun Sang Yu