Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0?x?1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1<(A2+A3).

Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0?x?1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

Abstract: A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1<(A2+A3).

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1<(A2+A3).

Abstract: A case including a case main body, a matrix including a semiconductor nanocrystal, the matrix disposed in the case main body, and a sealant disposed on the case main body, wherein the sealant has a gas permeability of about 1 cubic centimeter at standard temperature and pressure per centimeter per meter squared per day per atmosphere or less and a tensile strength of about 5 megaPascals or more, and wherein the semiconductor nanocrystal is a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV element, a Group IV compound, or a combination thereof.

Abstract: A nanoparticle complex, including a semiconductor nanocrystal; and a metal complex ligand on the surface of the semiconductor nanocrystal. The nanoparticle complex may further include a polymer shell contacting the metal complex ligand.

Abstract: A light emitting device including: a blue light source; a phosphor; and a semiconductor nanocrystal, and emits white light having a R1-R8 average color rendering index (“CRI”) of greater than or equal to about 90, and a R9 red color rendering index (R9) of greater than or equal to about 90.

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1<(A2+A3).

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1<(A2+A3)??Equation 1.

Abstract: A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (—COO?) bindable to a surface of the semiconductor nanocrystal, and a metal cation bindable to a carboxylate anion group of the plurality of carboxylate anion groups.

Abstract: Disclosed is an optoelectronic device that includes a light source, an emission layer disposed on the light source including a light emitting particle dispersed in a matrix polymer, and a polymer film disposed on the emission layer, the polymer film including a polymerized polymer of a first monomer including at least two thiol (—SH) groups and a second monomer including at least two carbon-carbon unsaturated bond-containing groups at a terminal end.

Abstract: A light emitting diode that includes: a light source; a buffer layer disposed on the light source and including a first matrix polymer; a polymer layer disposed on the buffer layer and including an organic/inorganic hybrid polymer; and an emission layer disposed on the polymer layer and including a light emitting particle dispersed in a second matrix polymer, wherein one selected from the light source, the buffer layer, the emission layer, and a combination thereof includes one selected from sulfurous component, a nitrogenous component, and a combination thereof.

Abstract: A light emitting device including: a blue light source; a phosphor; and a semiconductor nanocrystal, and emits white light having a R1-R8 average color rendering index (“CRI”) of greater than or equal to about 90, and a R9 red color rendering index (R9) of greater than or equal to about 90.

Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0?x?1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1<(A2+A3).

Abstract: A white light emitting diode and a liquid crystal display device that realizes images using the white light are provided. The white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the LED light source into white light. The light conversion layer includes green light emitting semiconductor nanocrystal and red light emitting semiconductor nanocrystal. A light emitting peak wavelength of the green light emitting semiconductor nanocrystal is about 520 nanometer (nm) or more, a light emitting peak wavelength of the red semiconductor nanocrystal is about 610 nanometer (nm) or more, and full width at half maximums (FWHMs) of light emitting peaks of the green and red light emitting semiconductor nanocrystals are about 45 nanometer (nm) or less.

Abstract: A case including a case main body, a matrix including a semiconductor nanocrystal, the matrix disposed in the case main body, and a sealant disposed on the case main body, wherein the sealant has a gas permeability of about 1 cubic centimeter at standard temperature and pressure per centimeter per meter squared per day per atmosphere or less and a tensile strength of about 5 megaPascals or more, and wherein the semiconductor nanocrystal is a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV element, a Group IV compound, or a combination thereof.

Abstract: Disclosed is an optoelectronic device that includes a light source, an emission layer disposed on the light source including a light emitting particle dispersed in a matrix polymer, and a polymer film disposed on the emission layer, the polymer film including a polymerized polymer of a first monomer including at least two thiol (—SH) groups and a second monomer including at least two carbon-carbon unsaturated bond-containing groups at a terminal end.