Abstract: Provided is a semiconductor device, which includes: a drift region of a first conductivity type, a base region of a second conductivity type on the drift region, a source region of a first conductivity type on the base region, a gate electrode disposed on the base region via an insulating film, an auxiliary trench provided on the base region, and a polysilicon electrode of a first conductivity type, electrically connected to the base region and the source region, and provided in the auxiliary trench.

Abstract: Synchronizing a shutter control signal of an optical sensor device of a video gaming system with a horizontal retrace signal generated by a game console of the system such that the frame rate of the optical sensor device is synchronized to the horizontal retrace signal. Synchronizing the frame rate to the horizontal retrace signal eliminates or reduces the occurrence of random stripes in the images captured by the optical sensor device, commonly known as flickering.

Abstract: The present invention provides a vacuum processing apparatus that allows easy exchange of processing chambers. A vacuum processing apparatus of the present invention has a processing chamber and a carrying-in-and-out chamber. The carrying-in-and-out chamber is fixed and located at a position above the processing chamber. The processing chamber can be lowered by a vertically moving mechanism. Therefore, the processing chamber is separated from the carrying-in-and-out chamber by lowering the processing chamber. A conveying means is connected to the processing chamber so that it is possible to easily convey the processing chamber after being removed from the carrying-in-and-out chamber. The operation for exchanging the processing chambers can be simpler than in the conventional systems.

Abstract: The invention comprises a method of dual oxide gate formation comprising the steps of forming a first gate oxide and forming a second gate oxide using in-situ steam generation oxidation.