Patents by Inventor Soo-Min Kim

Soo-Min Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8981357
    Abstract: A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent electrode having the doped graphene containing the hydrophobic organic layer may be usefully applied in solar cells or display devices.
    Type: Grant
    Filed: March 20, 2013
    Date of Patent: March 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seon-mi Yoon, Hyeon-jin Shin, Jae-young Choi, Won-mook Choi, Soo-min Kim, Young-hee Lee
  • Publication number: 20140110670
    Abstract: A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent electrode having the doped graphene containing the hydrophobic organic layer may be usefully applied in solar cells or display devices.
    Type: Application
    Filed: March 20, 2013
    Publication date: April 24, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seon-mi YOON, Hyeon-jin SHIN, Jae-young CHOI, Won-mook CHOI, Soo-min KIM, Young-hee LEE
  • Publication number: 20120228557
    Abstract: A compound containing at least two pyridinium derivatives in its molecular structure and being in a reduced form thereof may be used as a CNT n-doping material. The compound may donate electrons spontaneously to CNTs to n-dope the CNTs, while being oxidized into its stable state. An n-doped CNT that is doped with the CNT n-doping material may maintain a stable n-doped state for a long time without being dedoped even in the air and/or water. Further, the n-doped state may be easily controlled when using the CNT n-doping material.
    Type: Application
    Filed: May 18, 2012
    Publication date: September 13, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon Jin SHIN, Young HEE LEE, Jaeyoung CHOI, Seonmi YOON, Soo Min KIM
  • Patent number: 8221715
    Abstract: A compound containing at least two pyridinium derivatives in its molecular structure and being in a reduced form thereof may be used as a CNT n-doping material. The compound may donate electrons spontaneously to CNTs to n-dope the CNTs, while being oxidized into its stable state. An n-doped CNT that is doped with the CNT n-doping material may maintain a stable n-doped state for a long time without being dedoped even in the air and/or water. Further, the n-doped state may be easily controlled when using the CNT n-doping material.
    Type: Grant
    Filed: May 7, 2009
    Date of Patent: July 17, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeon Jin Shin, Young Hee Lee, Jaeyoung Choi, Seonmi Yoon, Soo Min Kim
  • Publication number: 20100279001
    Abstract: Disclosed are a carbon nano-tube (CNT) thin film treated with chemical having an electron withdrawing functional group and a manufacturing method thereof. Specifically, the CNT thin film comprises a CNT composition to be applied on a plastic substrate. The CNT composition comprises a CNT; and chemical connected to the CNT and having an electron withdrawing functional group. In addition, the method for manufacturing a CNT thin film comprises steps of preparing a CNT; treating the CNT with chemical having an electron withdrawing functional group; mixing the CNT treated with the chemical with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; and forming a CNT thin film with the CNT dispersed solution. According to the CNT thin film and the manufacturing method thereof, a resistance of an electrode is decreased to improve the electric conductivity of the electrode.
    Type: Application
    Filed: February 14, 2008
    Publication date: November 4, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon Jin Shin, Seonmi Yoon, Jaeyoung Choi, Young Hee Lee, Seong Jae Choi, Soo Min Kim
  • Publication number: 20100133480
    Abstract: A compound containing at least two pyridinium derivatives in its molecular structure and being in a reduced form thereof may be used as a CNT n-doping material. The compound may donate electrons spontaneously to CNTs to n-dope the CNTs, while being oxidized into its stable state. An n-doped CNT that is doped with the CNT n-doping material may maintain a stable n-doped state for a long time without being dedoped even in the air and/or water. Further, the n-doped state may be easily controlled when using the CNT n-doping material.
    Type: Application
    Filed: May 7, 2009
    Publication date: June 3, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon Jin SHIN, Young HEE LEE, Jaeyoung CHOI, Seonmi YOON, Soo Min KIM
  • Patent number: 7401494
    Abstract: A valve test apparatus, a solenoid valve test method and a venturi valve test method are provided. The valve test apparatus may include a gas supply unit, a solenoid valve holding unit, a first measurement unit, a venturi valve holding unit, a second measurement unit, a timer unit and/or a power supply unit. The solenoid valve holding unit may be connected to one end of the gas supply unit. The first measurement unit may be connected to the solenoid valve holding unit. The venturi valve holding unit, on which a venturi valve to be tested may be arranged. The venturi valve may be selectively connected to the solenoid valve holding unit together with the first measurement unit. The second measurement unit may be connected to the venturi valve. The timer unit may measure a time interval between when the solenoid valve is activated and when a measured value by the first measurement unit or second measurement unit is equivalent to a desired value.
    Type: Grant
    Filed: July 21, 2006
    Date of Patent: July 22, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-Min Kim, Ho-Sung Eum, Jang-Wan Cho
  • Publication number: 20070028665
    Abstract: A valve test apparatus, a solenoid valve test method and a venturi valve test method are provided. The valve test apparatus may include a gas supply unit, a solenoid valve holding unit, a first measurement unit, a venturi valve holding unit, a second measurement unit, a timer unit and/or a power supply unit. The solenoid valve holding unit may be connected to one end of the gas supply unit. The first measurement unit may be connected to the solenoid valve holding unit. The venturi valve holding unit, on which a venturi valve to be tested may be arranged. The venturi valve may be selectively connected to the solenoid valve holding unit together with the first measurement unit. The second measurement unit may be connected to the venturi valve. The timer unit may measure a time interval between when the solenoid valve is activated and when a measured value by the first measurement unit or second measurement unit is equivalent to a desired value.
    Type: Application
    Filed: July 21, 2006
    Publication date: February 8, 2007
    Inventors: Soo-Min Kim, Ho-Sung Eum, Jang-Wan Cho