Abstract: There is provided a cooperative driving control method based on a vehicle security status. The cooperative driving method according to an embodiment includes: identifying a security status of a cooperative driving target vehicle; determining a cooperative driving strategy according to the identified security status; and controlling driving according to the determined cooperative driving strategy. Accordingly, cooperative driving may be performed or excluded based on a security status of a target vehicle, so that an accident may be prevented from being caused by cooperative driving with a problematic vehicle, and safety of a driver and an occupant may be guaranteed.

Abstract: The present invention relates to a pharmaceutical composition containing ?-lapachone as an active ingredient for prevention or treatment of cholestatic liver disease, and can provide agents for effectively preventing and treating cholestatic liver disease.

Abstract: A cleaning method of an apparatus for manufacturing a semiconductor device includes providing a first cleaning gas and a second cleaning gas into a chamber, and forming a mixture of the first cleaning gas and the second cleaning gas, wherein the first cleaning gas includes a fluorocarbon gas and an oxygen gas and the second cleaning gas includes nitrogen, activating the mixture of the first cleaning gas and the second cleaning gas by a high frequency power, and exhausting residues cleaned by the activated mixture and remaining gases.

Abstract: Disclosed is a wafer susceptor which includes: a ceramic body; a RF electrode mounted within the ceramic body; a heater mounted within the ceramic body and spaced apart from the RF electrode by a predetermined distance to be disposed below the RF electrode; and an RF shield of a metal material, the RF shield being electrically grounded and mounted within the ceramic body, the RF shield being disposed between the RF electrode and the heater without being in contact with either the heater or the RF electrode. In case where an RF power is applied to the RF electrode, it is possible to minimize an influence of an RF noise on the heater 24. Accordingly, since the RF power can be applied to the susceptor while heating the susceptor at a high temperature, it is possible to deposit a high-density thin film and also control properties of the thin film such as stress and step coverage. Further, the invention may take the stabilization of the power system.

Abstract: The present invention provides a thin film deposition apparatus that prevent a wafer from the thermal budget so as to form a thin film without any damages. The thin film deposition apparatus includes a chamber where a wafer is loaded; a gas supplier containing a plurality of gases, the gas supplier connected with the chamber through at least a gas inflow pipe so as to supplying the plurality of gases into the chamber; an airtight reaction room in the chamber where the plurality of gases are reaction with one another so as to form a thin film on the wafer; and a gas pre-treatment device in the gas supplier, the gas pre-treatment device thermal-treating at least one of the plurality of gases at a temperature in the range of more than 300 to less than 2000 degrees centigrade; wherein the gas pre-treatment device is connected to at least a connecting pipe.

Abstract: A chemical vapor deposition apparatus comprising: a reaction chamber for defining an enclosed space; a pedestal arranged within the reaction chamber on which a substrate is settled; heater means arranged within the pedestal for heating the substrate; a gas inlet for introducing gas into the reaction chamber; a gas outlet for exhausting gas from the reaction chamber; and a gas injector extended from the end of the gas inlet, wherein the gas injector has a hollow side wall so that a heat exchanging medium can flow through the side wall, and inlet and outlet ports arranged in the outside of the sidewall, each of the inlet and outlet ports communicating with the inside of the side wall. Here, the outlet port is arranged higher than the inlet port.

Abstract: In the formation of a contact hole within highly limited area, the size of the contact hole does not vary. For achieving such purpose, after a first polysilicon pattern is formed, a concave portion is formed by isotropically etching the predetermined depth of an insulating layer. A second polysilicon spacer is then formed at the sidewall of the first polysilicon pattern and the concave portion. Using the etching process employing the first polysilicon pattern and the second polysilicon spacer as a mask, the contact hole is formed by etching the insulating layer.