Abstract: In a described example, an apparatus includes a transistor formed on a semiconductor substrate, the transistor including: a transistor gate and an extended drain between the transistor gate and a transistor drain contact; a transistor source contact coupled to a source contact probe pad; a first dielectric layer covering the semiconductor substrate and the transistor gate; a source field plate on the first dielectric layer and coupled to a source field plate probe pad spaced from and electrically isolated from the source contact probe pad; and the source field plate capacitively coupled through the first dielectric layer to a first portion of the extended drain.

Abstract: A High Electron Mobility Transistor (HEMT) includes an active layer on a substrate, and a Group IIIA-N barrier layer on the active layer. An isolation region is through the barrier layer to provide at least one isolated active area including the barrier layer on the active layer. A gate is over the barrier layer. A drain includes at least one drain finger including a fingertip having a drain contact extending into the barrier layer to contact to the active layer and a source having a source contact extending into the barrier layer to contact to the active layer. The source forms a loop that encircles the drain. The isolation region includes a portion positioned between the source and drain contact so that there is a conduction barrier in a length direction between the drain contact of the fingertip and the source.

Abstract: In some examples, a gallium nitride (GaN)-based transistor, comprises a substrate; a GaN layer supported by the substrate; an aluminum nitride gallium (AlGaN) layer supported by the GaN layer; a p-doped GaN structure supported by the AlGaN layer; and multiple p-doped GaN blocks supported by the AlGaN layer, each of the multiple p-doped GaN blocks physically separated from the remaining multiple p-doped GaN blocks, wherein first and second contours of a two-dimensional electron gas (2DEG) of the GaN-based transistor are at an interface of the AlGaN and GaN layers.

Abstract: One example provides an enhancement-mode High Electron Mobility Transistor (HEMT) includes a substrate, a Group IIIA-N active layer over the substrate, a Group IIIA-N barrier layer over the active layer, and at least one isolation region through the barrier layer to provide an isolated active area having the barrier layer on the active layer. A gate stack is located between source and drain contacts to the active layer. A tunnel diode in the gate stack includes an n-GaN layer on an InGaN layer on a p-GaN layer located on the barrier layer.

Abstract: A High Electron Mobility Transistor (HEMT) includes an active layer on a substrate, and a Group IIIA-N barrier layer on the active layer. An isolation region is through the barrier layer to provide at least one isolated active area including the barrier layer on the active layer. A gate is over the barrier layer. A drain includes at least one drain finger including a fingertip having a drain contact extending into the barrier layer to contact to the active layer and a source having a source contact extending into the barrier layer to contact to the active layer. The source forms a loop that encircles the drain. The isolation region includes a portion positioned between the source and drain contact so that there is a conduction barrier in a length direction between the drain contact of the fingertip and the source.

Abstract: An evaluation system of block copolymer patterns includes a supplier, a plurality of analyzers, and a homopolymer interference remover. The supplier provides a sample including a block copolymer and a homopolymer. The analyzers measure a molecular weight of the block copolymer in the sample, measure a preliminary block ratio, the preliminary block ratio corresponding to a total ratio in the sample of each block in the block copolymer, and selectively measure a ratio of the homopolymer in the sample. The homopolymer interference remover subtracts the ratio of the homopolymer from the preliminary block ratio.

Abstract: One example provides an enhancement-mode High Electron Mobility Transistor (HEMT) includes a substrate, a Group IIIA-N active layer over the substrate, a Group IIIA-N barrier layer over the active layer, and at least one isolation region through the barrier layer to provide an isolated active area having the barrier layer on the active layer. A gate stack is located between source and drain contacts to the active layer. A tunnel diode in the gate stack includes an n-GaN layer on an InGaN layer on a p-GaN layer located on the barrier layer.

Abstract: An enhancement-mode High Electron Mobility Transistor (HEMT) includes a substrate, a Group IIIA-N active layer on the substrate, a Group IIIA-N barrier layer on the active layer, and at least one isolation region through the barrier layer to provide an isolated active area having the barrier layer on the active layer. A p-GaN layer is on the barrier layer. A tunnel diode in the gate stack includes an n-GaN layer on an InGaN layer on the p-GaN layer. A gate electrode is over the n-GaN layer. A drain having a drain contact is on the barrier layer to provide contact to the active layer, and a source having a source contact is on the barrier layer provides contact to the active layer. The tunnel diode provides a gate contact to eliminate the need to form a gate contact directly to the p-GaN layer.

Abstract: A functional food packaging material and a method for making the same, where the food packaging material includes: a first film comprising synthetic resin, calcium carbonate powder coated with zinc oxide, boehmite powder coated with titanium dioxide, and hydroxyapatite powder coated with iron; a second film laminated on the first film and comprising powdery particles that contain synthetic resin, loess, elvan, kaolin, zeolite, feldspar, black mica, jade, selenium and charcoal; and a third film laminated on the second film and made of synthetic film. The first film has a higher porosity than that of the second film, and the second film has a higher porosity than that of the third film. The food packaging material has improved antimicrobial activity and maximizes food storage stability. The amount of functional powder added is minimized so that the formability of the packaging material is not adversely affected.

Abstract: Provided is a method for detecting impurities in ammonium hydroxide. The method for detecting impurities in ammonium hydroxide includes preparing a potassium permanganate solution, preparing ammonium hydroxide, and adding the potassium permanganate solution several times to the ammonium hydroxide so as to detect impurities in the ammonium hydroxide. Potassium permanganate contained in the potassium permanganate solution is added for each time in the range of 0.0001 mol to 0.01 mol per 1 g of ammonia contained in the ammonium hydroxide.

Abstract: In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.

Abstract: Disclosed herein are a high-temperature structure for measuring properties of a curved thermoelectric device, which is capable of precisely measuring the properties of a medium-temperature curved thermoelectric device that is applied to a tube-type waste heat source and is used in research, and a system and a method for measuring the properties using the same. The high-temperature structure may include a plurality of rod-shaped cartridge heaters, and a heating element having a surface that is a curved surface coming into contact with a lower end of the curved thermoelectric device, having a plurality of holes for accommodating the plurality of cartridge heaters, and directly heating the lower end of the curved thermoelectric device.

Abstract: An enhancement-mode High Electron Mobility Transistor (HEMT) includes a substrate, a Group IIIA-N active layer on the substrate, a Group IIIA-N barrier layer on the active layer, and at least one isolation region through the barrier layer to provide an isolated active area having the barrier layer on the active layer. A p-GaN layer is on the barrier layer. A tunnel diode in the gate stack includes an n-GaN layer on an InGaN layer on the p-GaN layer. A gate electrode is over the n-GaN layer. A drain having a drain contact is on the barrier layer to provide contact to the active layer, and a source having a source contact is on the barrier layer provides contact to the active layer. The tunnel diode provides a gate contact to eliminate the need to form a gate contact directly to the p-GaN layer.

Abstract: A High Electron Mobility Transistor (HEMT) includes an active layer on a substrate, and a Group IIIA-N barrier layer on the active layer. An isolation region is through the barrier layer to provide at least one isolated active area including the barrier layer on the active layer. A gate is over the barrier layer. A drain includes at least one drain finger including a fingertip having a drain contact extending into the barrier layer to contact to the active layer and a source having a source contact extending into the barrier layer to contact to the active layer. The source forms a loop that encircles the drain. The isolation region includes a portion positioned between the source and drain contact so that there is a conduction barrier in a length direction between the drain contact of the fingertip and the source.

Abstract: Disclosed are a wire and a method for manufacturing the same. The method includes heating a solvent, adding a capping agent to the solvent, and forming a metallic wire by adding a metallic compound to the solvent. The solvent includes a first solvent having a first reduction power and a second solvent having a second reduction power greater than the first reduction power. The capping agent includes a first capping agent containing a polymer having a first molecular weight, and a second capping agent containing a polymer having a second molecular weight greater than the first molecular weight.

Abstract: A functional food packaging material and a method for making the same, where the food packaging material includes: a first film comprising synthetic resin, calcium carbonate powder coated with zinc oxide, boehmite powder coated with titanium dioxide, and hydroxyapatite powder coated with iron; a second film laminated on the first film and comprising powdery particles that contain synthetic resin, loess, elvan, kaolin, zeolite, feldspar, black mica, jade, selenium and charcoal; and a third film laminated on the second film and made of synthetic film. The first film has a higher porosity than that of the second film, and the second film has a higher porosity than that of the third film. The food packaging material has improved antimicrobial activity and maximizes food storage stability. The amount of functional powder added is minimized so that the formability of the packaging material is not adversely affected.

Abstract: A thermal desorption system including a chamber including a space in which a substrate is heated; a flow compartment within the chamber, the flow compartment providing a separate gas flow space within the chamber; a substrate support that supports the substrate within the flow compartment; a heater that heats the substrate within the flow compartment; and a gas pipe that introduces a carrier gas into the flow compartment and discharges the carrier gas from the flow compartment.

Abstract: A High Electron Mobility Transistor (HEMT) includes an active layer on a substrate, and a Group IIIA-N barrier layer on the active layer. An isolation region is through the barrier layer to provide at least one isolated active area including the barrier layer on the active layer. A gate is over the barrier layer. A drain includes at least one drain finger including a fingertip having a drain contact extending into the barrier layer to contact to the active layer and a source having a source contact extending into the barrier layer to contact to the active layer. The source forms a loop that encircles the drain. The isolation region includes a portion positioned between the source and drain contact so that there is a conduction barrier in a length direction between the drain contact of the fingertip and the source.

Abstract: Provided is a method for detecting impurities in ammonium hydroxide. The method for detecting impurities in ammonium hydroxide includes preparing a potassium permanganate solution, preparing ammonium hydroxide, and adding the potassium permanganate solution several times to the ammonium hydroxide so as to detect impurities in the ammonium hydroxide. Potassium permanganate contained in the potassium permanganate solution is added for each time in the range of 0.0001 mol to 0.01 mol per 1 g of ammonia contained in the ammonium hydroxide.

Abstract: Disclosed herein are a high-temperature structure for measuring properties of a curved thermoelectric device, which is capable of precisely measuring the properties of a medium-temperature curved thermoelectric device that is applied to a tube-type waste heat source and is used in research, and a system and a method for measuring the properties using the same. The high-temperature structure may include a plurality of rod-shaped cartridge heaters, and a heating element having a surface that is a curved surface coming into contact with a lower end of the curved thermoelectric device, having a plurality of holes for accommodating the plurality of cartridge heaters, and directly heating the lower end of the curved thermoelectric device.