Patents by Inventor Soo-young Moon
Soo-young Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10533613Abstract: A joint includes an outer race, a first inner race installed in the outer race and a second inner race installed in the first inner race. The outer race includes an inner surface and first grooves formed on the inner surface. The first inner race includes an outer surface, an inner surface and second grooves formed on the outer surface, and a plurality of third grooves formed on the inner surface. First balls are disposed between the first grooves and the second grooves for transmitting rotation of the first inner race to the outer race. The second inner race includes an outer surface and fourth grooves formed on the outer surface. Second balls disposed between the third grooves and the fourth grooves for transmitting rotation of the second inner race to the first inner race.Type: GrantFiled: May 26, 2017Date of Patent: January 14, 2020Assignee: HYUNDAI WIA CORPORATIONInventor: Soo Young Moon
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Publication number: 20170343050Abstract: A ball-type constant velocity joint may include: an outer race part installed on a shaft and having a plurality of first grooves formed axially in the inner surface thereof; a first inner race part including: a first inner race rotatably installed in the outer race part, having a plurality of second grooves formed on the outer surface thereof, and having a plurality of third grooves formed axially on the inner surface thereof; and a plurality of first balls installed between the first grooves and the second grooves; and a second inner race part including: a second inner race rotatably installed in the first inner race, and having a plurality of fourth grooves formed on the outer surface thereof and facing the third grooves; and a plurality of second balls installed between the third grooves and the fourth grooves.Type: ApplicationFiled: May 26, 2017Publication date: November 30, 2017Inventor: SOO YOUNG MOON
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Patent number: 8680559Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad.Type: GrantFiled: November 8, 2010Date of Patent: March 25, 2014Assignee: Seoul Opto Device Co., Ltd.Inventors: Kyoung Wan Kim, Soo Young Moon, Kyu Ho Lee, Yeo Jin Yoon, Jeong Hee Yang, Won Cheol Seo
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Patent number: 8609449Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: October 25, 2012Date of Patent: December 17, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Patent number: 8329488Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: April 10, 2012Date of Patent: December 11, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Publication number: 20120202306Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: ApplicationFiled: April 10, 2012Publication date: August 9, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Shiro SAKAI, Hwa Mok KIM, Joon Hee LEE, Soo Young MOON, Kyoung Wan KIM
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Patent number: 8183075Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: July 21, 2011Date of Patent: May 22, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Publication number: 20120021546Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: ApplicationFiled: July 21, 2011Publication date: January 26, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Patent number: 8026119Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: August 26, 2010Date of Patent: September 27, 2011Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Publication number: 20110114990Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad.Type: ApplicationFiled: November 8, 2010Publication date: May 19, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Kyoung Wan KIM, Soo Young MOON, Kyu Ho LEE, Yeo Jin YOON, Jeong Hee YANG, Won Cheol SEO
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Publication number: 20110053303Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: ApplicationFiled: August 26, 2010Publication date: March 3, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Patent number: 6445125Abstract: Disclosed is a flat panel display and a method for manufacturing the same. The flat display has a first substrate and a second substrate sealed in a vacuum at a predetermined interval to form a cell gap and including a plurality of spacers interposed therebetween, the second substrate including a plurality of anode electrodes formed in a predetermined pattern on one side thereof and a phosphor layer formed on the pattern of the anode electrodes.Type: GrantFiled: March 30, 1999Date of Patent: September 3, 2002Assignee: Samsung Display Devices Co., Ltd.Inventors: Yang-woon Na, Sung-ho Jo, Soo-young Moon