Abstract: The present invention relates to a method for forming a storage node contact of a semiconductor device. The method includes the steps of: depositing sequentially a conductive layer, a nitride layer and a polysilicon layer on a substrate having an insulating structure and a conductive structure; etching selectively the polysilicon layer, the nitride layer and the conductive layer to form a plurality of conductive patterns with a stack structure of the conductive layer and a dual hard mask including the polysilicon layer and the nitride layer; forming an insulation layer along a profile containing the conductive patterns; and etching the insulation layer by using a line type photoresist pattern as an etch mask to form a contact hole exposing the conductive structure disposed between the neighboring conductive patterns.

Abstract: Disclosed is a method for fabricating a semiconductor device with a plurality of recessed channel regions. This method includes the steps of: forming a plurality of device isolation layers in a substrate; forming a hard mask nitride layer, a hard mask oxide layer and a hard mask polysilicon layer on the device isolation and the substrate, thereby obtaining a hard mask pattern; forming a plurality of trenches in the predetermined regions of the substrate with use of the hard mask pattern to expose a plurality of recessed channel regions; selectively removing the hard mask pattern; and forming a plurality of gate structures in the plurality of trenches.

Abstract: A benzobisazole polymer having repeating units of the formula: wherein Q is and wherein Z is —O—, —S— or —NH—. A new method for preparing 1,5-naphthalenedicarboxylic acid from 1,5-diaminonaphthalene under relatively mild conditions in good yields is also described.

Abstract: Disclosed is a method for fabricating a semiconductor device with a plurality of recessed channel regions. This method includes the steps of: forming a plurality of device isolation layers in a substrate; forming a hard mask nitride layer, a hard mask oxide layer and a hard mask polysilicon layer on the device isolation and the substrate, thereby obtaining a hard mask pattern; forming a plurality of trenches in the predetermined regions of the substrate with use of the hard mask pattern to expose a plurality of recessed channel regions; selectively removing the hard mask pattern; and forming a plurality of gate structures in the plurality of trenches.

Abstract: The present invention relates to a method for forming a storage node contact of a semiconductor device. The method includes the steps of: depositing sequentially a conductive layer, a nitride layer and a polysilicon layer on a substrate having an insulating structure and a conductive structure; etching selectively the polysilicon layer, the nitride layer and the conductive layer to form a plurality of conductive patterns with a stack structure of the conductive layer and a dual hard mask including the polysilicon layer and the nitride layer; forming an insulation layer along a profile containing the conductive patterns; and etching the insulation layer by using a line type photoresist pattern as an etch mask to form a contact hole exposing the conductive structure disposed between the neighboring conductive patterns.

Abstract: A method of manufacturing a flash memory cell is disclosed. The method comprises the steps of forming an oxide film on a semiconductor substrate in which a device separation film is formed and then patterning the oxide film to expose the semiconductor substrate at a portion in which a floating gate will be formed; sequentially forming a tunnel oxide film and a first polysilicon layer on the entire structure, and then flattening the first polysilicon layer until the tunnel oxide film is exposed to form a floating gate; etching the tunnel oxide film and the oxide film in the exposed portion to a given thickness and the forming a dielectric film on the entire structure; sequentially forming a second polysilicon layer, a tungsten silicide layer and a hard mask and then patterning them to form a control gate; and injecting impurity ions into the semiconductor substrate at the both sides of the floating gate to form a junction region.

Abstract: A method of manufacturing a flash memory cell is disclosed. The method comprises the steps of forming an oxide film on a semiconductor substrate in which a device separation film is formed and then patterning the oxide film to expose the semiconductor substrate at a portion in which a floating gate will be formed; sequentially forming a tunnel oxide film and a first polysilicon layer on the entire structure, and then flattening the first polysilicon layer until the tunnel oxide film is exposed to form a floating gate; etching the tunnel oxide film and the oxide film in the exposed portion to a given thickness and the forming a dielectric film on the entire structure; sequentially forming a second polysilicon layer, a tungsten silicide layer and a hard mask and then patterning them to form a control gate; and injecting impurity ions into the semiconductor substrate at the both sides of the floating gate to form a junction region.

Abstract: Disclosed is an automatically foldable support stand for a golf bag. The support stand includes a pair of legs and a V-shaped elastic rod adapted to move the legs between spread position and retracted position according to the movement of a bag body between its tiled position and its upright position. A free end of the elastic rod is engaged with an engagement groove of a base plate. An elasticity enforcing part integrally formed to the base plate is engaged with the elastic rod thereby substantially shortening a coincidence point of the V-shaped elastic rod. A guide shoe attached at a lower position of the golf bag penetrates through a guide block which is vertically extended from the base plate whereby a movement of the base plate is guided along a path controlled by the guide shoe.