Patents by Inventor Soo-Bang Kim

Soo-Bang Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240144578
    Abstract: Disclosed herein is a method for generating a texture map of a 3D mesh includes encoding a texture map of a 3D mesh, quantizing the encoded texture map, decoding the quantized texture map, performing rendering using the decoded texture map, and updating the texture map of the 3D mesh based on the value of a loss function.
    Type: Application
    Filed: February 24, 2023
    Publication date: May 2, 2024
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Soo-Woong KIM, Jung-Won KANG, Ji-Hoon DO, Gun BANG, Seong-Jun BAE, Jin-Ho LEE, Ha-Hyun LEE
  • Patent number: 8445357
    Abstract: Provided are a method of fabricating a semiconductor integrated circuit device and a semiconductor integrated circuit device fabricated using the method. The method includes: forming a mask film, which exposes a portion of a substrate, on the substrate; forming a first buried impurity layer, which contains impurities of a first conductivity type and of a first concentration, in a surface of the exposed portion of the substrate by using the mask film; removing the mask film; forming a second buried impurity layer, which contains impurities of a second conductivity type and of a second concentration, using blank implantation; and forming an epitaxial layer on the substrate having the first and second buried impurity layers, wherein the first concentration is higher than the second concentration.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: May 21, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-Don Kim, Eung-Kyu Lee, Sung-Ryoul Bae, Soo-Bang Kim, Dong-Eun Jang
  • Publication number: 20110241171
    Abstract: Provided are a method of fabricating a semiconductor integrated circuit device and a semiconductor integrated circuit device fabricated using the method. The method includes: forming a mask film, which exposes a portion of a substrate, on the substrate; forming a first buried impurity layer, which contains impurities of a first conductivity type and of a first concentration, in a surface of the exposed portion of the substrate by using the mask film; removing the mask film; forming a second buried impurity layer, which contains impurities of a second conductivity type and of a second concentration, using blank implantation; and forming an epitaxial layer on the substrate having the first and second buried impurity layers, wherein the first concentration is higher than the second concentration.
    Type: Application
    Filed: March 30, 2010
    Publication date: October 6, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong-Don Kim, Eung-Kyu Lee, Sung-Ryoul Bae, Soo-Bang Kim, Dong-Eun Jang