Abstract: A semiconductor apparatus includes a substrate, a first die, and a second die. The substrate includes first and second byte pads of a first channel and first and second byte pad of a second channel. First byte pads of the first die are respectively coupled to the first byte pads of the first channel, and second byte pads of the first die are respectively coupled to the second byte pads of the first channel. The second die, as disposed, is rotated by 180° with respect to the first die. First byte pads of the second die are respectively coupled to the second byte pads of the second channel, and second byte pads of the second die are respectively coupled to the first byte pads of the second channel.

Abstract: A device includes a section signal generation circuit configured to generate a section signal including bits activated during an operation section of each of internal operations included in a mode operation, and a mode command generation circuit configured to generate a mode command for performing the internal operations included in the mode operation from an oscillating signal, based on the section signal.

Abstract: A column control circuit may include a column control signal generation circuit and a column access block signal generation circuit. The column control signal generation circuit is configured to activate an input/output strobe signal when a column access block signal is deactivated. The column control signal generation circuit is configured to deactivate the input/output strobe signal when the column access block signal is activated. The column access block signal generation circuit is configured to activate the column access block signal when gap-less read commands may be inputted. The column access block signal generation circuit may deactivate the column access block signal during a period corresponding to an N-th read command among the gap-less read commands. N is an integer that is no less than 2.

Abstract: A device includes a section signal generation circuit configured to generate a section signal including bits activated during an operation section of each of internal operations included in a mode operation, and a mode command generation circuit configured to generate a mode command for performing the internal operations included in the mode operation from an oscillating signal, based on the section signal.

Abstract: A column control circuit may include a column control signal generation circuit and a column access block signal generation circuit. The column control signal generation circuit is configured to activate an input/output strobe signal when a column access block signal is deactivated. The column control signal generation circuit is configured to deactivate the input/output strobe signal when the column access block signal is activated. The column access block signal generation circuit is configured to activate the column access block signal when gap-less read commands may be inputted. The column access block signal generation circuit may deactivate the column access block signal during a period corresponding to an N-th read command among the gap-less read commands. N is an integer that is no less than 2.

Abstract: A semiconductor apparatus includes a substrate, a first die, and a second die. The substrate includes first and second byte pads of a first channel and first and second byte pad of a second channel. First byte pads of the first die are respectively coupled to the first byte pads of the first channel, and second byte pads of the first die are respectively coupled to the second byte pads of the first channel. The second die, as disposed, is rotated by 180° with respect to the first die. First byte pads of the second die are respectively coupled to the second byte pads of the second channel, and second byte pads of the second die are respectively coupled to the first byte pads of the second channel.

Abstract: A column control circuit may include a column control signal generation circuit and a column access block signal generation circuit. The column control signal generation circuit is configured to activate an input/output strobe signal when a column access block signal is deactivated. The column control signal generation circuit is configured to deactivate the input/output strobe signal when the column access block signal is activated. The column access block signal generation circuit is configured to activate the column access block signal when gap-less read commands may be inputted. The column access block signal generation circuit may deactivate the column access block signal during a period corresponding to an N-th read command among the gap-less read commands. N is an integer that is no less than 2.

Abstract: A semiconductor apparatus includes a substrate, a first die, and a second die. The substrate includes first and second byte pads of a first channel and first and second byte pad of a second channel. First byte pads of the first die are respectively coupled to the first byte pads of the first channel, and second byte pads of the first die are respectively coupled to the second byte pads of the first channel. The second die, as disposed, is rotated by 180° with respect to the first die. First byte pads of the second die are respectively coupled to the second byte pads of the second channel, and second byte pads of the second die are respectively coupled to the first byte pads of the second channel.

Abstract: A column control circuit may include a column control signal generation circuit and a column access block signal generation circuit. The column control signal generation circuit is configured to activate an input/output strobe signal when a column access block signal is deactivated. The column control signal generation circuit is configured to deactivate the input/output strobe signal when the column access block signal is activated. The column access block signal generation circuit is configured to activate the column access block signal when gap-less read commands may be inputted. The column access block signal generation circuit may deactivate the column access block signal during a period corresponding to an N-th read command among the gap-less read commands. N is an integer that is no less than 2.

Abstract: A semiconductor apparatus includes a substrate, a first die, and a second die. The substrate includes first and second byte pads of a first channel and first and second byte pad of a second channel. First byte pads of the first die are respectively coupled to the first byte pads of the first channel, and second byte pads of the first die are respectively coupled to the second byte pads of the first channel. The second die, as disposed, is rotated by 180° with respect to the first die. First byte pads of the second die are respectively coupled to the second byte pads of the second channel, and second byte pads of the second die are respectively coupled to the first byte pads of the second channel.

Abstract: A semiconductor device and or method of repairing the semiconductor device may be provided. The semiconductor device may include an error information storage circuit. The error information storage circuit may be configured to latch an address to generate a latched fail address and a rupture control signal.

Abstract: A semiconductor device and or method of repairing the semiconductor device may be provided. The semiconductor device may include an error information storage circuit. The error information storage circuit may be configured to latch an address to generate a latched fail address and a rupture control signal.

Abstract: A semiconductor apparatus may include a semiconductor chip, and the semiconductor chip may include a first pad, a second pad, and a bump. The first pad may be configured to receive a signal from an external device, and the second pad may include first and second metal layers electrically isolated from each other. The bump may be stacked over the second pad, and may be configured to receive a signal from a controller chip.

Abstract: A semiconductor apparatus may include a semiconductor chip, and the semiconductor chip may include a first pad, a second pad, and a bump. The first pad may be configured to receive a signal from an external device, and the second pad may include first and second metal layers electrically isolated from each other. The bump may be stacked over the second pad, and may be configured to receive a signal from a controller chip.

Abstract: A semiconductor apparatus includes a power supply changing unit. The power supply changing unit is configured to receive an enable signal and power supply voltage, generate first voltage or second voltage according to the enable signal, change a voltage level of the second voltage according to a level signal, and supply the first voltage or the second voltage as a driving voltage of an internal circuit, wherein the internal circuit receives a first input signal to output a second input signal.

Abstract: A semiconductor apparatus includes a power supply changing unit. The power supply changing unit is configured to receive an enable signal and power supply voltage, generate first voltage or second voltage according to the enable signal, change a voltage level of the second voltage according to a level signal, and supply the first voltage or the second voltage as a driving voltage of an internal circuit, wherein the internal circuit receives a first input signal to output a second input signal.