Abstract: According to example embodiments, a method of operating a power device includes applying a control voltage to a control electrode of the power device, where the control electrode is electrically separated from a source electrode, a drain electrode, and a gate electrode of the power device. The control voltage is separately applied to the control electrode. The method may include applying a negative control voltage to the control electrode prior to applying a gate voltage to the gate electrode.

Abstract: Provided are a high electron mobility transistor and/or a method of manufacturing the same. The high electron mobility transistor includes a channel layer, a channel supply layer formed on the channel layer to generate a two-dimensional electron gas (2DEG), a depletion forming layer formed on the channel supply layer, a gate electrode formed on the depletion forming layer, and a barrier layer formed between the depletion forming layer and the gate electrode. Holes may be prevented from being injected into the depletion forming layer from the gate electrode, thereby reducing a gate forward current.

Abstract: According to example embodiments, a method of operating a power device includes applying a control voltage to a control electrode of the power device, where the control electrode is electrically separated from a source electrode, a drain electrode, and a gate electrode of the power device. The control voltage is separately applied to the control electrode. The method may include applying a negative control voltage to the control electrode prior to applying a gate voltage to the gate electrode.