Patents by Inventor Soohwan Jang

Soohwan Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor
    Patent number: 10488364
    Abstract: Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WO3 and AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT).
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: November 26, 2019
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED
    Inventors: Soohwan Jang, Fan Ren, Stephen J. Pearton
  • Water-insensitive gas sensor using polymer-encapsulated Pt—AlGaN/GaN diodes
    Patent number: 10269989
    Abstract: A hydrogen sensor can include a substrate, an Ohmic metal disposed on the substrate, a nitride layer disposed on the substrate and having a first window exposing the substrate, a Schottky metal placed in the first window and disposed on the substrate, a final metal disposed on the nitride layer and the Schottky metal and having a second window exposing the Schottky metal, and a polymethyl-methacrylate (PMMA) layer encapsulating the second window. The PMMA layer can fill the second window and be in contact with the Schottky metal.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: April 23, 2019
    Assignee: University of Florida Research Foundation, Incorporated
    Inventors: Fan Ren, Stephen J. Pearton, Soohwan Jang, Sunwoo Jung
  • THERMALLY STABLE AMMONIA GAS SENSOR USING ZnO-FUNCTIONALIZED AIGaN/GaN HETEROSTRUCTURE TRANSISTOR
    Publication number: 20180313785
    Abstract: Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WO3 and AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT).
    Type: Application
    Filed: April 26, 2018
    Publication date: November 1, 2018
    Inventors: Soohwan Jang, Fan Ren, Stephen J. Pearton
  • WATER-INSENSITIVE GAS SENSOR USING POLYMER-ENCAPSULATED Pt-AlGaN/GaN DIODES
    Publication number: 20180248048
    Abstract: A hydrogen sensor can include a substrate, an Ohmic metal disposed on the substrate, a nitride layer disposed on the substrate and having a first window exposing the substrate, a Schottky metal placed in the first window and disposed on the substrate, a final metal disposed on the nitride layer and the Schottky metal and having a second window exposing the Schottky metal, and a polymethyl-methacrylate (PMMA) layer encapsulating the second window. The PMMA layer can fill the second window and be in contact with the Schottky metal.
    Type: Application
    Filed: February 27, 2018
    Publication date: August 30, 2018
    Inventors: Fan Ren, Stephen J. Pearton, Soohwan Jang, Sunwoo Jung