Abstract: An exposure apparatus for transferring a pattern of a reticle onto a wafer is provided. The exposure apparatus includes an illumination module, a reticle stage, a projection module, a wafer stage, and a control unit. The control unit is configured to calculate an alignment setting of the reticle. The wafer includes a first layer and a second layer disposed on the first layer. The first layer includes a first alignment parameter. The second layer includes a second alignment parameter. The control unit obtains a first weighting factor predetermined according to a property of the first layer, and a second weighting factor predetermined according to a property of the second layer. The alignment setting of the reticle is calculated according to the first alignment parameter, the first weighting factor, the second alignment parameter, and the second weighting factor.

Abstract: An apparatus for processing the substrate includes a substrate stage and a source. The substrate stage is configured to support a substrate thereon. The substrate stage includes a substrate support formed with a first opening therein. The first opening is an annular opening. The source is coupled to the first opening and is configured to supply first gas/air to a bottom surface of the substrate through the first opening.

Abstract: An apparatus for processing the substrate includes a substrate stage and a source. The substrate stage is configured to support a substrate thereon. The substrate stage includes a substrate support formed with a first opening therein. The first opening is an annular opening. The source is coupled to the first opening and is configured to supply first gas/air to a bottom surface of the substrate through the first opening.

Abstract: An exposure apparatus for transferring a pattern of a reticle onto a wafer is provided. The exposure apparatus includes an illumination module, a reticle stage, a projection module, a wafer stage, and a control unit. The control unit is configured to calculate an alignment setting of the reticle. The wafer includes a first layer and a second layer disposed on the first layer. The first layer includes a first alignment parameter. The second layer includes a second alignment parameter. The control unit obtains a first weighting factor predetermined according to a property of the first layer, and a second weighting factor predetermined according to a property of the second layer. The alignment setting of the reticle is calculated according to the first alignment parameter, the first weighting factor, the second alignment parameter, and the second weighting factor.

Abstract: The present disclosure provides an air control cabinet (ACC) module for a clean room system. The clean room system has a clean fab and a clean sub-fab. The clean fab of the clean room system is configured to be disposed with at least one wafer processing apparatus. The ACC module includes an ACC inlet tube, a main cabinet, and an ACC pipeline. The ACC inlet tube is configured to supply air from the clean fab of the clean room system to the ACC module. The main cabinet is connected to the ACC inlet tube and configured to generate clean air from the air supplied from the ACC inlet tube. The ACC pipeline is connected to the main cabinet and configured to supply the clean air generated by the main cabinet to the wafer processing apparatus in the clean fab of the clean room system.

Abstract: A method of exposing the dies of a wafer using the technique of photolithography corrects the deviations that would otherwise occur between the states of alignment of the dies and photolithography exposure equipment. An initial state of alignment of each of the dies of a sample wafer and an exposure device is inspected. The inspection is used to generate raw data of any deviation between the initial states of alignment and ideal states of alignment. The raw data is mapped, and stored as processed data. Both the processed data and basic data concerning the sample wafer are used to produce a preliminary job file that establishes the basic setting of the exposure equipment. Also, a correction deviation value is generated for each of the dies of the sample wafer except for those dies that will be positioned at the ideal position of alignment under the basic setting of the exposure device. The preliminary job file is changed on the basis of the correction deviation values to thereby form a final job file.

Abstract: A method of exposing the dies of a wafer using the technique of photolithography corrects the deviations that would otherwise occur between the states of alignment of the dies and photolithography exposure equipment. An initial state of alignment of each of the dies of a sample wafer and an exposure device is inspected. The inspection is used to generate raw data of any deviation between the initial states of alignment and ideal states of alignment. The raw data is mapped, and stored as processed data. Both the processed data and basic data concerning the sample wafer are used to produce a preliminary job file that establishes the basic setting of the exposure equipment. Also, a correction deviation value is generated for each of the dies of the sample wafer except for those dies that will be positioned at the ideal position of alignment under the basic setting of the exposure device. The preliminary job file is changed on the basis of the correction deviation values to thereby form a final job file.