Abstract: Disclosed herein is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an interlayer insulating film on a semiconductor substrate, forming contact plugs connected to the semiconductor substrate though the interlayer insulating film, forming a first storage node oxide film include a PSG film on the contact plugs, cleaning the semiconductor substrate on which the first storage node oxide film include a PSG film is formed, using isopropyl alcohol (IPA), to remove water-soluble compounds, and forming a second storage node oxide film on the first storage node oxide film.

Abstract: An electrostatic chuck of a high density plasma deposition apparatus, which reduces a temperature variation in a wafer during a high density plasma deposition process to reducing peeling off of a thin film from the wafer or generation of particles on the wafer. The electrostatic chuck includes a support plate, on which a wafer is mounted by static electricity; a helium supply hole formed through the support plate for supplying helium gas to the rear surface of the wafer; a sealing protrusion formed along the edge of the support plate; and wafer lift pins formed inside a region of the support plate surrounded with the sealing protrusion.

Abstract: This invention relates to a process for preparing hydrocarbons, in particular hydrogenation of carbon dioxide over Fe-K/Al.sub.2 O.sub.3 catalyst, which is reduced in hydrogen and activated in the mixture of carbon dioxide and hydrogen.