Abstract: An embodiment relates to a phenol-modified decellularized muscle tissue-derived extracellular matrix (MEM) for muscle regeneration and a method for preparing same. The phenol group-modified decellularized MEM of the embodiment is characterized by containing components similar to original proteins of muscle tissue for muscle regeneration and forming a hydrogel having a stable porous nanofiber structure through dimerization crosslinking between phenol groups, wherein the hydrogel can effectively treat muscle injury or muscle diseases by being administered or implanted into muscle tissue without causing side effects such as an immune response or liver or kidney dysfunction.

Abstract: The provided is a hydrogel that utilizes the naturally occurring substance pectin to exhibit an equivalent or greater effect. Specifically, the present application is intended to provide a hydrogel or a patch which is stable, has strong adhesive strength, is advantageous for drug delivery, can be used for sustained treatment, has extremely low cytotoxicity, and is unlikely to induce an immune response, and thus can be used on various body parts, in particular the oral cavity. In addition, the provide is a hydrogel patch which employs a freeze-drying method prior to crosslinking, and thus exhibits superior adhesion to patches employing a post-crosslinking freeze-drying method.

Abstract: The present disclosure relates to a hydrogel patch for preventing or treating cartilage or bone diseases, including: a hydrogel patch containing a biocompatible polymer functionalized with a phenol group; and a drug for treating cartilage or bone diseases loaded in the hydrogel patch.

Abstract: The present disclosure relates to a hydrogel including chondroitin sulfate functionalized with a phenol derivative, and a composition for cell culture, a composition for promoting cell differentiation, a composition for drug delivery, a composition for promoting tissue regeneration and a composition for tissue transplant, each including the hydrogel. The hydrogel can be advantageously used in the field of tissue engineering.

Abstract: The present disclosure relates to a catechol group- or pyrogallol group-functionalized biocompatible polymer hydrogel patch having excellent biocompatibility and tissue adhesion, and uses for drug delivery, cell transplantation and tissue regeneration using the same. The biocompatible polymer hydrogel patch functionalized with the catechol group or pyrogallol group of the present disclosure has remarkably excellent mechanical properties and tissue adhesion compared with a solution-based bulk hydrogel. Therefore, it can load cells and a drug in vivo for a long time and also safely and efficiently deliver the cells and the drug to a target site.

Abstract: Disclosed are a novel benzoic acid amide derivative compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a prodrug thereof, a hydrate thereof, or a solvate thereof. The novel compound and the like inhibit melanin production, prevent tyrosinase activity, and have an excellent skin whitening effect.

Abstract: Disclosed are a novel benzoic acid amide derivative compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a prodrug thereof, a hydrate thereof, or a solvate thereof. The novel compound and the like inhibit melanin production, prevent tyrosinase activity, and have an excellent skin whitening effect.

Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.

Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.

Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.

Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.

Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.

Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

Abstract: The present invention relates to a novel benzoic acid amide derivative compound, isomers thereof, pharmaceutically acceptable salts thereof, prodrugs thereof, hydrates thereof, or solvates thereof. The novel compound has excellent skin whitening effects.

Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.

Abstract: A liquid crystal display device includes a first substrate having a thin film transistor (TFT) in each pixel region, a first inorganic protective film on the first substrate including the TFT, color filters on the first inorganic protective film in each pixel region excluding the TFT, a common electrode on the color filters, a second protective film over the entire first inorganic protective film including the common electrode, a pixel electrode on the second inorganic protective film with the pixel electrode connected to a drain electrode of the TFT exposed by selective removal of the first and second inorganic protective films, the pixel electrode forming a fringe field with the common electrode such that the second inorganic protective film is interposed between the pixel electrode and the common electrode, and a column spacer on the second inorganic protective film with the column spacer covering the TFT.

Abstract: The present invention relates to an indirubin-3?-oxime derivative as potent cyclin dependent kinase inhibitor with anti-cancer activity. More particularly, this invention relates to an indirubin-3?-oxime derivative as potent cyclin dependent kinase inhibitor having excellent anti-cancer activity against human lung cancer cell, human fibro sarcoma cell, human colon cancer cell, human leukemia cell, human stomach cancer cell, human nasopharyngeal cancer cell and/or human breast cancer cell.