Patents by Inventor Sooji Nam

Sooji Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11895817
    Abstract: Provided is a static random-access memory (SRAM) device.
    Type: Grant
    Filed: November 18, 2021
    Date of Patent: February 6, 2024
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung Haeng Cho, Byung-Do Yang, Sooji Nam, Jaehyun Moon, Jae-Eun Pi, Jae-Min Kim
  • Publication number: 20230389400
    Abstract: Provided is a flexible organic light emitting element that may include a flexible substrate, a circuit element layer on the flexible substrate, an emission layer on the circuit element layer, a first encapsulation structure between the flexible substrate and the circuit element layer, and a second encapsulation structure on the emission layer, wherein the first encapsulation structure includes a first inorganic layer and a first organic layer, which are sequentially stacked on an upper surface of the flexible substrate, and the first organic layer includes a first polymer nanocomposite.
    Type: Application
    Filed: April 19, 2023
    Publication date: November 30, 2023
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Byoung-Hwa KWON, Chan-mo KANG, Kukjoo KIM, Gi Heon KIM, Sujung KIM, Sooji NAM, Chunwon BYUN, Jin-Wook SHIN, Jong-Heon YANG, Hyunsu CHO, Sukyung CHOI
  • Publication number: 20230097393
    Abstract: Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.
    Type: Application
    Filed: November 8, 2021
    Publication date: March 30, 2023
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sung Haeng CHO, Byung-Do YANG, Sooji NAM, Jaehyun MOON, Jae-Eun PI, Jae-Min KIM
  • Publication number: 20230102625
    Abstract: Provided is a static random-access memory (SRAM) device.
    Type: Application
    Filed: November 18, 2021
    Publication date: March 30, 2023
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sung Haeng CHO, Byung-Do YANG, Sooji NAM, Jaehyun MOON, Jae-Eun PI, Jae-Min KIM
  • Patent number: 11424299
    Abstract: Provided is a pressure sensitive display device including a sensing substrate, a reaction substrate provided on the sensing substrate, and spacers provided between the sensing substrate and the reaction substrate to space the sensing substrate apart from the reaction substrate. Here, the sensing substrate includes a flexible substrate and a touch electrode provided on one surface of the flexible substrate, which faces the reaction substrate. The reaction substrate includes a transparent substrate, a transparent electrode provided on one surface of the transparent substrate, which faces the sensing substrate, and a light emitting layer disposed on the transparent electrode.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: August 23, 2022
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Ji-Young Oh, Seung Youl Kang, Seongdeok Ahn, Jeong Ik Lee, Chi-Sun Hwang, Byoung-Hwa Kwon, Tae-Youb Kim, Jeho Na, Sooji Nam, Jaehyun Moon, Young Sam Park, Chan Woo Park, Doo-Hee Cho, Chul Woong Joo, Jae-Eun Pi
  • Publication number: 20210393978
    Abstract: Provided is a bio-signal detection and stimulation device. The bio-signal detection and stimulation device includes a flexible substrate, a stimulation part on the flexible substrate, and a detection electrode part on the flexible substrate. The stimulation part and the detection electrode part vertically overlap each other, the stimulation part includes an organic light emitting diode (OLED), the stimulation part emits an optical signal, and the detection electrode part detects a bio-signal.
    Type: Application
    Filed: June 21, 2021
    Publication date: December 23, 2021
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: O Eun KWON, Chan-mo KANG, Kukjoo KIM, Jin-Wook SHIN, CHUNWON BYUN, Sukyung CHOI, Byoung-Hwa KWON, Sujung KIM, Sooji NAM, Chan Woo PARK, Jong-Heon YANG
  • Publication number: 20200321403
    Abstract: Provided is a pressure sensitive display device including a sensing substrate, a reaction substrate provided on the sensing substrate, and spacers provided between the sensing substrate and the reaction substrate to space the sensing substrate apart from the reaction substrate. Here, the sensing substrate includes a flexible substrate and a touch electrode provided on one surface of the flexible substrate, which faces the reaction substrate. The reaction substrate includes a transparent substrate, a transparent electrode provided on one surface of the transparent substrate, which faces the sensing substrate, and a light emitting layer disposed on the transparent electrode.
    Type: Application
    Filed: April 7, 2020
    Publication date: October 8, 2020
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Ji-Young OH, Seung Youl KANG, Seongdeok AHN, Jeong Ik LEE, Chi-Sun HWANG, Byoung-Hwa KWON, Tae-Youb KIM, Jeho NA, Sooji NAM, Jaehyun MOON, Young Sam PARK, Chan Woo PARK, Doo-Hee CHO, Chul Woong JOO, Jae-Eun PI
  • Patent number: 10510924
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: December 17, 2019
    Assignees: The Board of Trustees of the University of Illinois, Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, III, Kishori Deshpande, Jake Joo
  • Publication number: 20180026104
    Abstract: Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.
    Type: Application
    Filed: June 13, 2017
    Publication date: January 25, 2018
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sung Haeng CHO, Sooji NAM, Chi-Sun HWANG, Su Jae LEE, Kyoung Ik CHO, Jae-Eun PI
  • Publication number: 20160365478
    Abstract: In one aspect, methods are provided for fabrication of multiple layers of a nanostructure material composite, and devices produced by such methods. In another aspect, methods are provided that include use of an overcoating fluoro-containing layer that can facilitate transfer of a nanostructure material layer, and devices produced by such methods.
    Type: Application
    Filed: December 19, 2014
    Publication date: December 15, 2016
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, John A. Rogers, Bong Hoon Kim, Sang Y. Yang, Peter Trefonas, III, Kishori Deshpande, Jaebum Joo, Jieqian J. Zhang, Jong Keun Park
  • Publication number: 20160225946
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.
    Type: Application
    Filed: August 31, 2015
    Publication date: August 4, 2016
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, III, Kishori Deshpande, Jake Joo
  • Publication number: 20150364645
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
    Type: Application
    Filed: January 16, 2015
    Publication date: December 17, 2015
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
  • Patent number: 9123638
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 1, 2015
    Assignees: Rohm and Haas Electronic Materials, LLC, The University of Illinois, The Office of Technology Management, Dow Global Technologies LLC
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
  • Publication number: 20150243837
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; a first endcap contacting one of the first end or the second end; where the first endcap comprises a first semiconductor and where the first endcap extends from the one-dimensional nanoparticle to form a first nanocrystal heterojunction; and a second endcap that contacts the first endcap; where the second endcap comprises a second semiconductor and where the second endcap extends from the first endcap to form a second nanocrystal heterojunction; and where the first semiconductor is different from the second semiconductor.
    Type: Application
    Filed: March 15, 2013
    Publication date: August 27, 2015
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
  • Patent number: 8937294
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 20, 2015
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
  • Publication number: 20140264259
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
  • Publication number: 20140264258
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo