Abstract: A semiconductor device includes a substrate, a first transistor disposed on the substrate and including first channel patterns stacked in a vertical direction, a first gate electrode surrounding each first channel pattern, and a first internal spacer on a side surface of the first gate electrode, and a second transistor stacked on the first transistor and comprising second channel patterns stacked in the vertical direction, a second gate electrode surrounding each second channel pattern, and a second internal spacer on a side surface of the second gate electrode. The first channel patterns and the second channel patterns include a two-dimensional material layer. A material of the first internal spacer is different from a material of the second internal spacer.

Abstract: Provided is a semiconductor device including a base pattern, channel layers disposed to be spaced apart from each other in a first direction perpendicular to a frontside of the base pattern on the frontside of the base pattern, a first source/drain area and a second source/drain area electrically connected to the channel layers on the frontside of the base pattern, a backside contact plug electrically connected to the first source/drain area from a backside of the base pattern, and a frontside contact plug electrically connected to the second source/drain area above the frontside of the base pattern, and the first source/drain area includes a first-first layer disposed on side surfaces of the channel layers of which each is perpendicular to a second direction crossing the first direction, and a first-second layer disposed on the first-first layer, and the backside contact plug is spaced apart from the first-first layer.

Abstract: A semiconductor device may include a lower active pattern extending in a first direction and including a lower channel pattern, and a lower source/drain pattern on a side of the lower channel pattern. The semiconductor device may further include an upper active pattern spaced apart from the lower active pattern in a second direction and including an upper channel pattern, and an upper source/drain pattern on a side of the upper channel pattern. The semiconductor device may further include a first intermediate insulating film between the lower source/drain pattern and the upper source/drain pattern; a through contact extending through the upper source/drain pattern and the first intermediate insulating film in the second direction and electrically connected to the upper source/drain pattern and the lower source/drain pattern; and an upper etch stop film in contact with a portion of a side surface of the through contact.

Abstract: A semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on the substrate, a first plurality of upper nanosheets stacked on the active pattern to be spaced apart from each other in a vertical direction, a second plurality of upper nanosheets stacked on the active pattern to be spaced apart from each other in the vertical direction, a first gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, a second gate electrode extending in the second horizontal direction on the active pattern, an upper source/drain region between the first plurality of upper nanosheets and the second plurality of upper nanosheets, and a source/drain contact extending to the upper source/drain region and electrically coupled with the upper source/drain region.

Abstract: A semiconductor device includes: a lower stack including a plurality of lower gate lines and a plurality of lower nanosheets that are alternately stacked on a substrate; an upper stack including a plurality of upper gate lines and a plurality of upper nanosheets that are alternately stacked on the lower stack; a lower source/drain region disposed on a side surface of the lower stack; and an upper source/drain region disposed on the lower source/drain region and adjacent to a side surface of the upper stack, wherein the upper source/drain region includes a side impurity layer and an upper center impurity layer, wherein the side impurity layer extends in a vertical direction along the side surface of the upper stack, and the upper center impurity layer is disposed on an inner side of the side impurity layer, and a first surface of the upper center impurity layer has a curved shape.

Abstract: A semiconductor device may include a substrate including an active pattern, first channel layers spaced apart on the active pattern in a vertical direction, a first gate structure surrounding the first channel layers, first source/drain patterns on both sides of the first gate structure and connected to the first channel layers, first internal spacers between the first gate structure and the first source/drain patterns, second channel layers spaced apart in the vertical direction on the first channel layers, a second gate structure on the first gate structure and surrounding the second channel layers, second source/drain patterns on both sides of the second gate structure and connected to the second channel layers, and second internal spacers between the second gate structure and the second source/drain patterns. The first and second internal spacers may have different shapes. The vertical direction may be perpendicular to an upper surface of the substrate.

Abstract: Disclosed is a semiconductor device comprising a substrate that includes a device isolation pattern and an active region, a bit line that extends in a first direction on the substrate, a semiconductor pattern on the bit line, a growth mask layer on the bit line and having a sidewall in contact with the semiconductor pattern, a word line on the bit line and extending in a second direction that intersects the first direction, and a gate dielectric pattern between the word line and the semiconductor pattern. A top surface of the growth mask layer is at a level higher than that of a bottom surface of the semiconductor pattern.

Abstract: The present invention relates to a technique of cooling a temperature on the surface or under a material by emitting heat under a radiative cooling device to the outside while minimizing the absorption of light in a solar spectrum by forming a paint coating layer with excellent radiative cooling performance on various surfaces. A radiative cooling device according to an embodiment of the present invention may include a paint coating layer formed by coating or dyeing on various surfaces a paint solution mixed with nano or microparticles of which a particle size and a composition are determined in consideration of infrared emissivity and reflectance to incident sunlight in a wavelength range corresponding to a sky window and a binder mechanically connecting the surfaces of the nano or microparticles in a solvent.

Abstract: The present disclosure relates to a technical idea of reducing the surface temperature of a material or temperature under a material by emitting heat under a device to the outside by absorbing and emitting long-wavelength infrared light corresponding to the wavelength range of the atmospheric window while minimizing absorption of light of the solar spectrum. More particularly, the present disclosure relates to a technology for providing a radiative cooling device having a multilayer structure that is capable of increasing sunlight reflection through differences in the refractive indexes of the device-forming materials while performing selective emission over the wavelength range of the atmospheric window using a radiative cooling device having a multilayer structure composed of polymers and inorganic materials.

Abstract: A radiative cooling device, and a method of manufacturing the same, includes a reflective layer disposed on a substrate and responsible for reflecting sunlight having wavelengths corresponding to ultraviolet, visible, and near-infrared regions; and a radiative cooling layer disposed on the reflective layer and responsible for absorbing sunlight having a wavelength corresponding to a mid-infrared region and emitting the sunlight as heat, wherein the radiative cooling layer includes a first radiation layer including an uneven pattern; and a second radiation layer disposed on the first radiation layer and having a refractive index different from that of the first radiation layer.

Abstract: The present invention relates to a technique of cooling a temperature on the surface or under a material by emitting heat under a radiative cooling device to the outside while minimizing the absorption of light in a solar spectrum by forming a paint coating layer with excellent radiative cooling performance on various surfaces. A radiative cooling device according to an embodiment of the present invention may include a paint coating layer formed by coating or dyeing on various surfaces a paint solution mixed with nano or microparticles of which a particle size and a composition are determined in consideration of infrared emissivity and reflectance to incident sunlight in a wavelength range corresponding to a sky window and a binder mechanically connecting the surfaces of the nano or microparticles in a solvent.

Abstract: The present disclosure relates to a technical idea of reducing the surface temperature of a material or temperature under a material by emitting heat under a device to the outside by absorbing and emitting long-wavelength infrared light corresponding to the wavelength range of the atmospheric window while minimizing absorption of light of the solar spectrum. More particularly, the present disclosure relates to a technology for providing a radiative cooling device having a multilayer structure that is capable of increasing sunlight reflection through differences in the refractive indexes of the device-forming materials while performing selective emission over the wavelength range of the atmospheric window using a radiative cooling device having a multilayer structure composed of polymers and inorganic materials.

Abstract: The present invention discloses a radiative cooling device and a method of manufacturing the same. Specifically, the radiative cooling device according to an embodiment of the present invention includes a reflective layer formed on a substrate and responsible for reflecting sunlight having wavelengths corresponding to ultraviolet, visible, and near-infrared regions; and a radiative cooling layer formed on the reflective layer and responsible for absorbing sunlight having a wavelength corresponding to a mid-infrared region and emitting the sunlight as heat, wherein the radiative cooling layer includes a first radiation layer including an uneven pattern; and a second radiation layer formed on the first radiation layer and having a refractive index different from that of the first radiation layer.