Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: Disclosed are a lift pin, an apparatus for processing a substrate and a method of processing a substrate. The lift pin includes a rod portion and a head portion. The rod portion moves in a passage formed through a chuck having a substrate processed using a reaction gas. The head portion is provided on the rod portion to make contact with the substrate. The head portion may close the passage to prevent the reaction gas from flowing into the passage.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: An apparatus for a semiconductor device includes: a chamber having upper and lower portions, a volume of the lower portion being greater than a volume of the upper portion; a susceptor in the chamber, the susceptor having a substrate on a top surface thereof; an injector injecting process gases into the chamber; a coil unit over the chamber; a radio frequency power supply connected to the coil unit; and an exhaust through the chamber.

Abstract: An HDP-CVD apparatus includes: a reactive chamber constructed with a lower chamber with an opened upper portion and a ceramic dome covering the upper portion of the lower chamber; a gas discharge pipe installed at the lower chamber; an RF coil installed to cover an outer wall of the ceramic dome; a gas injection pipe inserted into a wall of the ceramic dome through a marginal end portion of the ceramic dome from the outside of the reactive chamber, guided to the middle portion of the ceramic dome, and come out in the internal space of the reactive chamber at the middle portion of the ceramic dome; and a substrate support installed inside the reactive chamber in order to mount a substrate. Since the process gas is pre-heated, a reactivity is improved and a very high density plasma can be obtained.

Abstract: Disclosed is a high density plasma processing apparatus having a resonance antenna coil. The apparatus includes a processing chamber providing a hermetically sealed plasma generating space and having a planar surface on a top wall; a plurality of gas pipes that inject process gases into the processing chamber; a plurality of loop-shaped antennas installed on the planar surface and connected in parallel; a resonance antenna coil receiving a high frequency power and including the plurality of loop-shaped antennas and a plurality of variable capacitor that are connected in parallel with the plurality of loop-shaped antennas in order to maintain a resonance state therebetween; a means for heating the resonance antenna coil by way of using a heat exchange medium; and a means for fixing a substrate inside the processing chamber parallel with the planar surface of the top wall of the processing chamber.