Abstract: A semiconductor device can include a plurality of active patterns protruding from a substrate and spaced apart on the substrate by first and second distances. A plurality of selective epitaxial growth portions can be each grown on an upper surface of a respective one of the plurality of active patterns. A source/drain contact can be extending across the plurality of selective epitaxial growth portions to remain above top surfaces of first ones of plurality of active patterns that are spaced apart by the first distance between the first ones of plurality of active patterns and can include an extension that extends toward the substrate to below top surfaces of two of the plurality of active patterns that are spaced apart by the second distance between the two of the plurality of active patterns.

Abstract: A semiconductor device can include a plurality of active patterns protruding from a substrate and spaced apart on the substrate by first and second distances. A plurality of selective epitaxial growth portions can be each grown on an upper surface of a respective one of the plurality of active patterns. A source/drain contact can be extending across the plurality of selective epitaxial growth portions to remain above top surfaces of first ones of plurality of active patterns that are spaced apart by the first distance between the first ones of plurality of active patterns and can include an extension that extends toward the substrate to below top surfaces of two of the plurality of active patterns that are spaced apart by the second distance between the two of the plurality of active patterns.

Abstract: Provided are a multi-gate transistor device and a method for fabricating the same. The method for fabricating the multi-gate transistor device includes forming first and second fins shaped to protrude on a substrate and aligned and extending in a first direction and a trench separating the first and second fins from each other in the first direction between the first and second fins, performing ion implantation of impurities on sidewalls of the trench, forming a field dielectric film filling the trench, forming a recess in the first fin not exposing the field dielectric film, and growing an epitaxial layer in the recess.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device comprising a substrate, a first fin formed on the substrate, and an isolation film formed on the substrate and coming in contact with a part of the first fin, wherein the first fin includes a first region that is in contact with the isolation film, a second region that is in non-contact with the isolation film, and a boundary line between the first region and the second region, the first region has a slope that is at right angles with respect to the boundary line, and the second region has a slope that is an acute angle with respect to the boundary line.

Abstract: The present invention relates to an oral preparation of N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl) phenoxy]pentoxyl-benzamidine having improved bioavailability. More particularly, the present invention relates to an oral preparation comprising: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl) phenoxy]pentoxy}-benzamidine or pharmaceutically acceptable salt thereof; and one or more carbonates selected from the group consisting of alkalimetal carbonate, alkalimetal bicarbonate and alkaline earth metal carbonate, and/or one or more disintegrants selected from the group consisting of sodium starch glycolate, carmellose calcium and croscarmellose sodium. The oral preparation according to the present invention inhibits gelation of N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl) phenoxy]pentoxy}-benzamidine or pharmaceutically acceptable salt thereof in the early stage of release, which increases dissolution rate and remarkably raises bioavailability.

Abstract: A gate driving apparatus and image display device using the same and driving method thereof comprises a start pulse generator which generates a second gate start pulse by a logic operation of a first gate start pulse and a gate output enable signal, a shift register which generates a shift signal by sequentially shifting the second gate start pulse in accordance with a gate shift clock, and an output unit which outputs the shift signal in accordance with the gate output enable signal.

Abstract: A LCD device includes a liquid crystal panel having a plurality of perpendicularly crossing gate and data lines, first and second display sections divided by a specific one of the data lines, a plurality of first data drive ICs driving the data lines in the first display section, a plurality of second data drive ICs driving the data lines in the second display section, and a timing controller rearranging image data input from a system into first image data corresponding to the first display section and second image data corresponding to the second display section, and simultaneously supplying the first image data and second image data, respectively, in a sequence starting from one of the first and second data drive ICs, respectively, closest to the specific data line towards one of the respective first and second data drive ICs farthest from the specific data line.

Abstract: Liquid crystal display device including a liquid crystal panel having a plurality of gate lines and data lines, and at least one drive-IC having multi-channels, the multi-channels having linked channels connected to the gate lines or data lines and dummy channels not linked to the gate lines or the data lines. The linked channels may be arranged successively in a line and the dummy channels may be arranged at opposite ends of the line of the linked channels to thereby reduce dim block formation by shifting positions of the dummy portions.

Abstract: A method for continuously producing foamed metals is disclosed. The method comprises the steps of (i) adding a previously dissolved molten metal to a viscosity-enhancing furnace and agitating the molten metal so as to uniformly maintain the viscosity of the molten metal; (ii) conveying the molten metal to an electronic agitating type foaming furnace; (iii) injecting gas into the conveyed molten metal while agitating to obtain a foamed molten metal; and (iv) drawing the obtained foamed molten metal using a roller and cooling the drawn foamed metal.

Abstract: An apparatus for manufacturing a surface light source apparatus in which a light guide pattern portion is formed on a light guide panel includes a pattern design system to which data about a pattern to be formed on the light guide pattern is input. A control system is connected to the pattern design system and transmits a position signal matching a coordinate value of each pattern to be formed on the light guide panel. A header moving portion mechanically moves vertically and horizontally according to the position signal received from the control system. A laser system outputs a laser beam according to a pulse signal synchronized with a movement of the header moving portion. A lens portion allows a laser beam output from the laser system to pass the header moving portion and to be focused on a scanning surface of the light guide panel. A warp prevention unit prevents the light guide panel from warping due to a local heating by the laser beam.