Abstract: The present disclosure relates to a plurality of host materials, an organic electroluminescent compound, and an organic electroluminescent device comprising the same. An organic electroluminescent device with improved driving voltage, luminous efficiency and/or lifespan properties can be provided by comprising the specific combination of compounds according to the present disclosure as a host material, or by comprising compounds according to the present disclosure.

Abstract: The present disclosure provides a compound of following formula and an organic light emitting device and an organic light emitting display device including the compound. The compound of the present disclosure serves as a host or a dopant in an emitting material layer.

Abstract: One embodiment of the present invention relates to a lithium metal anode. Wherein the lithium metal anode comprises a current collector and a lithium metal thin film layer disposed on at least one surface of the current collector and having a thickness in a range of 0.1 to 200 ?m and a coating layer disposed on a surface of the lithium metal thin film layer, wherein, the coating layer comprising a Li—N—C—H—O based ionic compound.

Abstract: The catalyst for methane reformation according to an exemplary embodiment of the present application comprises: a porous metal support; a first coating layer provided on the porous metal support and comprising the perovskite-based compound represented by Chemical Formula 1; and a second coating layer provided on the first coating layer and comprising the perovskite-based compound represented by Chemical Formula 2: SrTiO3??[Chemical Formula 1] Sr1-xAxTi?ByO3-???[Chemical Formula 2] wherein all the variables are described herein.

Abstract: A random access method performed by a communication node may comprise: receiving RACH configuration information; measuring a distance between a base station and a terminal or a signal characteristic value corresponding to the distance between the base station and the terminal; determining a timing offset value to be applied to random access preamble transmission using the signal characteristic value, preset threshold value, and preset timing offset value; and transmitting a random access preamble generated on the basis of the RACH configuration information to the base station, wherein the threshold value and the timing offset value are included in the RACH configuration information.

Abstract: The present disclosure relates to a plurality of host materials, an organic electroluminescent compound, and an organic electroluminescent device comprising the same. By comprising a plurality of host materials and/or an organic electroluminescent compound according to the present disclosure, an organic electroluminescent device having low driving voltage and/or high luminous efficiency and/or long lifespan characteristics can be provided.

Abstract: The catalyst for methane reformation according to an exemplary embodiment of the present application comprises: a porous metal support; a first coating layer provided on the porous metal support and comprising an inorganic oxide; and a second coating layer provided on the first coating layer and comprising the perovskite-based compound represented by Chemical Formula 2: Sr1-xAxTi?ByO3-???[Chemical Formula 2] wherein all the variables are described herein.

Abstract: The present disclosure relates to an organic electroluminescent compound, and an organic electroluminescent device comprising the same. It is possible to provide an organic electroluminescent device which can be deposited at a low deposition temperature and/or in which clogging is reduced.

Abstract: A scan driving circuit of a display device includes a first output terminal electrically connected to a first scan line, a second output terminal electrically connected to a second scan line, a first masking circuit electrically connecting the first output terminal and the second output terminal and outputting, as a first scan signal, a second scan signal to the first output terminal, a driving circuit outputting the second scan signal to the second output terminal in response to clock signals and a carry signal, and a second masking circuit masking the second scan signal to a predetermined level in response to the second masking signal, wherein the first masking circuit electrically disconnects the first output terminal from the second output terminal in response to a first masking signal.

Abstract: The present disclosure relates to a method for producing a nonwoven fabric which improves the impregnation property of a fabric softener in the nonwoven fabric so as to apply the nonwoven fabric to a dryer sheet (sheet-type fabric softener). In a nonwoven fabric made of two types of polyester long fiber mixed filament yarns, by widening the specific surface area, adjusting the evenness deviation to be small and increasing the porosity, the impregnation property of a fabric softener is improved even when the nonwoven fabric is made lightweight, and the nonwoven fabric can be applied to a dryer sheet.

Abstract: The present disclosure relates to a plurality of host materials comprising a compound represented by formula 1 and a compound represented by formula 2, and an organic electroluminescent device comprising the same. By comprising the plurality of host materials comprising a specific combination of compounds, it is possible to provide an organic electroluminescent device having long lifespan characteristics.

Abstract: In an aspect, the present disclosure provides a heat-treated transition metal carbonitride MXene film annealed at high temperatures and a polymer composite comprising the same. In another aspect, the present disclosure provides a method for producing a heat-treated transition metal carbonitride MXene film comprising: obtaining a MXene aqueous solution containing dispersed 2-dimensional (2D) MXenes through an acid etching process; filtering the obtained MXene aqueous solution through a vacuum filtration process to produce a free-standing film; and annealing the produced free-standing film at high temperatures to obtain a heat-treated transition metal carbonitride MXene film. In still another aspect, the present disclosure provides an electromagnetic interference (EMI) shielding method comprising: superposing a coating comprising a heat-treated transition metal carbonitride MXene film on at least one surface of an object in a contact or non-contact manner.

Abstract: A semiconductor memory device includes a stack of word lines and insulating patterns. Cell pillars extend vertically through the stack of word lines and insulating patterns with memory cells being formed at the junctions of the cell pillars and the word lines. A ratio of the thickness of the word lines to the thickness of immediately neighboring insulating patterns is different at different locations along one or more of the cell pillars. Related methods of manufacturing and systems are also disclosed.

Abstract: A method of a first user equipment (UE) may comprise: receiving a downlink (DL) reference signal transmitted by a base station using a beam included in a beam candidate group to be used for sidelink (SL) communication with a second UE; measuring a DL reference signal received power (RSRP) of the DL reference signal; determining a transmit power of a beam included in the beam candidate group based on the measured DL RSRP; and transmitting SL data to the second UE with the determined transmit power.

Abstract: An operation method of a relay node may include: receiving, from a first communication node, first data composed of n bits; receiving, from a second communication node, second data composed of m bits; in response to determining that n is greater than m, generating first T-data of m bits excluding (n-m) bits from the n-bits of the first data and first R-data of (n-m) bits; generating third data by performing a network coding operation on the first T-data and the second data; transmitting the third data to the first communication node; and transmitting the third data and the first R-data to the second communication node.

Abstract: A semiconductor package includes a package substrate, a semiconductor chip on the package substrate, a transparent substrate on the semiconductor chip, a dam structure between the semiconductor chip and the transparent substrate, a dummy pad on a lower side of the dam structure and to which no wiring is connected, a planarization film extending along an upper surface of the semiconductor chip and a passivation film on the planarization film, wherein the planarization film is spaced apart from the dam structure.

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

Abstract: Disclosed are a relay method and device in a communication system. An operation method of a first communication node comprises the steps of: transmitting a reference signal to one or more candidate R nodes; receiving first feedback information including a minimum value of a first RSRP from a first candidate R node belonging to the one or more candidate R nodes; receiving second feedback information including a minimum value of a second RSRP from a second candidate R node belonging to the one or more candidate R nodes; comparing a first value based on the first feedback information with a second value based on the second feedback information; when the first value is greater than the second value, selecting the first candidate R node as an R node that is to perform a relaying operation; and communicating with a second communication node via the R node.

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

Abstract: A method of a transmitting terminal may include: setting an initial beam pairing flag indicating that the transmitting terminal transmitting sidelink-synchronization signal blocks (S-SSBs) is not a synchronization reference terminal; transmitting a plurality of S-SSBs including the initial beam pairing flag in a beam sweeping scheme; receiving, from a receiving terminal, information on a preferred beam among a plurality of beams through which the plurality of S-SSBs are transmitted; and transmitting data to the receiving terminal using the preferred beam.