Abstract: A photovoltaic diode comprising an emitter layer of doped Group III-V semiconductor material, having a first conductivity type and a first bandgap in at least part of the layer, an intrinsic layer of dilute nitride Group III-V semiconductor material having a composition given by the formula Ga1-zInzNxAsySb1-x-y, where 0<z<0.20, 0.01<x<0.05, and y>0.80 having a second bandgap, a base layer of semiconductor material having a third bandgap and a second conductivity type opposite to the first conductivity type. The emitter, intrinsic and base layers form a diode junction. The first bandgap is greater than the second bandgap.

Abstract: In various embodiments, an apparatus for separating a stacked arrangement including a first layer, a second layer and a release layer between the first layer and the second layer may be provided. The apparatus may include an attachment surface configured to suspend the stacked arrangement by attaching to the first layer. The apparatus may further include an actuating mechanism configured to form a curvature of the first layer by bending the attachment surface. The apparatus may also include a holder to hold an etchant for etching the release layer to separate the first layer from the second layer.

Abstract: A cell arrangement including a plurality of solar sub cells stacked above one another, wherein at least one solar sub cell of the plurality of solar sub cells comprises an alloy of gallium, nitrogen, arsenic and antimony.

Abstract: In various embodiments, an apparatus for separating a stacked arrangement including a first layer, a second layer and a release layer between the first layer and the second layer may be provided. The apparatus may include an attachment surface configured to suspend the stacked arrangement by attaching to the first layer. The apparatus may further include an actuating mechanism configured to form a curvature of the first layer by bending the attachment surface. The apparatus may also include a holder to hold an etchant for etching the release layer to separate the first layer from the second layer.

Abstract: Disclosed is a method for fabrication of a semiconductor of gallium nitride arsenide antimonide (GaNAsSb) on a substrate wherein the fabrication is performed at a fabrication temperature followed by annealing at an annealing temperature for an annealing time; wherein at least one of: the fabrication temperature, annealing temperature and annealing time, is controlled for controlling defect formation in the semiconductor so as to achieve predetermined performance characteristics of the semiconductor.

Abstract: Disclosed is a method for fabrication of a semiconductor of gallium nitride arsenide antimonide (GaNAsSb) on a substrate wherein the fabrication is performed at a fabrication temperature followed by annealing at an annealing temperature for an annealing time; wherein at least one of: the fabrication temperature, annealing temperature and annealing time, is controlled for controlling defect formation in the semiconductor so as to achieve predetermined performance characteristics of the semiconductor.