Abstract: Disclosed is a high-quality and high-functional graphene-based TFT, including: a gate electrode, a gate insulating layer disposed on the gate electrode; an active layer including a nitrogen-doped graphene layer, on which disposed in a partial region of the gate insulating layer; a first electrode disposed on a region of one side of the active layer; and a second electrode disposed on a region of the other side of the active layer. The present invention allows obtaining the TFT having excellent characteristics by directly growing graphene on a Ti layer, implementing damages with remote plasma, and doping with nitrogen gas to fabricate a graphene active layer.

Abstract: A method for depositing a large-area graphene layer and an apparatus for continuous graphene deposition using the same are disclosed. The method can include forming a titanium (Ti) layer on a substrate by sputtering, reducing the titanium layer by spraying a reductant gas containing a hydrogen gas (H2) and a purge gas onto the titanium layer while moving in a first direction in relation to the substrate and exhausting the reductant gas and the purge gas. The method can also include forming graphene by spraying a reactant gas containing a graphene source and the purge gas onto the titanium layer while moving in a second direction opposite the first direction in relation to the substrate and exhausting the reactant gas and the purge gas.

Abstract: Disclosed is a high-quality and high-functional graphene-based TFT, including: a gate electrode, a gate insulating layer disposed on the gate electrode; an active layer including a nitrogen-doped graphene layer, on which disposed in a partial region of the gate insulating layer; a first electrode disposed on a region of one side of the active layer; and a second electrode disposed on a region of the other side of the active layer. The present invention allows obtaining the TFT having excellent characteristics by directly growing graphene on a Ti layer, implementing damages with remote plasma, and doping with nitrogen gas to fabricate a graphene active layer.

Abstract: The present invention relates to a transfer-free method for producing a graphene thin film, which may form a high-quality graphene layer having excellent crystallinity on a substrate without a transfer process, and to a method of fabricating a device using the transfer-free method. More specifically, the present invention relates to a transfer-free method for producing a graphene thin film and a method for fabricating a device using the transfer-free method, the methods including the steps of: (A) forming a titanium buffer layer on a target substrate; and (B) growing a graphene thin film on the titanium buffer layer, wherein process are performed in an oxygen-free atmosphere throughout the steps (A) to (B).

Abstract: A method for depositing a large-area graphene layer and an apparatus for continuous graphene deposition using the same are disclosed. The method can include forming a titanium (Ti) layer on a substrate by sputtering, reducing the titanium layer by spraying a reductant gas containing a hydrogen gas (H2) and a purge gas onto the titanium layer while moving in a first direction in relation to the substrate and exhausting the reductant gas and the purge gas. The method can also include forming graphene by spraying a reactant gas containing a graphene source and the purge gas onto the titanium layer while moving in a second direction opposite the first direction in relation to the substrate and exhausting the reactant gas and the purge gas.

Abstract: The present invention relates to a transfer-free method for forming a graphene layer, in which a high-quality graphene layer having excellent crystallinity can be easily formed over a large area at low temperature by a transfer-free process so that it can be applied directly to a base substrate, which is used in a transparent electrode, a semiconductor device or the like, without requiring a separate transfer process, and to an electrical device comprising a graphene layer formed by the method. More specifically, the transfer-free method for forming a graphene layer comprises the steps of: depositing a Ti layer having a thickness of 3-20 m on a base substrate by sputtering; and growing graphene on the deposited Ti layer by chemical vapor deposition.

Abstract: The present invention relates to a transfer-free method for producing a graphene thin film, which may form a high-quality graphene layer having excellent crystallinity on a substrate without a transfer process, and to a method of fabricating a device using the transfer-free method. More specifically, the present invention relates to a transfer-free method for producing a graphene thin film and a method for fabricating a device using the transfer-free method, the methods including the steps of: (A) forming a titanium buffer layer on a target substrate; and (B) growing a graphene thin film on the titanium buffer layer, wherein process are performed in an oxygen-free atmosphere throughout the steps (A) to (B).

Abstract: The present invention relates to an antimicrobial glass having both electromagnetic shielding and antimicrobial characteristics while maintaining the transparency of glass, and more particularly to an optically transmissive antimicrobial glass with an electromagnetic shielding effect that includes an AZO/Ag/AZO multilayer thin film deposited on a glass substrate.

Abstract: The present invention relates to a transfer-free method for forming a graphene layer, in which a high-quality graphene layer having excellent crystallinity can be easily formed over a large area at low temperature by a transfer-free process so that it can be applied directly to a base substrate, which is used in a transparent electrode, a semiconductor device or the like, without requiring a separate transfer process, and to an electrical device comprising a graphene layer formed by the method. More specifically, the transfer-free method for forming a graphene layer comprises the steps of: depositing a Ti layer having a thickness of 3-20 m on a base substrate by sputtering; and growing graphene on the deposited Ti layer by chemical vapor deposition.

Abstract: The present invention relates to an antimicrobial glass having both electromagnetic shielding and antimicrobial characteristics while maintaining the transparency of glass, and more particularly to an optically transmissive antimicrobial glass with an electromagnetic shielding effect that includes an AZO/Ag/AZO multilayer thin film deposited on a glass substrate.

Abstract: Disclosed herein is a method for manufacturing (In)—(Sb)—(Te) (IST) nanowires and a phase-change memory device comprising the nanowires. The method comprises providing a substrate and vapors of In, Sb and Te precursors in a chamber and allowing the vapors to react with each other on the substrate in the chamber at a temperature of 230-300° C. and a pressure of 7-15 Torr. With the method, IST nanowires can be fabricated cost-effectively.

Abstract: A method to deposit a thin film on a flexible polymer substrate at room temperature comprising heating source vapor, which is vaporized by an evaporator, in a shower head in a reaction chamber so that the source vapor is thermally decomposed to be converted into the nano-size single phase; and depositing the source vapor in the nano-size single phase on the flexible polymer substrate which is not separately heated.

Abstract: Disclosed herein is a method for manufacturing (In)—(Sb)—(Te) (IST) nanowires and a phase-change memory device comprising the nanowires. The method comprises providing a substrate and vapors of In, Sb and Te precursors in a chamber and allowing the vapors to react with each other on the substrate in the chamber at a temperature of 230-300° C. and a pressure of 7-15 Torr. With the method, IST nanowires can be fabricated cost-effectively.

Abstract: The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. The thin-film resistor of the invention has superior electrical characteristics, such as sheet resistance, and superior characteristics in change of attenuation and voltage standing wave ratio (VSWR) with respect to changes of frequency and L/W, and thus the thin-film resistor can be utilized in a high frequency domain of up to 6 GHz.

Abstract: A method for preparing a transparent conducting film coated with an AZO/Ag/AZO multilayer thin film with low resistivity and high light transmittance, and a transparent conducting film produced by the same method. The method for preparing a transparent conducting film coated with an AZO/Ag/AZO multilayer thin film, includes (a) forming a primary AZO thin film on a substrate using an AZO target doped with Al through a sputtering method; (b) depositing Ag on the primary AZO thin film using the sputtering method to form a deposited Ag layer; and (c) forming a secondary AZO thin film on the Ag thin film using the AZO target doped with Al through a sputtering method.

Abstract: A method of forming a chalcogenide film is provided which includes forming a germanium film on a substrate by exposing the substrate to a germanium source and a first antimony source, and growing a polynary film from the germanium film by exposing the germanium film to at least one of a tellurium source and a second antimony source.

Abstract: The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. The thin-film resistor of the invention has superior electrical characteristics, such as sheet resistance, and superior characteristics in change of attenuation and voltage standing wave ratio (VSWR) with respect to changes of frequency and L/W, and thus the thin-film resistor can be utilized in a high frequency domain of up to 6 GHz.

Abstract: A method to deposit a thin film on a flexible polymer substrate at room temperature comprising heating source vapor, which is vaporized by an evaporator, in a shower head in a reaction chamber so that the source vapor is thermally decomposed to be converted into the nano-size single phase; and depositing the source vapor in the nano-size single phase on the flexible polymer substrate which is not separately heated.

Abstract: A method for forming SBT ferroelectric thin film. Sr(C.sub.5 F.sub.6 HO.sub.2).sub.2, Bi(C.sub.6 H.sub.5).sub.3 and Ta(C.sub.2 H.sub.5 O).sub.5 are used as the precursors of Sr, Bi and Ta and bubbled at a temperature of 110-130.degree. C., 140-160.degree. C., and 120-140.degree. C., respectively. The deposition of the precursors on a substrate is carried out at 500-550.degree. C. in plasma by using an RF power of 100-150 W. Having a residual polarity (Pr) of 15 .mu.C/cm.sup.2 or higher and a coercive electric field (Ec) of 50 kV/cm or less and, the SBT ferroelectric thin film does not show a fatigue phenomenon until 1.times.10.sup.11 cycles as measured under 6V bipolar square pulse in the structure comprising Pt upper and lower electrodes and thus, can be applied for non-volatile memory devices.