Patents by Inventor Soonil Hong

Soonil Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective deposition of a barrier layer on a metal film
    Patent number: 6809026
    Abstract: A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: October 26, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Hyungsuk Alexander Yoon, Michael X. Yang, Hui Zhang, Soonil Hong, Ming Xi
  • Selective deposition of abarrier layer on a metal film
    Publication number: 20030181035
    Abstract: A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.
    Type: Application
    Filed: December 18, 2002
    Publication date: September 25, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Hyungsuk Alexander Yoon, Michael X. Yang, Hui Zhang, Soonil Hong, Ming Xi
  • Deposition of tungsten films for dynamic random access memory (DRAM) applications
    Publication number: 20030157760
    Abstract: A method of tungsten deposition for dynamic random access memory (DRAM) applications is described. The DRAM devices typically include two electrodes separated by a dielectric material. At least one of the two electrodes comprises a tungsten-based material. The tungsten-based material may be formed using a cyclical deposition technique. Using the cyclical deposition technique, the tungsten-based material is formed by alternately adsorbing a tungsten-containing precursor and a reducing gas on a structure.
    Type: Application
    Filed: February 20, 2002
    Publication date: August 21, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Ming Xi, Soonil Hong, Hyungsuk A. Yoon, Michael X. Yang, Hui Zhang
  • Deposition of tungsten silicide films
    Publication number: 20020168840
    Abstract: A method of forming tungsten suicide (WSix) films is provided. The tungsten suicide (WSix) films are formed by reacting a tungsten source with a silicon source at a temperature greater than about 600° C. The as-deposited tungsten suicide (WSix) layer has a resistivity less than about 60 &mgr;&OHgr;-cm.
    Type: Application
    Filed: May 11, 2001
    Publication date: November 14, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Soonil Hong, Hyungsuk Alexander Yoon, Chiliang Chen, Kimberly Branshaw
  • Deposition of tungsten silicide films
    Publication number: 20020162500
    Abstract: A method of forming tungsten silicide (WSix) films is provided. The tungsten silicide (WSix) film is formed by reacting a tungsten source with a silicon source. After the tungsten silicide (WSix) film is formed, it is spike annealed to reduce the resistivity of the as-deposited film. The spike annealed tungsten silicide (WSix) layer has a resistivity less than about 60 &mgr;&OHgr;-cm.
    Type: Application
    Filed: May 2, 2001
    Publication date: November 7, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Soonil Hong, Hyungsuk Alexander Yoon, Ajay Singhal
  • Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
    Patent number: 6190233
    Abstract: A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.
    Type: Grant
    Filed: February 19, 1998
    Date of Patent: February 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Soonil Hong, Choon Kun Ryu, Michael P. Nault, Kaushal K. Singh, Anthony Lam, Virendra V. S. Rana, Andrew Conners
  • Method for submicron gap filling on a semiconductor substrate
    Patent number: 6191026
    Abstract: A semiconductor manufacturing process with improved gap fill capabilities is provided by a three step process of FSG deposition/etchback/FSG deposition. A first layer of FSG is partially deposited over a metal layer. An argon sputter etchback step is then carried out to etch out excess deposition material. Finally, a second layer of FSG is deposited to complete the gap fill process.
    Type: Grant
    Filed: January 9, 1996
    Date of Patent: February 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Virendra V. S. Rana, Andrew Conners, Anand Gupta, Xin Guo, Soonil Hong
  • Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
    Patent number: 5990000
    Abstract: A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.
    Type: Grant
    Filed: February 20, 1997
    Date of Patent: November 23, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Soonil Hong, Choon Kun Ryu, Michael P. Nault, Kaushal K. Singh, Anthony Lam, Virendra V. S. Rana, Andrew Conners