Patents by Inventor Soon-ju Kwon

Soon-ju Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween
    Patent number: 7936030
    Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: May 3, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-wan Kim, Wan-jun Park, Sang-jin Park, In-jun Hwang, Soon-ju Kwon, Young-keun Kim, Richard J. Gambino
  • Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween
    Publication number: 20100329001
    Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
    Type: Application
    Filed: August 30, 2010
    Publication date: December 30, 2010
    Inventors: Tae-wan Kim, Wan-jun Park, Sang-jin Park, In-jun Hwang, Soon-ju Kwon, Young-keun Kim, Richard J. Gambino
  • Method of manufacturing a multi-purpose magnetic film structure
    Patent number: 7811833
    Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
    Type: Grant
    Filed: September 14, 2007
    Date of Patent: October 12, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-wan Kim, Wan-jun Park, Sang-jin Park, In-jun Hwang, Soon-ju Kwon, Young-keun Kim, Richard J. Gambino
  • Magnetic resistance device and method of manufacturing the same
    Patent number: 7554774
    Abstract: In a magnetic resistance device, and a method of manufacturing the same, the magnetic resistance device includes a pinning layer, a pinned layer, a nonmagnetic layer, and a free layer stacked on one another, at least one of the pinned layer and the free layer being formed of an intermetallic compound.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: June 30, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-wan Kim, Kee-won Kim, Soon-ju Kwon, Sang-jin Park
  • Method of manufacturing a multi-purpose magnetic film structure
    Publication number: 20080009080
    Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
    Type: Application
    Filed: September 14, 2007
    Publication date: January 10, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-wan Kim, Wan-jun Park, Sang-jin Park, In-jun Hwang, Soon-ju Kwon, Young-keun Kim, Richard Gambino
  • Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device
    Patent number: 7272033
    Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: September 18, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-wan Kim, Wan-jun Park, Sang-jin Park, In-jun Hwang, Soon-ju Kwon, Young-keun Kim, Richard J. Gambino
  • Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device
    Publication number: 20060050445
    Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
    Type: Application
    Filed: August 1, 2005
    Publication date: March 9, 2006
    Inventors: Tae-wan Kim, Wan-jun Park, Sang-jin Park, In-jun Hwang, Soon-ju Kwon, Young-keun Kim, Richard Gambino
  • Magnetic resistance device and method of manufacturing the same
    Publication number: 20050168882
    Abstract: In a magnetic resistance device, and a method of manufacturing the same, the magnetic resistance device includes a pinning layer, a pinned layer, a nonmagnetic layer, and a free layer stacked on one another, at least one of the pinned layer and the free layer being formed of an intermetallic compound.
    Type: Application
    Filed: January 31, 2005
    Publication date: August 4, 2005
    Inventors: Tae-wan Kim, Kee-won Kim, Soon-ju Kwon, Sang-jin Park