Abstract: Structures and methods are provided for integrating a resistance random access memory (ReRAM) in a back-end-on-the-line (BEOL) fat wire level. In one embodiment, a ReRAM device area contact structure is provided in the BEOL fat wire level that has at least a lower via portion that contacts a surface of a top electrode of a ReRAM device area ReRAM-containing stack. In other embodiments, a tall ReRAM device area bottom electrode is provided in the BEOL fat wire level and embedded in a dielectric material stack that includes a dielectric capping layer and an interlayer dielectric material layer.

Abstract: A battery module for improving heat balance of a cell assembly provided in the battery module includes a cell assembly having at least three battery cells stacked along a stacking axis such that at least one battery cell located at an interior position within the cell assembly along the stacking axis has a greater thickness along the stacking axis than a battery cell located at an outer side of the cell assembly. A module housing includes at least one sidewall and is configured to accommodate the cell assembly in an inner space defined by the sidewall.

Abstract: Provided is an integrated circuit implemented by a plurality of vertical field effect transistors (VFETs) in one or more semiconductor cells, wherein a distance between a pair of second vertical channel structures of a first cell and an adjacent pair of first vertical channel structures in a second cell, all facing a cell boundary between the first and second cells, is the same as a distance between the pair of the first vertical channel structures and a pair of second vertical channel structures arranged next to the pair of the first vertical channel structures in the first cell.

Abstract: Provided is an integrated circuit implemented by a plurality of vertical field effect transistors (VFETs) in one or more semiconductor cells, wherein a distance between a pair of second vertical channel structures of a first cell and an adjacent pair of first vertical channel structures in a second cell, all facing a cell boundary between the first and second cells, is the same as a distance between the pair of the first vertical channel structures and a pair of second vertical channel structures arranged next to the pair of the first vertical channel structures in the first cell.

Abstract: An Electronic Computer Aided Design System provides for concurrent operation of a plurality of design tools which share a common design dataset. Changes made by one program to the design dataset are immediately updated and are automatically reflected in the displayed outputs of the other design tools. A tool manager program allows rule-based automation of the entire system.