Abstract: A method of forming a semiconductor package includes providing a baseplate, mounting a semiconductor die on the baseplate with a main surface of the semiconductor die facing away from the baseplate, forming vertical interconnect elements on the main surface of the semiconductor die, forming an encapsulant on the baseplate that encapsulates the semiconductor die, exposing the vertical interconnect elements at an upper surface of the encapsulant, forming a first level metal pad on the upper surface of the encapsulant that contacts the exposed vertical interconnect elements, and forming structured metal regions on the upper surface of the encapsulant, wherein forming the structured metal regions includes structuring the first level metal pad.

Abstract: A package is disclosed. In one example, the package includes an electronic component and an encapsulant encapsulating at least part of the electronic component. A first electrically conductive structure is arranged on one side of the electronic component, a second electrically conductive structure arranged on an opposing other side of the electronic component and being electrically coupled with the electronic component, and at least one sidewall recess at the encapsulant. The first electrically conductive structure and the second electrically conductive structure are configured to be at different electric potentials during operation of the package. The first electrically conductive structure and the second electrically conductive structure are exposed at opposing main surfaces of the encapsulant.

Abstract: A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

Abstract: A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads embedded in the mold compound are electrically connected to the semiconductor die. The metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound. The metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound. The faces of the metal pads uncovered by the mold compound are plated. The side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound. A corresponding manufacturing method is also described.

Abstract: A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

Abstract: A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads embedded in the mold compound are electrically connected to the semiconductor die. The metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound. The metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound. The faces of the metal pads uncovered by the mold compound are plated. The side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound. A corresponding manufacturing method is also described.

Abstract: A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.

Abstract: A semiconductor package and method for fabricating a semiconductor package is disclosed. In one aspect, the method includes providing a substrate, at least partially encapsulating the substrate in an encapsulation body, and depositing by electroplating a first Ni layer on a first surface of the substrate. A second Ni layer by electroless Ni plating is deposited on the first Ni layer.

Abstract: A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads embedded in the mold compound are electrically connected to the semiconductor die. The metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound. The metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound. The faces of the metal pads uncovered by the mold compound are plated. The side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound. A corresponding manufacturing method is also described.

Abstract: An electronic device comprising a carrier having a mounting surface, at least one electronic chip mounted on the mounting surface, an encapsulant at least partially encapsulating the carrier and the at least one electronic chip, and a plurality of capsules in the encapsulant, wherein the capsules comprise a core comprising an additive and comprise a shell, in particular a crackable shell, enclosing the core.

Abstract: A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads are also embedded in the mold compound and electrically connected to the semiconductor die. The metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound. The metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound. The faces of the metal pads uncovered by the mold compound are plated. The side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound. A corresponding manufacturing method is also described.

Abstract: A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads are also embedded in the mold compound and electrically connected to the semiconductor die. The metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound. The metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound. The faces of the metal pads uncovered by the mold compound are plated. The side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound. A corresponding manufacturing method is also described.

Abstract: A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.

Abstract: A primer composition is provided. The primer composition includes at least one bi- or multi-functional benzoxazine compound; and at least one compound including a functional group having affinity for a metallic surface, and a cross-linkable group. A method of forming a primer layer on a semiconductor device, and a method of encapsulating a semiconductor device are also provided.

Abstract: A semiconductor package includes a plurality of bond pads having a first side and a second side opposing the first side, a coating covering the first side of the bond pads, semiconductor dies and electrical conductors attached to the second side of the bond pads, and a molding compound encasing the semiconductor dies and the electrical conductors at the second side of the bonds pads. The molding compound has a first side through which the bond pads protrude and a second side opposing the first side, the first side of the molding compound having a planar surface between adjacent ones of the bond pads. The package further includes a material plated on exposed sidewalls of the bonds pads uncovered by the molding compound and which is detectable by optical inspection. A corresponding method of manufacture is also provided.

Abstract: An electronic device comprising a carrier having a mounting surface, at least one electronic chip mounted on the mounting surface, an encapsulant at least partially encapsulating the carrier and the at least one electronic chip, and a plurality of capsules in the encapsulant, wherein the capsules comprise a core comprising an additive and comprise a shell, in particular a crackable shell, enclosing the core.

Abstract: A primer composition is provided. The primer composition includes at least one bi- or multi-functional benzoxazine compound; and at least one compound including a functional group having affinity for a metallic surface, and a cross-linkable group. A method of forming a primer layer on a semiconductor device, and a method of encapsulating a semiconductor device are also provided.

Abstract: A semiconductor package includes a plurality of bond pads having a first side and a second side opposing the first side, a coating covering the first side of the bond pads, semiconductor dies and electrical conductors attached to the second side of the bond pads, and a molding compound encasing the semiconductor dies and the electrical conductors at the second side of the bonds pads. The molding compound has a first side through which the bond pads protrude and a second side opposing the first side, the first side of the molding compound having a planar surface between adjacent ones of the bond pads. The package further includes a material plated on exposed sidewalls of the bonds pads uncovered by the molding compound and which is detectable by optical inspection. A corresponding method of manufacture is also provided.

Abstract: Embodiments provide a method of forming a chip package. The method may include attaching at least one chip on a carrier, the chip including a plurality of chip pads on a surface of the chip opposite to the carrier; depositing a first adhesion layer on the carrier and on the chip pads of the chip, the first adhesion layer including tin or indium; depositing a second adhesion layer on the first adhesion layer, the second adhesion layer including a silane organic material; and depositing a lamination layer or an encapsulation layer on the second adhesion layer and the chip.

Abstract: Embodiments provide a method of forming a chip package. The method may include attaching at least one chip on a carrier, the chip including a plurality of chip pads on a surface of the chip opposite to the carrier; depositing a first adhesion layer on the carrier and on the chip pads of the chip, the first adhesion layer including tin or indium; depositing a second adhesion layer on the first adhesion layer, the second adhesion layer including a silane organic material; and depositing a lamination layer or an encapsulation layer on the second adhesion layer and the chip.