Abstract: The present invention provides a method of manufacturing a graphene nanosphere through a single process that is simplified in order to enable mass production. The method includes step 1 of manufacturing a silicon carbide nanosphere coated with graphene through chemical vapor deposition (CVD) using a gas containing a silicon source and a carbon source and step 2 of discontinuing the chemical vapor deposition (CVD) and then performing cooling.

Abstract: The present invention provides a method of manufacturing a graphene nanosphere through a single process that is simplified in order to enable mass production. The method includes step 1 of manufacturing a silicon carbide nanosphere coated with graphene through chemical vapor deposition (CVD) using a gas containing a silicon source and a carbon source and step 2 of discontinuing the chemical vapor deposition (CVD) and then performing cooling.

Abstract: The present invention relates to polycrystalline gallium-doped zinc oxide of which the power factor is improved due to increased gallium doping of same. Despite having a high carrier concentration, the Seebeck coefficient of Zn0.985Ga0.015O is higher than that of Zn0.990Ga0.010O, and this arises because of the effect of the density-of-states (DOS) effective mass. A steady increase in compression stress following gallium substitution occurs in the base portion of the conduction band DOS. The solubility limit of gallium in the zinc oxide matrix is increased because a low firing temperature accelerates chemical compression. Single phase n-type Zn0.985Ga0.015O exhibits a power factor of 12.5 ?Wcm?1K?2.

Abstract: A low temperature sinterable dielectric ceramic composition, as well as a multilayer ceramic chip capacitor and a ceramic electronic device. The dielectric ceramic composition comprises a major composition represented by the general formula: x{?BaO, (1??)SrO}-y{SiO2}-z{(1??)ZrO2, ? Al2O3} (wherein x, y and z are weight percentages; x+y+z=100, 55?x?75, 10?y?35, and 5?z?30, ? and ? are moles; 0.4???0.8, and 0.01???0.07) and 2 to 10 parts by weight of a Zn—B-silicate glass composition, per 100 parts by weight of the major composition.

Abstract: A low temperature sinterable dielectric ceramic composition, as well as a multilayer ceramic chip capacitor and a ceramic electronic device. The dielectric ceramic composition comprises a major composition represented by the general formula: x{&agr; BaO, (1−&agr;)SrO}-y{SiO2}-z{(1−&bgr;)ZrO2, &bgr; Al2O3} (wherein x, y and z are weight percentages; x+y+z=100, 55≦x≦75, 10≦y≦35, and 5≦z≦30, &agr; and &bgr; are moles; 0.4≦&agr;≦0.8, and 0.01≦&bgr;≦0.07) and 2 to 10 parts by weight of a Zn—B-silicate glass composition, per 100 parts by weight of the major composition.