Abstract: A semiconductor package includes a plurality of first leads, each with a top outer portion removed from the lead and an outer end, and a plurality of second leads, each with a bottom outer portion removed from the lead and an outer end. The first and second leads alternate with each other along an edge of the package. Also, the outer ends of the first leads form a first row along the edge of the package and the outer ends of the second leads form a second row along the edge of the package. In one embodiment, the first and second rows are parallel to each other and an encapsulant covers at least a portion of the first and second leads.

Abstract: In one embodiment, an optical input device for providing input to an electronic device is disclosed. The optical input device includes a panel operable to transmit light from a first side to a second side, and a matrix of photodetectors. The first side of the panel is disposed for interaction with a pointer. The matrix of photodetectors is disposed on the second side of the panel, and detects the light transmitted from the first side to the second side of the panel. The photodetectors have overlapping fields of view with respect to the first side of the panel, and each of the photodetectors generates a value corresponding to an intensity of detected light.

Abstract: A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises interconnecting an electrical bridge circuit across the semiconductor device, the semiconductor device being connected as one of at least four circuit elements of the bridge circuit; inducing the changes in the semiconductor; and monitoring a balance condition of the bridge circuit.

Abstract: In a method for operating a plurality of optical sensors, each of the optical sensors is sequentially coupled to a shared input of a receiver. When electrically coupling a given one of the optical sensors to the shared input, at least one other of the optical sensors is shunted to ground. Apparatus that may be used to implement the method is provided with a plurality of optical sensors, and a receiver having a shared input. Each of a first plurality of switches couples one of the optical sensors to the shared input of the receiver. Each of a second plurality of switches shunts one of the optical sensors to ground.

Abstract: A chromeless phase shift mask and Method for making and using. The A chromeless phase shift mask is used to pattern contact holes. The chromeless phase shift mask preferably comprises: a first phase shift region and a second phase shfit region; the first region is comprised of a unit cell which is comprised of a rectangular center section and at least three rectangular sections (legs) outwards extending from the rectangular center section. The second region is adjacent to said first region. The interference between the first and second phase shift regions creates a contact hole pattern.

Abstract: A method for forming a contact hole unit cell is provided. A light transparent contact hole region of a first phase is positioned at a first plane. A light transparent phase-shifting region of a second phase is positioned at the first plane, the second phase being substantially out of phase with the first phase. The phase-shifting region substantially surrounds the contact hole region. A light transparent border region is positioned at the first plane outside and substantially surrounding the phase-shifting region. The border region has a phase substantially the same as that of the contact hole region. The contact hole region, the phase-shifting region, and the border region are positioned to cause light from the first plane to be reinforcing in a target contact hole configuration on a second plane and to be substantially neutralizing outside the target contact hole configuration on the second plane.

Abstract: A method and structure for removing side lobes is provided by positioning first and second radiation transparent regions of respective first and second phases at a first plane with the first and second phases being substantially out of phase. Further, positioning the first and the second region to cause radiation at a second plane to be neutralized in a first region, not to be neutralized in a second region, and to have a side lobe in a third region. Further, positioning a non-transparent region at the first plane to assure radiation at the second plane to be neutralized in the first region and positioning a third radiation transparent region of the first or second phase at the first plane to neutralize the side lobes in the third region at the second plane.

Abstract: A color filter and method for fabricating the same are disclosed. The color filter has a primary filter layer and a first trim filter. The primary filter layer is partially transparent to light and has a transmission function that also varies as a function of the spatial location on that filter layer. The primary filter transmits light in a first band about a first characteristic wavelength at a first location in the primary filter layer and transmits light in a second band about a second characteristic wavelength at a second location in the primary filter layer. The first trim filter includes a layer of material that overlies the first and second locations and that preferentially attenuates light at a first trim wavelength between the first and second characteristic wavelengths. The transmission function of the first trim filter is substantially the same at the first and second locations.

Abstract: A reticle structure and a method of forming a photoresist profile on a substrate using the reticle having a multi-level profile. The reticle comprises (1) a transparent substrate, (2) a partially transmitting 180 degree phase shift film overlying predetermined areas of the transparent substrate to transmit approximately 20 to 70% of incident light, and (3) an opaque film overlying the predetermined areas of the partially transmitting 180 degree phase shift film. The method comprises the following steps: a) depositing a photoresist film over the substrate; b) directing light to the photoresist film through the reticle, and c) developing the photoresist film to form an opening in the resist layer where light only passed thru the substrate, and to remove intermediate thickness of the photoresist film, in the areas where the light passed through the partially transmitting 180 degree phase shift film. In an aspect, the photoresist film is comprised of a lower photoresist layer and an upper photoresist layer.

Abstract: A structure, a method of fabricating and a method of using a phase shift mask (PSM) having a first phase shifted section, a half tone section, and a second phase shifted section. The first phase shift section and the half tone section are shifted 180 degrees with the second phase shift region. Embodiments provide for (1) a half tone, single trench alternating phase shift mask and (2) a half tone, dual trench alternating phase shift mask. The half tone region provides advantages over conventional alternating phase shift masks.